Motion-Induced Radiation Due to an Atom in the Presence of a Graphene Plane

We study the motion-induced radiation due to the non-relativistic motion of an atom, coupled to the vacuum electromagnetic field by an electric dipole term, in the presence of a static graphene plate. After computing the probability of emission for an accelerated atom in empty space, we evaluate the corrections due to the presence of the plate. We show that the effect of the plate is to increase the probability of emission when the atom is near the plate and oscillates along a direction perpendicular to it. On the contrary, for parallel oscillations, there is a suppression. We also evaluate the quantum friction on an atom moving at constant velocity parallel to the plate. We show that there is a threshold for quantum friction: friction occurs only when the velocity of the atom is larger than the Fermi velocity of the electrons in graphene.

Clustering Artificial Atoms Induced by High-Frequency Electromagnetic Radiation in Graphene Monolayers of Multiwalled Carbon Nanotubes

A graphene-charge carrier confinement induced by high-frequency photons and a subsequent clustering of artificial atoms in graphene plane have been studied using electrophysical and Raman-spectroscopy methods. To fabricate the graphene n-p-n junctions, commensurable superlattice structures consisting of multi-walled carbon nanotubes (MWCNTs) have been formed utilizing a Langmuir-Blodgett technique. It has been shown that the p-n graphene junctions are sensitive to graphene lattice-deformation defects only. The levels of graphene defect do not host impurity electrons. One offers a mechanism of graphene monolayer self-repairing after a radiation damage. This mechanism is based on an existence of topologically protected Compton scatterers in graphene plane.

Object of defects of vacancy type in graphene plane into clusters and the influence of vacancy clusters on morphology and electronic properties of structure

This work is devoted to the study of the effect on the morphology and on the electronic properties of the graphene plane of defects of the vacancy type in the form of a vacancy cluster, depending on the size of the cluster. The optimal configurations of the arrangement of carbon atoms for the graphene plane from vacancy clusters are found. The electronic band structure is calculated for them. The calculations are performed by the ab initio method. The analysis of the dependence of the morphology of the structure and some parameters of the electronic structure on the size of the vacancy cluster is carried out. The results obtained are applicable to the analysis of the band structure of single-walled carbon tubes containing vacancy-type defects

Model of Field Electron Emission from the Edge of Flat Graphene into Vacuum

Graphene-based nanostructures are the promising materials for applications as electron emitters.The aim of the work is to study the field electron emission from the edge of a single graphene plane.In the semi-classical approximation, a model of field electron emission from the edge of a rectangular graphene sheet has been developed.The current density of field electron emission into vacuum from the edge of a flat graphene sheet was calculated depending on the magnitude of the pulling electric field strength.The analysis and comparison of limiting emission currents from graphene and from bulk systems have been carried out.The results of the work can be used in the development of graphene-based field effect cathodes.

Краевое легирование в графеновых приборах на подложках SiO-=SUB=-2-=/SUB=-

The conductivity of single layer and bilayer graphene ribbons 0.5–4 μm in width fabricated by oxygen plasma etching is studied experimentally. The dependence of the electron concentration in graphene on the ribbon width is revealed. This effect is explained by the edge doping of graphene due to defects arranged in SiO_2 near the ribbon edges. The method of the formation of abrupt p – n junctions in graphene and structures with a constant electron concentration gradient in the graphene plane with the help of edge doping is proposed.

A carbonaceous two-dimensional lattice with FeN4 units

Sublimation, deposition, and pyrolysis of iron phthalocyanine on a graphene plane at a carbonization-inducing temperature generate a carbonaceous two-dimensional lattice.