Metalorganic vapor phase epitaxy of AlN on sapphire with low etch pit density

D. D. Koleske; J. J. Figiel; D. L. Alliman; B. P. Gunning; J. M. Kempisty; J. R. Creighton; A. Mishima; K. Ikenaga

doi:10.1063/1.4984900

Metalorganic vapor phase epitaxy of AlN on sapphire with low etch pit density

Applied Physics Letters ◽

10.1063/1.4984900 ◽

2017 ◽

Vol 110 (23) ◽

pp. 232102 ◽

Cited By ~ 5

Author(s):

D. D. Koleske ◽

J. J. Figiel ◽

D. L. Alliman ◽

B. P. Gunning ◽

J. M. Kempisty ◽

...

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Etch Pit Density ◽

Etch Pit

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Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.l316 ◽

1998 ◽

Vol 37 (Part 2, No. 3B) ◽

pp. L316-L318 ◽

Cited By ~ 160

Author(s):

Motoaki Iwaya ◽

Tetsuya Takeuchi ◽

Shigeo Yamaguchi ◽

Christian Wetzel ◽

Hiroshi Amano ◽

...

Keyword(s):

High Temperature ◽

Low Temperature ◽

Buffer Layer ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy ◽

Etch Pit Density ◽

Etch Pit

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Density functional theory study on surface adsorptions in AlN metalorganic vapor phase epitaxy process

Applied Surface Science ◽

10.1016/j.apsusc.2020.148773 ◽

2021 ◽

Vol 544 ◽

pp. 148773

Author(s):

Peng Lin ◽

Nannan Niu ◽

Ran Zuo ◽

Yulong Fang ◽

Zhihong Feng

Keyword(s):

Density Functional Theory ◽

Vapor Phase ◽

Density Functional ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Density Functional Theory Study ◽

Functional Theory

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Selective-area growth and characterization of cubic GaN grown by metalorganic vapor phase epitaxy

Thin Solid Films ◽

10.1016/j.tsf.2020.138125 ◽

2020 ◽

Vol 709 ◽

pp. 138125

Author(s):

Pattana Suwanyangyaun ◽

Sakuntam Sanorpim ◽

Kentaro Onabe

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Selective Area Growth ◽

Selective Area ◽

Area Growth ◽

Cubic Gan

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Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(91)90469-l ◽

1991 ◽

Vol 107 (1-4) ◽

pp. 268-273 ◽

Cited By ~ 17

Author(s):

M.A. Tischler ◽

R.M. Potemski ◽

T.F. Kuech ◽

F. Cardone ◽

M.S. Goorsky ◽

...

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Acceptor Doping

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Study of the gas phase chemistry in the silicon doping of GaAs grown by metalorganic vapor phase epitaxy using tertiarybutylarsine as the group V source

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90130-9 ◽

1994 ◽

Vol 135 (3-4) ◽

pp. 423-433 ◽

Cited By ~ 13

Author(s):

J.M. Redwing ◽

T.F. Kuech ◽

D. Saulys ◽

D.F. Gaines

Keyword(s):

Gas Phase ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Silicon Doping ◽

Group V ◽

Gas Phase Chemistry ◽

Phase Chemistry

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Compensation of shallow impurities in oxygen‐doped metalorganic vapor phase epitaxy grown GaAs

Journal of Applied Physics ◽

10.1063/1.363811 ◽

1996 ◽

Vol 80 (12) ◽

pp. 6819-6826 ◽

Cited By ~ 9

Author(s):

J. W. Huang ◽

K. L. Bray ◽

T. F. Kuech

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Shallow Impurities

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Inverted Al0.25Ga0.75N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.3462294 ◽

2010 ◽

Vol 97 (1) ◽

pp. 013502 ◽

Cited By ~ 21

Author(s):

Kuo-Hua Chang ◽

Jinn-Kong Sheu ◽

Ming-Lun Lee ◽

Shang-Ju Tu ◽

Chih-Ciao Yang ◽

...

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy

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Improved High-Temperature and High-Power Characteristics of 1.3-µm Spot-Size Converter Integrated All-Selective Metalorganic Vapor Phase Epitaxy Grown Planar Buried Heterostructure Laser Diodes by Newly Introduced Multiple-Stripe Recombination Layers

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.1234 ◽

1999 ◽

Vol 38 (Part 1, No. 2B) ◽

pp. 1234-1238 ◽

Cited By ~ 3

Author(s):

Yuji Furushima ◽

Hiroyuki Yamazaki ◽

Koji Kudo ◽

Yasutaka Sakata ◽

Yuichiro Okunuki ◽

...

Keyword(s):

High Temperature ◽

Vapor Phase ◽

High Power ◽

Laser Diodes ◽

Spot Size ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Power Characteristics ◽

Heterostructure Laser ◽

Buried Heterostructure

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A phosphorous-rich structure of InP (001) produced by metalorganic vapor-phase epitaxy

Applied Physics Letters ◽

10.1063/1.124481 ◽

1999 ◽

Vol 75 (5) ◽

pp. 683-685 ◽

Cited By ~ 22

Author(s):

L. Li ◽

B.-K. Han ◽

D. Law ◽

C. H. Li ◽

Q. Fu ◽

...

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy

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Homoepitaxial growth of (0001)- and -oriented ZnO thin films via metalorganic vapor-phase epitaxy and their characterization

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2004.02.096 ◽

2004 ◽

Vol 265 (3-4) ◽

pp. 390-398 ◽

Cited By ~ 32

Author(s):

T.P. Smith ◽

H. McLean ◽

David J. Smith ◽

R.F. Davis

Keyword(s):

Thin Films ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Zno Thin Films ◽

Homoepitaxial Growth

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