scholarly journals Epitaxial Deposition of Niobium Nitride by Sputtering

1974 ◽  
Vol 13 (S1) ◽  
pp. 613 ◽  
Author(s):  
Shin Kosaka ◽  
Yutaka Onodera
Keyword(s):  
Niobium Nitride ◽  
Epitaxial Deposition

Plasmonic characteristics of niobium nitride thin films modulated by assisting ions

2021 ◽  
Vol 24 ◽  
pp. 101024
Author(s):  
Chang Gao ◽  
Yujing Ran ◽  
Qian Guo ◽  
Tianrun Wang ◽  
Huiping Lu ◽  
...  
Keyword(s):  
Thin Films ◽  
Niobium Nitride

Substrate dependent epitaxy of superconducting niobium nitride thin films grown by pulsed laser deposition

2021 ◽  
Vol 551 ◽  
pp. 149333
Author(s):  
T. Roch ◽  
M. Gregor ◽  
S. Volkov ◽  
M. Čaplovičová ◽  
L. Satrapinskyy ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Niobium Nitride ◽  
Laser Deposition

scholarly journals Room temperature deposition of superconducting niobium nitride films by ion beam assisted sputtering

APL Materials ◽  
2018 ◽  
Vol 6 (7) ◽  
pp. 076107 ◽  
Author(s):  
Tomas Polakovic ◽  
Sergi Lendinez ◽  
John E. Pearson ◽  
Axel Hoffmann ◽  
Volodymyr Yefremenko ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Niobium Nitride ◽  
Temperature Deposition

Studies of Nanomechanical Properties of Pulsed Laser Deposited NbN films on Si Using Nanoindentation

2012 ◽  
Vol 1424 ◽  
Author(s):  
M. A. Mamun ◽  
A. H. Farha ◽  
Y. Ufuktepe ◽  
H. E. Elsayed-Ali ◽  
A. A. Elmustafa
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Niobium Nitride ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Force Microscopy ◽  
Atomic Force ◽  
Wide Range ◽  
Pile Up ◽  
Average Modulus

ABSTRACTNanomechanical and structural properties of pulsed laser deposited niobium nitride thin films were investigated using X-ray diffraction, atomic force microscopy, and nanoindentation. NbN film reveals cubic δ-NbN structure with the corresponding diffraction peaks from the (111), (200), and (220) planes. The NbN thin films depict highly granular structure, with a wide range of grain sizes that range from 15-40 nm with an average surface roughness of 6 nm. The average modulus of the film is 420±60 GPa, whereas for the substrate the average modulus is 180 GPa, which is considered higher than the average modulus for Si reported in the literature due to pile-up. The hardness of the film increases from an average of 12 GPa for deep indents (Si substrate) measured using XP CSM and load control (LC) modes to an average of 25 GPa measured using the DCM II head in CSM and LC modules. The average hardness of the Si substrate is 12 GPa.

scholarly journals Niobium Nitride Nb4N5as a New High-Performance Electrode Material for Supercapacitors

2015 ◽  
Vol 2 (12) ◽  
pp. 1500126 ◽  
Author(s):  
Houlei Cui ◽  
Guilian Zhu ◽  
Xiangye Liu ◽  
Fengxin Liu ◽  
Yian Xie ◽  
...  
Keyword(s):  
Electrode Material ◽  
High Performance ◽  
Niobium Nitride

Synthesis and SERS activity of niobium nitride thin films via reduction nitridation of sol-gel derived films

2022 ◽  
Vol 123 ◽  
pp. 111879
Author(s):  
Xuepei Wang ◽  
Zhengang Wu ◽  
Yingna Wei ◽  
Mingming Wu ◽  
Ying Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Niobium Nitride
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