High-κ dielectric ε-Ga2O3 stabilized in a transparent heteroepitaxial structure grown by mist CVD at atmospheric pressure

CrystEngComm ◽  
2020 ◽  
Vol 22 (2) ◽  
pp. 381-385 ◽  
Author(s):  
Subaru Yusa ◽  
Daichi Oka ◽  
Tomoteru Fukumura

The dielectric constant of metastable ε-Ga2O3 was evaluated for the first time by using a transparent heteroepitaxial structure of ε-Ga2O3/indium tin oxide/yttria-stabilized zirconia.

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 275
Author(s):  
Pengcheng Wang ◽  
Rodica Elena Ionescu

Round, small-sized coverslips were coated for the first time with thin layers of indium tin oxide (ITO, 10–40 nm)/gold (Au, 2–8 nm) and annealed at 550 °C for several hours. The resulting nanostructures on miniaturized substrates were further optimized for the localized surface plasmon resonance (LSPR) chemosensing of a model molecule—1,2-bis-(4-ppyridyl)-ethene (BPE)—with a detection limit of 10−12 M BPE in an aqueous solution. All the fabrication steps of plasmonic-annealed platforms were characterized using scanning electron microscopy (SEM) and atomic force microscopy (AFM).


2020 ◽  
Vol 199 ◽  
pp. 108363 ◽  
Author(s):  
Cristian Mendes-Felipe ◽  
J.C. Barbosa ◽  
Sérgio Gonçalves ◽  
Nelson Pereira ◽  
C.M. Costa ◽  
...  

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