High-κ dielectric ε-Ga2O3 stabilized in a transparent heteroepitaxial structure grown by mist CVD at atmospheric pressure
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The dielectric constant of metastable ε-Ga2O3 was evaluated for the first time by using a transparent heteroepitaxial structure of ε-Ga2O3/indium tin oxide/yttria-stabilized zirconia.
2003 ◽
Vol 13
(2)
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pp. 2567-2570
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1989 ◽
Vol 7
(3)
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pp. 827-832
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2020 ◽
Vol 199
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pp. 108363
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2017 ◽
Vol 4
(1)
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pp. 016402
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