Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination

2019 ◽  
Vol 115 (14) ◽  
pp. 142101 ◽  
Author(s):  
Takuya Maeda ◽  
Tetsuo Narita ◽  
Hiroyuki Ueda ◽  
Masakazu Kanechika ◽  
Tsutomu Uesugi ◽  
...  
Keyword(s):  
Avalanche Multiplication ◽  
Franz Keldysh Effect

scholarly journals Phase and intensity dependence of the dynamical Franz-Keldysh effect

2003 ◽  
Vol 67 (16) ◽  
Author(s):  
C. J. Dent ◽  
B. N. Murdin ◽  
I. Galbraith
Keyword(s):  
Intensity Dependence ◽  
Franz Keldysh Effect

scholarly journals Franz-Keldysh effect in semiconductor T-wire in applied magnetic field

2004 ◽  
Vol 34 (2b) ◽  
pp. 663-665 ◽  
Author(s):  
Justino R. Madureira ◽  
Marcelo Z. Maialle ◽  
Marcos H. Degani
Keyword(s):  
Magnetic Field ◽  
Applied Magnetic Field ◽  
Franz Keldysh Effect

Avalanche multiplication in InAs photodiodes

1965 ◽  
Vol 53 (2) ◽  
pp. 180-180 ◽  
Author(s):  
G. Lucovsky ◽  
R.B. Emmons
Keyword(s):  
Avalanche Multiplication

Linear bounded potential model for semiconductor band bending

2022 ◽  
Author(s):  
Facundo Villavicencio ◽  
Jorge Mario Ferreyra ◽  
German Bridoux ◽  
Manuel Villafuerte
Keyword(s):  
Potential Model ◽  
Simple Expression ◽  
Linear Potential ◽  
Charge Balance ◽  
Band Bending ◽  
Mass Approximation ◽  
Hole Confinement ◽  
Dimensional Electron Gas ◽  
Analytical Expressions ◽  
Franz Keldysh Effect

Abstract We propose a simple but unexplored model for the semiconductor band bending with the aim to obtain a relatively simple expression to calculate the energy spectrum for the confined levels and the analytical expressions for wave-functions. This model consists of a linear potential but it is bounded or trimmed in energy unlike the well known wedge potential model. We present exact solutions for this potential in the frame of the effective mass approximation and they are valid for electron or hole confinement potential. This model provides a more adequate physical scenario than the wedge potential since it takes into account the charge balance involved in the band bending potential. These results allow to treat confined potential problems as in the case of a two-dimensional electron gas (2DEG) in a simplified way. We discuss the application of this approximation to the recombination time of electrons an holes and for the Franz-Keldysh effect.

A Compact Formulation for Avalanche Multiplication in SiGe HBTs at High Injection Levels

2019 ◽  
Vol 66 (1) ◽  
pp. 264-270 ◽  
Author(s):  
Mathieu Jaoul ◽  
Cristell Maneux ◽  
Didier Celi ◽  
Michael Schroter ◽  
Thomas Zimmer
Keyword(s):  
Avalanche Multiplication ◽  
High Injection ◽  
Compact Formulation
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