Charge Carrier Transport in Van Der Waals Semiconductor InSe Intercalated with RbNO3 Probed by Direct Current Methods

Layered van der Waals (vdW) semiconductors show great promise to overcome limitations imposed by traditional semiconductor materials. The synergistic combination of vdW semiconductors with other functional materials can offer novel working principles and device concepts for future nano- and optoelectronics. Herein, we investigate the influence of the intercalation of semiconducting n-type InSe vdW crystals with ferroelectric rubidium nitrate (RbNO3) on the transport of charge carriers along and across the layers. The apparent maxima in the temperature dependences of the Hall coefficient are explained in the framework of a model that predicts, along with three-dimensional carriers, the existence of two-dimensional ones contributing only to the conductivity along the layers. The revealed increase of the conductivity anisotropy and its activation variation with temperature, which is mainly due to a decrease of the conductivity across the layers, confirm a two-dimensionalization of electron gas in n-InSe after insertion of the ferroelectric. From the numerical analysis, we determined the densities of carriers of both types, concentrations of donors and acceptors, as well as the value of the interlayer barrier.

Applications of a simultaneous differential scanning calorimetry–thermomicroscopy system

A simultaneous DSC–thermomicroscopy system (DSC450 Linkam Scientific) was applied to the study of phase transitions in rubidium nitrate and silver iodide, the oxidation of polyethylene, the thermal degradation of polylactic acid and magnesium nitrate hexahydrate, and the reversible transitions in thermochromic inks. The results demonstrated the benefits of obtaining simultaneous optical data, both images and light intensity measurements, with DSC, particularly in the interpretation of complex processes and the detection of events with small changes in enthalpy.

Technology to Produce High-Purity Anhydrous Rubidium Perrhenate on an Industrial Scale

Technology used to produce high purity anhydrous rubidium perrhenate on an industrial scale from high purity perrhenic acid and rubidium nitrate by the ion-exchange method is described in this paper. This material is dedicated to catalyst preparation, therefore, strict purity requirements have to be fulfilled. These are satisfied by combining rubidium ion sorption on an ion exchange column and the subsequent elution of the high purity perrhenic acid solution, followed by crystallization, evaporation, purification, and drying. In the current study, rubidium and rhenium contents were found to be 22.5 wt.% and 55.4 wt.%, respectively, while contaminations were as follows: <2 ppm As, <2 ppm Bi, <5 ppm Ca, <5 ppm Cu, <3 ppm Fe, <10 ppm K, <3 ppm Mg, <5 ppm Mo, <2 ppm Na, <5 ppm Pb, and <3 ppm Zn.