Investigation of Band Anticrossing Parameters for Dilute-Anion III-Nitride Alloys

2019 ◽  
Author(s):  
Justin C. Goodrich ◽  
Damir Borovac ◽  
Chee-Keong Tan ◽  
Nelson Tansu
Keyword(s):  
Nitride Alloys ◽  
Band Anticrossing

Investigation of Band Anticrossing Parameters for Dilute-Anion III-Nitride Alloys

2018 ◽  
Author(s):  
Justin C. Goodrich ◽  
Damir Borovac ◽  
Chee-Keong Tan ◽  
Nelson Tansu
Keyword(s):  
Nitride Alloys ◽  
Band Anticrossing

scholarly journals Band anticrossing in dilute nitrides

2004 ◽  
Vol 16 (31) ◽  
pp. S3355-S3372 ◽  
Author(s):  
W Shan ◽  
K M Yu ◽  
W Walukiewicz ◽  
J Wu ◽  
J W Ager ◽  
...  
Keyword(s):  
Dilute Nitrides ◽  
Band Anticrossing

Optical properties of oxygen-implanted CdS:O layers in terms of band anticrossing theory

2013 ◽  
Vol 47 (8) ◽  
pp. 1018-1025 ◽  
Author(s):  
N. K. Morozova ◽  
A. A. Kanakhin ◽  
I. N. Miroshnikova ◽  
V. G. Galstyan
Keyword(s):  
Optical Properties ◽  
Band Anticrossing

Group III-nitride alloys as photovoltaic materials

2004 ◽  
Author(s):  
Joel W. Ager III ◽  
Junqiao Wu ◽  
Kin M. Yu ◽  
R. E. Jones ◽  
S. X. Li ◽  
...  
Keyword(s):  
Group Iii ◽  
Photovoltaic Materials ◽  
Nitride Alloys ◽  
Group Iii Nitride

eg−t2g Sub Band Splitting via Crystal Field and Band Anticrossing Interaction in NixCd1-xO Thin Films

2021 ◽  
pp. 138908
Author(s):  
Arkaprava Das ◽  
Parasmani Rajput ◽  
Anumeet Kaur ◽  
C. Balasubramanian ◽  
D. Kanjilal ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystal Field ◽  
Band Splitting ◽  
Band Anticrossing

Successes and Predictions of A Pseudopotential Approach in Anion-Mixed Nitrides

2001 ◽  
Vol 692 ◽  
Author(s):  
L. Bellaiche ◽  
A. Al-Yacoub ◽  
N. A. Modine ◽  
E. D. Jones
Keyword(s):  
Solid Solutions ◽  
Complex Anion ◽  
High Accuracy ◽  
Nitride Alloys ◽  
Pseudopotential Approach ◽  
Strain Dependent ◽  
Very High

AbstractThe construction and the parameters of a new-strain dependent empirical pseudopotentials method are described and provided, respectively. This method is shown to reproduce with a very high accuracy some observed unusual properties in various complex anion-mixed nitride alloys. This method is also used to predict and understand anomalous effects that remain to be experimentally discovered in Ga1−yInyAs1−xNx quaternaries and GaAs0.5−xP0.5−xN2x solid solutions.

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