hopping energy
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2008 ◽  
Vol 5 (3) ◽  
pp. 768-771 ◽  
Author(s):  
T. Niebling ◽  
O. Rubel ◽  
W. Heimbrodt ◽  
W. Stolz ◽  
S. D. Baranovskii ◽  
...  

1997 ◽  
Vol 106 (8) ◽  
pp. 3157-3158
Author(s):  
S. D. Baranovskii ◽  
F. Hensel ◽  
J. E. Golub ◽  
P. Thomas

1996 ◽  
Vol 198-200 ◽  
pp. 222-225 ◽  
Author(s):  
S.D. Baranovskii ◽  
T. Faber ◽  
F. Hensel ◽  
P. Thomas

1988 ◽  
Vol 02 (05) ◽  
pp. 899-905
Author(s):  
M. D. Nuñez Regueiro ◽  
A. A. Aligia

BiO 3 based high Tc oxides are studied and compared to CuO 2 based ones. Both are described by a general Hamiltonian and studied by perturbation theory in the hopping energy. It is shown that a common polarization mechanism can give rise to pairing of the O holes added to the antiferromagnetic or disproportionated semiconducting states. The necessary conditions are: proximity of the M(Cu or Bi) and O levels, a gap in the electronic spectrum of the system and important nearest-neighbor M-O repulsion.


1983 ◽  
Vol 115 (1) ◽  
pp. 311-316 ◽  
Author(s):  
A. Ferreira da Silva ◽  
M. Fabbri ◽  
I. C. da Cunha Lima

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