X-ray Absorption Studies on the Growth Process of Radio-Frequency-Magnetron-Sputtered Boron Nitride Films: Effects of Bias Voltage and Substrate Temperature

2013 ◽  
Vol 52 (4R) ◽  
pp. 045602 ◽  
Author(s):  
Satoko Hori ◽  
Masahito Niibe ◽  
Takuya Kotaka ◽  
Kiyotoshi Fujii ◽  
Keisuke Yoshiki ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Bias Voltage ◽  
Growth Process ◽  
Radio Frequency Magnetron ◽  
X Ray ◽  
Absorption Studies ◽  
X Ray Absorption ◽  
Boron Nitride Films

X-ray absorption studies of phase formation in a Ti/TiN coating on cubic boron nitride

2004 ◽  
Vol 362 (1-2) ◽  
pp. 171-177 ◽  
Author(s):  
E Piskorska ◽  
K Lawniczak-Jablonska ◽  
I.N Demchenko ◽  
E Benko ◽  
E Welter
Keyword(s):  
Boron Nitride ◽  
Phase Formation ◽  
Cubic Boron Nitride ◽  
Tin Coating ◽  
X Ray ◽  
Absorption Studies ◽  
X Ray Absorption

High-resolution x-ray absorption studies of core excitons in hexagonal boron nitride

2012 ◽  
Vol 101 (19) ◽  
pp. 191604 ◽  
Author(s):  
Lu Hua Li ◽  
Mladen Petravic ◽  
Bruce C. C. Cowie ◽  
Tan Xing ◽  
Robert Peter ◽  
...  
Keyword(s):  
High Resolution ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
X Ray ◽  
Absorption Studies ◽  
X Ray Absorption

Influence of d.c. substrate bias voltage on growth of cubic boron nitride films by radio frequency sputter

2000 ◽  
Vol 9 (9-10) ◽  
pp. 1779-1781
Author(s):  
Jinxiang Deng ◽  
Bo Wang ◽  
Liwen Tan ◽  
Bentao Cui ◽  
Hui Yan ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Radio Frequency ◽  
Bias Voltage ◽  
Cubic Boron Nitride ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Boron Nitride Films

X-ray absorption studies on cubic boron nitride thin films

2007 ◽  
Vol 101 (1) ◽  
pp. 013710 ◽  
Author(s):  
X. T. Zhou ◽  
T. K. Sham ◽  
W. J. Zhang ◽  
C. Y. Chan ◽  
I. Bello ◽  
...  
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
X Ray ◽  
Absorption Studies ◽  
X Ray Absorption

scholarly journals Near-Edge X-Ray Absorption Fine Structure Examination of Chemical Bonding in Sputter Deposited Boron and Boron-Nitride Films

1996 ◽  
Vol 437 ◽  
Author(s):  
A.F. Jankowski ◽  
I. Jimenez ◽  
J.P. Hayes ◽  
D.K. Shuh ◽  
W.M. Tong ◽  
...  
Keyword(s):  
Fine Structure ◽  
Boron Nitride ◽  
Chemical Bonding ◽  
Local Order ◽  
X Ray ◽  
Absorption Fine ◽  
Sputter Deposited ◽  
X Ray Absorption ◽  
Boron Nitride Films ◽  
Distinguishing Features

AbstractNear-edge x-ray absorption fine structure (NEXAFS) is used to examine the chemical bonding in boron and boron-nitride films sputter deposited from a fully-dense, pure boron target. Reactive sputtering is used to prepare the boron-nitride and multilayered films. Although the process of sputter deposition often produces films that lack long range order, NEXAFS reveals the distinguishing features of sp2 and sp3 hybridization that are associated with different crystalline structures. The sensitivity of NEXAFS to local order further provides details in bonding modifications that exist in these films.

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