Picosecond photoelectric characteristic in La0.7Sr0.3MnO3∕Si p-n junctions

2005 ◽  
Vol 86 (24) ◽  
pp. 241915 ◽  
Author(s):  
Hui-Bin Lu ◽  
Kui-Juan Jin ◽  
Yan-Hong Huang ◽  
Meng He ◽  
Kun Zhao ◽  
...  
Keyword(s):  
Photoelectric Characteristic

scholarly journals Scalable Production of Graphene/Semiconducting Single-Wall Carbon Nanotube Film Schottky Broadband Photodiode Array with Enhanced Photoresponse

2018 ◽  
Vol 8 (12) ◽  
pp. 2369 ◽  
Author(s):  
Jun Cao ◽  
Yuexin Zou ◽  
Xue Gong ◽  
Ruijie Qian ◽  
Zhenghua An
Keyword(s):  
Carbon Nanotube ◽  
Large Scale ◽  
Near Infrared ◽  
Fast Response ◽  
Large Area ◽  
Photoelectric Characteristic ◽  
Single Wall Carbon Nanotube ◽  
Single Wall Carbon ◽  
Swcnt Film ◽  
Photodiode Array

A general approach was developed to fabricate graphene/semiconducting single-wall carbon nanotube (graphene/s-SWCNT) film Schottky junctions on a large scale. The graphene/s-SWCNT film photodiodes array based on the vertically stacked Schottky junction were fabricated. The all-carbon cross-shaped structure consisted of multielement graphene/s-SWCNT Schottky photodiodes and presented a rich collection of electronics and photonics. The as-fabricated carbon-based photodiode presented an ultra-broadband photodetection characteristic with a high responsivity of 1.75 A/W at near-infrared wavelengths and a fast response rise time of 15 μs. The as-fabricated device clearly showed gate-tunable and wavelength-dependent photoelectric characteristic. Moreover, the corresponding photocurrent excitation spectrum was also demonstrated. In particular, the Si compatible and high throughput fabrication process for the devices made it conducive for large-area multielement optoelectronics devices.

Pico-second photoelectric characteristic in manganite oxide La 0.67 Ca 0.33 MnO 3 films

2005 ◽  
Vol 14 (2) ◽  
pp. 420-421 ◽  
Author(s):  
Zhao Kun ◽  
Huang Yan-Hong ◽  
Lü Hui-Bin ◽  
He Meng ◽  
Jin Kui-Juan ◽  
...  
Keyword(s):  
Photoelectric Characteristic ◽  
Manganite Oxide

Photoelectric Characteristic Evaluation of Different Structured UTBB MOSFETs

2020 ◽  
Vol 67 (5) ◽  
pp. 1919-1923
Author(s):  
Liqiao Liu ◽  
Wangyong Chen ◽  
Xiaoyan Liu ◽  
Gang Du
Keyword(s):  
Photoelectric Characteristic

Test system for photoelectric characteristic parameters of thin film and module solar cells

2011 ◽  
Vol 19 (3) ◽  
pp. 628-634
Author(s):  
王志明 WANG Zhi-ming ◽  
龚振邦 GONG Zhen-bang ◽  
魏光普 WEI Guang-pu
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Test System ◽  
Characteristic Parameters ◽  
Photoelectric Characteristic

Structural and Behavioural Analysis of As2Se3, TeO2, SiC, SiO2 and Si3N4 for Photonic Application

2020 ◽  
Vol 978 ◽  
pp. 360-368
Author(s):  
Shahiruddin ◽  
M.Ashique Hassan ◽  
Anand Kumar ◽  
Dharmendra K. Singh
Keyword(s):  
Photonic Crystal ◽  
Structural Parameters ◽  
Nonlinear Coefficient ◽  
Hexagonal Structure ◽  
Confinement Loss ◽  
Structural Behaviour ◽  
Photoelectric Characteristic ◽  
Photonic Crystal Fibre ◽  
Crystal Fiber ◽  
Arsenic Selenide

The materials significantly influence the structural, optical and photoelectrical characteristic. Materials such as Arsenic selenide, Tellurite Glass, Silicon carbide, Silicon dioxide and Silicon nitride are investigated through finite element method. The models are established to analyse the structural behaviour of polarization preserving fibre of proposed materials. Photoelectric characteristic determines guided properties of photon particles. Refractive index of the materials influences the properties of photonic crystal fibre. A Polarization Splitter based hexagonal structure is proposed, where inner ring of cladding is in elliptical shape air holes and outer rings are in circular air holes. It provides highly negative dispersion, low confinement loss and high nonlinear coefficient between 1µm to 2µm wide wavelength ranges. The dispersion result shows -2000 db/km-nm at 1.55µm wavelength. Polarization beam splitters photonic crystal fiber characteristics of proposed materials are analysed with same structural parameters.

scholarly journals Influence of Different Surface Passivation on Photoelectric Properties PbS QDs

2021 ◽  
Vol 2065 (1) ◽  
pp. 012018
Author(s):  
Yingxiang Yang ◽  
Hongbin Pu ◽  
Xu Bei ◽  
Chunlan Chen ◽  
Min Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Performance Improvement ◽  
Surface Passivation ◽  
Photovoltaic Device ◽  
High Light ◽  
Organic Ligands ◽  
Photoelectric Characteristic ◽  
Photoelectric Properties ◽  
Pbs Quantum Dots

Abstract The photoelectric characteristic of ITO/PbS quantum dots (QDs)/Al structure based single and hybrid iodine ions(I−) passivated PbS QDs have been investigated. The ITO/PbS QDs/Al structure with hybrid I− passivation have demonstrated a high light dark ratio of 565.5 at -2V. It is the result of removing more organic ligands on the surface of PbS QDs and introducing larger amount of I−. This work demonstrates that the hybrid I− passivated process has great potential in the performance improvement of PbS QDs based photovoltaic device.

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