Lecture Notes on Equilibrium Point Defects and Thermophysical Properties of Metals

10.1142/4279 ◽  
2000 ◽  
Author(s):  
Yaakov Kraftmakher
Keyword(s):  
Equilibrium Point ◽  
Point Defects ◽  
Thermophysical Properties ◽  
Lecture Notes

Equilibrium point defects in intermetallics with theB2 structure: NiAl and FeAl

1993 ◽  
Vol 48 (9) ◽  
pp. 6712-6715 ◽  
Author(s):  
C. L. Fu ◽  
Y.-Y. Ye ◽  
M. H. Yoo ◽  
K. M. Ho
Keyword(s):  
Equilibrium Point ◽  
Point Defects

Equilibrium point defects in TiAl studied by PAC

1993 ◽  
Vol 79 (1-4) ◽  
pp. 745-748 ◽  
Author(s):  
Jiawen Fan ◽  
Gary S. Collins
Keyword(s):  
Equilibrium Point ◽  
Point Defects

scholarly journals Multiscale Modelling of Self-Organization of Non-Equilibrium Point Defects in Irradiated $\alpha$-Zirconium

2017 ◽  
Vol 18 (4) ◽  
pp. 295-400 ◽  
Author(s):  
V. O. Kharchenko ◽  
I. O. Lysenko ◽  
O. M. Shchokotova ◽  
A. I. Bashtova ◽  
D. O. Kharchenko ◽  
...  
Keyword(s):  
Equilibrium Point ◽  
Point Defects ◽  
Multiscale Modelling ◽  
Self Organization ◽  
Non Equilibrium

On equilibrium point defects in metals

1996 ◽  
Vol 74 (3) ◽  
pp. 811-820 ◽  
Author(s):  
Yaakov Kraftmakher
Keyword(s):  
Equilibrium Point ◽  
Point Defects

Structural quality ofHg1−xCdxTe: Equilibrium point defects

1985 ◽  
Vol 31 (10) ◽  
pp. 6616-6632 ◽  
Author(s):  
C. G. Morgan-Pond ◽  
R. Raghavan
Keyword(s):  
Equilibrium Point ◽  
Point Defects ◽  
Structural Quality

Diffusion in Gallium Arsenide and GaAs-Based Layered Structures

1989 ◽  
Vol 163 ◽  
Author(s):  
U. Gösele ◽  
T. Y. Tan ◽  
Shaofeng Yu
Keyword(s):  
Gallium Arsenide ◽  
Equilibrium Point ◽  
Point Defects ◽  
Layered Structures ◽  
Diffusion Behavior ◽  
Self Diffusion ◽  
Diffusion Mechanisms ◽  
The Difference ◽  
Positively Charged ◽  
Non Equilibrium

AbstractThe mechanisms of Ga self-diffusion can be derived from interdiffusion experiments in intrinsic and doped GaAs-based superlattices. These experiments allow to conclude that Ga self-diffusion in intrinsic and n-doped GaAs is carried by triply negatively charged gallium vacancies whereas in p-doped GaAs positively charged gallium self-interstitials dominate Ga self-diffusion. The diffusion mechanisms of Zn and Be are discussed with special emphasis on the difference between their in- and out-diffusion behavior which is due to diffusion-induced non-equilibrium point defects.

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