scholarly journals Topological Properties of Electrons in Honeycomb Lattice with Detuned Hopping Energy

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Long-Hua Wu ◽  
Xiao Hu
2017 ◽  
Vol 09 (05) ◽  
pp. 1750064 ◽  
Author(s):  
Ali Ahmad

Graphene is an atomic scale honeycomb lattice made of the carbon atoms. Graph theory has given scientific expert an assortment of helpful apparatuses, for example, topological indices. A topological index [Formula: see text] of a graph [Formula: see text] is a number with the property that for each graph [Formula: see text] isomorphic to [Formula: see text] [Formula: see text] In this paper, we exhibit correct expressions for some topological indices for para-line graph of honeycomb networks and graphene.


2021 ◽  
Vol 38 (11) ◽  
pp. 117301
Author(s):  
Danwen Yuan ◽  
Yuefang Hu ◽  
Yanmin Yang ◽  
Wei Zhang

Two-dimensional (2D) topological insulators present a special phase of matter manifesting unique electronic properties. Till now, many monolayer binary compounds of Sb element, mainly with a honeycomb lattice, have been reported as 2D topological insulators. However, research of the topological insulating properties of the monolayer Sb compounds with square lattice is still lacking. Here, by means of the first-principles calculations, a monolayer SbI with square lattice is proposed to exhibit the tunable topological properties by applying strain. At different levels of the strain, the monolayer SbI shows two different structural phases: buckled square structure and buckled rectangular structure, exhibiting attracting topological properties. We find that in the buckled rectangular phase, when the strain is greater than 3.78%, the system experiences a topological phase transition from a nontrivial topological insulator to a trivial insulator, and the structure at the transition point actually is a Dirac semimetal possessing two type-I Dirac points. In addition, the system can achieve the maximum global energy gap of 72.5 meV in the topological insulator phase, implying its promising application at room temperature. This study extends the scope of 2D topological physics and provides a platform for exploring the low-dissipation quantum electronics devices.


2015 ◽  
Vol 91 (11) ◽  
Author(s):  
F. Grandi ◽  
F. Manghi ◽  
O. Corradini ◽  
C. M. Bertoni

2016 ◽  
Vol 94 (9) ◽  
pp. 814-820
Author(s):  
S.A. Owerre

This paper presents a connection between the topological properties of hardcore bosons and that of magnons in quantum spin magnets. We utilize the Haldane-like hardcore bosons on the honeycomb lattice as an example. We show that this system maps to a spin-1/2 quantum XY model with a next-nearest-neighbour Dzyaloshinsky–Moriya interaction. We obtain the magnon excitations of the quantum spin model and compute the edge states, Berry curvature, and thermal and spin Nernst conductivities. Because of the mapping from spin variables to bosons, the hardcore bosons possess the same nontrivial topological properties as those in quantum spin systems. These results are important in the study of magnetic excitations in quantum magnets and they are also useful for understanding the control of ultracold bosonic quantum gases in honeycomb optical lattices, which is experimentally accessible.


Author(s):  
Norman Davidson

The basic protein film technique for mounting nucleic acids for electron microscopy has proven to be a general and powerful tool for the working molecular biologist in characterizing different nucleic acids. It i s possible to measure molecular lengths of duplex and single-stranded DNAs and RNAs. In particular, it is thus possible to as certain whether or not the nucleic acids extracted from a particular source are or are not homogeneous in length. The topological properties of the polynucleotide chain (linear or circular, relaxed or supercoiled circles, interlocked circles, etc. ) can also be as certained.


2013 ◽  
Vol 45 (12) ◽  
pp. 1324-1333
Author(s):  
Baolin LI ◽  
Youguo CHEN ◽  
Xiangyong YUAN ◽  
Jackson Todd ◽  
Xiting HUANG

2020 ◽  
Vol 16 (2) ◽  
pp. 190-195 ◽  
Author(s):  
Süleyman Ediz ◽  
Murat Cancan

Background: Reckoning molecular topological indices of drug structures gives the data about the underlying topology of these drug structures. Novel anticancer drugs have been leading by researchers to produce ideal drugs. Materials and Methods: Pharmacological properties of these new drug agents explored by utilizing simulation strategies. Topological indices additionally have been utilized to research pharmacological properties of some drug structures. Novel alkylating agents based anticancer drug candidates and ve-degree molecular topological indices have been introduced recently. Results and Conclusion: In this study we calculate ve-degree atom-bond connectivity, harmonic, geometric-arithmetic and sum-connectivity molecular topological indices for the newly defined alkylating agents based dual-target anticancer drug candidates.


2020 ◽  
Vol 16 (4) ◽  
pp. 595-607 ◽  
Author(s):  
Mu Wen Chuan ◽  
Kien Liong Wong ◽  
Afiq Hamzah ◽  
Shahrizal Rusli ◽  
Nurul Ezaila Alias ◽  
...  

Catalysed by the success of mechanical exfoliated free-standing graphene, two dimensional (2D) semiconductor materials are successively an active area of research. Silicene is a monolayer of silicon (Si) atoms with a low-buckled honeycomb lattice possessing a Dirac cone and massless fermions in the band structure. Another advantage of silicene is its compatibility with the Silicon wafer fabrication technology. To effectively apply this 2D material in the semiconductor industry, it is important to carry out theoretical studies before proceeding to the next step. In this paper, an overview of silicene and silicene nanoribbons (SiNRs) is described. After that, the theoretical studies to engineer the bandgap of silicene are reviewed. Recent theoretical advancement on the applications of silicene for various field-effect transistor (FET) structures is also discussed. Theoretical studies of silicene have shown promising results for their application as FETs and the efforts to study the performance of bandgap-engineered silicene FET should continue to improve the device performance.


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