Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization

RSC Advances ◽  
2016 ◽  
Vol 6 (69) ◽  
pp. 64879-64884 ◽  
Author(s):  
Ning Li ◽  
Li-ping Feng ◽  
Jie Su ◽  
Wei Zeng ◽  
Zheng-tang Liu
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Optical And Electrical Properties ◽  
Layer Deposition ◽  
Composition Structure

Composition, structure, optical and electrical properties of Al:WS2 (un-doped and Al-doped WS2) films prepared by atomic layer deposition (ALD) and CS2 vulcanization processing have been studied.

scholarly journals Optical and electrical properties of H2 plasma-treated ZnO films prepared by atomic layer deposition using supercycles

2018 ◽  
Vol 84 ◽  
pp. 91-100 ◽  
Author(s):  
Prakash Uprety ◽  
Bart Macco ◽  
Maxwell M. Junda ◽  
Corey R. Grice ◽  
Wilhelmus M.M. Kessels ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Films ◽  
Optical And Electrical Properties ◽  
Layer Deposition

Precise control of the microstructural, optical, and electrical properties of ultrathin Ga2O3 film through nanomixing with few atom-thick SiO2 interlayer via plasma enhanced atomic layer deposition

2018 ◽  
Vol 6 (46) ◽  
pp. 12518-12528 ◽  
Author(s):  
Hong-Ping Ma ◽  
Hong-Liang Lu ◽  
Tao Wang ◽  
Jian-Guo Yang ◽  
Xing Li ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Optical And Electrical Properties ◽  
Precise Control ◽  
Ga2o3 Film ◽  
Layer Deposition ◽  
Quartz Substrates

Ultrathin Ga2O3 films nanomixed with few atom-thick SiO2 interlayer were deposited on silicon and quartz substrates through plasma-enhanced atomic layer deposition.

scholarly journals Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition

Nanomaterials ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 1008 ◽  
Author(s):  
Hong-Ping Ma ◽  
Hong-Liang Lu ◽  
Jia-He Yang ◽  
Xiao-Xi Li ◽  
Tao Wang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Oxygen Concentration ◽  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
Band Gap Energy ◽  
Optical And Electrical Properties ◽  
X Ray ◽  
Layer Deposition ◽  
Effect Of Oxygen

In this study, silicon nitride (SiNx) thin films with different oxygen concentration (i.e., SiON film) were precisely deposited by plasma enhanced atomic layer deposition on Si (100) substrates. Thus, the effect of oxygen concentration on film properties is able to be comparatively studied and various valuable results are obtained. In detail, x-ray reflectivity, x-ray photoelectron spectroscopy, atomic force microscopy, and spectroscopic ellipsometry are used to systematically characterize the microstructural, optical, and electrical properties of SiON film. The experimental results indicate that the surface roughness increases from 0.13 to 0.2 nm as the oxygen concentration decreases. The refractive index of the SiON film reveals an increase from 1.55 to 1.86 with decreasing oxygen concentration. Accordingly, the band-gap energy of these films determined by oxygen 1s-peak analysis decreases from 6.2 to 4.8 eV. Moreover, the I-V tests demonstrate that the film exhibits lower leakage current and better insulation for higher oxygen concentration in film. These results indicate that oxygen affects microstructural, optical, and electrical properties of the prepared SiNx film.

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