Detection of intrinsic stress in cubic boron nitride films by x-ray absorption near-edge structure: Stress relaxation mechanisms by simultaneous ion implantation during growth

2007 ◽  
Vol 76 (17) ◽  
Author(s):  
R. Gago ◽  
B. Abendroth ◽  
J. I. Cerdá ◽  
I. Jiménez ◽  
W. Möller
Keyword(s):  
Stress Relaxation ◽  
Boron Nitride ◽  
Ion Implantation ◽  
Cubic Boron Nitride ◽  
Intrinsic Stress ◽  
Edge Structure ◽  
X Ray ◽  
X Ray Absorption ◽  
Boron Nitride Films

Theoretical and experimental investigation of point defects in cubic boron nitride

MRS Advances ◽  
2017 ◽  
Vol 2 (29) ◽  
pp. 1545-1550 ◽  
Author(s):  
Nicholas L. McDougall ◽  
Jim G. Partridge ◽  
Desmond W. M. Lau ◽  
Philipp Reineck ◽  
Brant C. Gibson ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Optical Emission ◽  
Wide Band ◽  
Wide Band Gap ◽  
Edge Structure ◽  
X Ray ◽  
Substitutional Defects ◽  
X Ray Absorption ◽  
Annealing Experiments

ABSTRACTCubic boron nitride (cBN) is a synthetic wide band gap material that has attracted attention due to its high thermal conductivity, optical transparency and optical emission. In this work, defects in cBN have been investigated using experimental and theoretical X-ray absorption near edge structure (XANES). Vacancy and O substitutional defects were considered, with O substituted at the N site (ON) to be the most energetically favorable. All defects produce unique signatures in either the B or N K-edges and can thus be identified using XANES. The calculations coupled with electron-irradiation / annealing experiments strongly suggest that ON is the dominant defect in irradiated cBN and remains after annealing. This defect is a likely source of optical emission in cBN.

Quantitative phase analysis of cubic boron nitride based composites by X-ray absorption near edge structure

2007 ◽  
Vol 62 (5) ◽  
pp. 461-469 ◽  
Author(s):  
Edyta Piskorska ◽  
Krystyna Lawniczak-Jablonska ◽  
Roman Minikayev ◽  
Anna Wolska ◽  
Wojciech Paszkowicz ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Phase Analysis ◽  
Cubic Boron Nitride ◽  
Quantitative Phase Analysis ◽  
Edge Structure ◽  
X Ray ◽  
Quantitative Phase ◽  
X Ray Absorption

X-ray absorption studies of phase formation in a Ti/TiN coating on cubic boron nitride

2004 ◽  
Vol 362 (1-2) ◽  
pp. 171-177 ◽  
Author(s):  
E Piskorska ◽  
K Lawniczak-Jablonska ◽  
I.N Demchenko ◽  
E Benko ◽  
E Welter
Keyword(s):  
Boron Nitride ◽  
Phase Formation ◽  
Cubic Boron Nitride ◽  
Tin Coating ◽  
X Ray ◽  
Absorption Studies ◽  
X Ray Absorption

Growth of low-stress cubic boron nitride films by simultaneous medium-energy ion implantation

2002 ◽  
Vol 80 (1) ◽  
pp. 55-57 ◽  
Author(s):  
C. Fitz ◽  
A. Kolitsch ◽  
W. Möller ◽  
W. Fukarek
Keyword(s):  
Boron Nitride ◽  
Ion Implantation ◽  
Cubic Boron Nitride ◽  
Medium Energy ◽  
Boron Nitride Films

Growth of cubic boron nitride films by ibad and triode sputtering: development of intrinsic stress

2001 ◽  
Vol 10 (12) ◽  
pp. 2167-2173
Author(s):  
M.A Djouadi ◽  
V Mortet ◽  
S Khandozhko ◽  
S Ilias ◽  
V Stambouli
Keyword(s):  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Intrinsic Stress ◽  
Boron Nitride Films

Reduction of intrinsic stress in cubic boron nitride films

1999 ◽  
Vol 341 (1-2) ◽  
pp. 238-245 ◽  
Author(s):  
J. Ullmann ◽  
A.J. Kellock ◽  
J.E.E. Baglin
Keyword(s):  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Intrinsic Stress ◽  
Boron Nitride Films

Low Energy Ion Impact-enhanced Growth of Cubic Boron Nitride in a Supersonic Nitrogen/argon Plasma Flow

1997 ◽  
Vol 12 (8) ◽  
pp. 2014-2026 ◽  
Author(s):  
D. H. Berns ◽  
M. A. Cappelli
Keyword(s):  
Boron Nitride ◽  
Plasma Flow ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Cubic Boron Nitride ◽  
Argon Plasma ◽  
Transmission Spectra ◽  
X Ray ◽  
Ion Energies ◽  
Boron Nitride Films

This paper describes the growth and analysis of cubic boron nitride films in a low-density, supersonic nitrogen/argon plasma flow into which boron trichloride gas was injected. Both hexagonal boron nitride (h-BN) and cubic boron nitride (c-BN) were synthesized using this apparatus. Phase selectivity is obtained by applying a relatively low negative bias voltage to the substrate. All of the films described in this paper were grown on {100} silicon wafers at substrate temperatures varying from 400–700 °C. Boron nitride films with greater than 90% cubic phase were successfully synthesized with this method. The films were analyzed using infrared spectroscopy, x-ray photoelectron spectroscopy, and scanning electron microscopy. The volumetric percentages of the hexagonal and cubic phases were determined from model fits to the infrared transmission spectra of the films. X-ray photoelectron spectroscopy provided qualitative evidence for the presence and/or lack of sp2 bonding through the identification of a π-plasmon feature in the spectra. Infrared reflectance spectra are used to provide insight into the growth mechanisms leading to c-BN formation and have revealed features which are not present in the transmission spectra, specifically the 1305 cm−1 LO mode of c-BN and the 1610 cm−1 LO mode of h-BN. The mean ion energies involved with this bias-enhanced chemical vapor deposition (CVD) process are much lower than the ion energies in traditional physical vapor deposition (PVD) processes; however, the ion fluxes (currents) used in this CVD process are at least an order of magnitude higher, resulting in a total momentum transfer to the deposited atoms through ion bombardment that is at least equal to or greater than that reported for many ion-enhanced PVD processes.

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