Separated Redox Sites Strategies for Engineering High-Efficient Photocatalysts: Pagoda-Like In2O3/CuO Heteroepitaxial Structure Coated by N Doped C Layer

In order to prepare efficient photocatalysts, it is necessary to consider not only the generation, separation and migration of photo-generated carriers, but also the effective activation of reactants and the...

Synthesis, Characterization, and Magnetoresistive Properties of the Epitaxial Pd0.96Fe0.04/VN/Pd0.92Fe0.08 Superconducting Spin-Valve Heterostructure

A thin-film superconductor(S)/ferromagnet(F) F1/S/F2-type Pd0.96Fe0.04(20 nm)/VN(30 nm)/Pd0.92Fe0.08(12 nm) heteroepitaxial structure was synthesized on (001)-oriented single-crystal MgO substrate utilizing a combination of the reactive magnetron sputtering and the molecular-beam epitaxy techniques in ultrahigh vacuum conditions. The reference VN film, Pd0.96Fe0.04/VN, and VN/Pd0.92Fe0.08 bilayers were grown in one run with the target sample. In-situ low-energy electron diffraction and ex-situ X-ray diffraction investigations approved that all the Pd1−xFex and VN layers in the series grew epitaxial in a cube-on-cube mode. Electric resistance measurements demonstrated sharp transitions to the superconducting state with the critical temperature reducing gradually from 7.7 to 5.4 K in the sequence of the VN film, Pd0.96Fe0.04/VN, VN/Pd0.92Fe0.08, and Pd0.96Fe0.04/VN/Pd0.92Fe0.08 heterostructures due to the superconductor/ferromagnet proximity effect. Transition width increased in the same sequence from 21 to 40 mK. Magnetoresistance studies of the trilayer Pd0.96Fe0.04/VN/Pd0.92Fe0.08 sample revealed a superconducting spin-valve effect upon switching between the parallel and antiparallel magnetic configurations, and anomalies associated with the magnetic moment reversals of the ferromagnetic Pd0.92Fe0.08 and Pd0.96Fe0.04 alloy layers. The moderate critical temperature suppression and manifestations of superconducting spin-valve properties make this kind of material promising for superconducting spintronics applications.

High-κ dielectric ε-Ga2O3 stabilized in a transparent heteroepitaxial structure grown by mist CVD at atmospheric pressure

The dielectric constant of metastable ε-Ga2O3 was evaluated for the first time by using a transparent heteroepitaxial structure of ε-Ga2O3/indium tin oxide/yttria-stabilized zirconia.

Легкий гибкий солнечный элемент на основе гетероэпитаксиальной структуры InGaP/GaAs

The article considers the problems of formation the light flexible III–V compounds-based solar cell. Approaches of the problems solves were proposed. Was fabricated the light flexible solar cell based on the InGaP/GaAs heteroepitaxial structure. The solar cell weight and size characteristics have been determinate. The solar cell specific weight was 0.51 kg / m2.The bending tests showed that the minimum bending radius of the solar cell is 36 mm. The solar cell current-voltage characteristics were measured for AM0 and AM1.5D spectrum at 28.6°C и 25°C respectively. The efficiency was 23.1% for AM0 and 28.32% for AM1.5D.

Growth Acceleration in FLASiC Assisted Short Time Liquid Phase Epitaxy by Melt Modification

Flash lamp annealing of multilayer stack of the type SiC/Silicon overlayer(SOL)/SiC reduces the defect densities in the 3C-SiC/Si heteroepitaxial structure. Ge and C additions to the SOL lead to a substantial increase of the mass transfer from the upper layer to the lower SiC layer. If the Ge content of the SOL and the flash lamp annealing conditions are properly chosen a homogeneous layer with a 3C-SiC thickness between 150 and 200 nm can be achieved corresponding to a growth rate between 7.5 and 10.0 +m/s. The thickening of the lower layer depends on the SOL composition. Ge and/or C incorporation into the SOL and therefore into the Si melt enhances the mass transport from the upper SiC layer to the lower one.