scholarly journals Structural, Optical and Electrical Properties of N-doped ZnO Nanofilms by Plasma Enhanced Atomic Layer Deposition

2011 ◽  
Vol 49 (3) ◽  
pp. 357-360 ◽  
Author(s):  
Jin-Hwan Kim ◽  
Wan-Youn Yang ◽  
Yoon-Bong Hahn
2018 ◽  
Vol 84 ◽  
pp. 91-100 ◽  
Author(s):  
Prakash Uprety ◽  
Bart Macco ◽  
Maxwell M. Junda ◽  
Corey R. Grice ◽  
Wilhelmus M.M. Kessels ◽  
...  

RSC Advances ◽  
2016 ◽  
Vol 6 (69) ◽  
pp. 64879-64884 ◽  
Author(s):  
Ning Li ◽  
Li-ping Feng ◽  
Jie Su ◽  
Wei Zeng ◽  
Zheng-tang Liu

Composition, structure, optical and electrical properties of Al:WS2 (un-doped and Al-doped WS2) films prepared by atomic layer deposition (ALD) and CS2 vulcanization processing have been studied.


2015 ◽  
Vol 3 (13) ◽  
pp. 3095-3107 ◽  
Author(s):  
Diana Garcia-Alonso ◽  
Stephen E. Potts ◽  
Cristian A. A. van Helvoirt ◽  
Marcel A. Verheijen ◽  
Wilhelmus M. M. Kessels

The doping efficiency and hence the electrical properties of atomic layer deposited ZnO can be improved by using a novel, safer boron precursor.


2018 ◽  
Vol 6 (46) ◽  
pp. 12518-12528 ◽  
Author(s):  
Hong-Ping Ma ◽  
Hong-Liang Lu ◽  
Tao Wang ◽  
Jian-Guo Yang ◽  
Xing Li ◽  
...  

Ultrathin Ga2O3 films nanomixed with few atom-thick SiO2 interlayer were deposited on silicon and quartz substrates through plasma-enhanced atomic layer deposition.


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