Thru-Hole Epitaxy: Is Remote Epitaxy Really Remote?

The remote epitaxy was originally proposed to grow a film, which is not in contact but crystallographically aligned with a substrate and easily detachable due to a van der Waals material as a space layer. Here we show that the claimed remote epitaxy is more likely to be nonremote ‘thru-hole’ epitaxy. On a substrate with thick and symmetrically incompatible van der Waals space layer or even with a three-dimensional amorphous oxide film in-between, we demonstratively grew GaN domains through thru-holes via connectedness-initiated epitaxial lateral overgrowth, not only readily detachable but also crystallographically aligned with a substrate. Our proposed nonremote thru-hole epitaxy, which is embarrassingly straightforward and undemanding, can provide wider applicability of the benefits known to be only available by the claimed remote epitaxy.

Thru-Hole Epitaxy: Is Remote Epitaxy Really Remote?

The remote epitaxy was originally proposed to grow a film, which is not in contact but crystallographically aligned with a substrate and easily detachable due to a van der Waals material as a space layer. Here we show that the claimed remote epitaxy is more likely to be nonremote `thru-hole' epitaxy. On a substrate with thick and symmetrically incompatible van der Waals space layer or even with a three-dimensional amorphous oxide film in-between, we demonstratively grew GaN domains through thru-holes via connectedness-initiated epitaxial lateral overgrowth, not only readily detachable but also crystallographically aligned with a substrate. Our proposed nonremote thru-hole epitaxy, which is embarrassingly straightforward and undemanding, can provide wider applicability of the benefits known to be only available by the claimed remote epitaxy.

Three-dimensional dynamic problems of elasticity theory about steady torsional oscillations of bimaterials “half-space – layer with a crack”

The three-dimensional dynamic problem of an elastic bimaterial "half-space − layer with a pennyshaped crack" is considered. The cracks surface are under time-stationary torsional loads. The problem is solved by boundary integral equations (BIE) method. Using solutions of Helmholtz potentials, the problem is reduced to a system of two BIE relatively unknown crack opening function. The dependences of the dynamic stress intensity factors mode III on the frequency of the applied load, the thickness of the layer, and the ratios of the elastic parameters of the materials body are analized.