Preparation of cubic boron nitride films by radio frequency magnetron sputtering and radio frequency ion plating

1996 ◽  
Vol 68 (7) ◽  
pp. 909-911 ◽  
Author(s):  
S. Ulrich ◽  
J. Scherer ◽  
J. Schwan ◽  
I. Barzen ◽  
K. Jung ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Cubic Boron Nitride ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Ion Plating ◽  
Boron Nitride Films

Preparation of Nanocrystalline Cubic Boron Nitride Coating by Magnetron Sputtering Method

2015 ◽  
Vol 656-657 ◽  
pp. 80-85
Author(s):  
Zhao Zhi Liu ◽  
Feng Xu ◽  
Xu Hui Zhang ◽  
Dun Wen Zuo
Keyword(s):  
Boron Nitride ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Hexagonal Phase ◽  
Cubic Boron Nitride ◽  
Chemical Vapor ◽  
Radio Frequency Magnetron ◽  
Cubic Phase ◽  
Radio Frequency Magnetron Sputtering ◽  
Substrate Bias Voltage

Cubic Boron Nitride (cBN) has wide application prospect in the field of high performance cutting tool, for its outstanding mechanical properties. In this paper, the cBN coating was synthesized on cement carbide by chemical vapor deposition nanocrystalline diamond interlayer in radio frequency magnetron sputtering system. The SEM, FTIR and AFM were used to investigate the microstructure, purity and morphology of the cBN film. The research was carried out on the effect of the deposition parameters on the cBN content in the film. High temperature and high pressure locally in the substrate is an important factor of transformation of cubic phase BN from hexagonal phase BN. There is a narrow optimization parameters window in cBN synthesis by ion bombardment assist radio frequency magnetron sputtering method. The good quality of cBN film can be obtained by a combination of moderate substrate bias voltage and gas pressure, high substrate temperature and a certain N2 partial pressure.

scholarly journals Effects in the Optical and Structural Properties Caused by Mg or Zn Doping of GaN Films Grown via Radio-Frequency Magnetron Sputtering Using Laboratory-Prepared Targets

2021 ◽  
Vol 11 (15) ◽  
pp. 6990
Author(s):  
Erick Gastellóu ◽  
Godofredo García ◽  
Ana María Herrera ◽  
Crisoforo Morales ◽  
Rafael García ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Hexagonal Structure ◽  
Binding Energies ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray ◽  
Diffraction Patterns ◽  
Mg Doped

GaN films doped with Mg or Zn were obtained via radio-frequency magnetron sputtering on silicon substrates at room temperature and used laboratory-prepared targets with Mg-doped or Zn-doped GaN powders. X-ray diffraction patterns showed broadening peaks, which could have been related to the appearance of nano-crystallites with an average of 7 nm. Scanning electron microscopy and transmission electron microscopy showed good adherence to silicon non-native substrate, as well as homogeneity, with a grain size average of 0.14 µm, and 0.16 µm for the GaN films doped with Zn or Mg, respectively. X-ray photo-electron spectroscopy demonstrated the presence of a very small amount of magnesium (2.10 mol%), and zinc (1.15 mol%) with binding energies of 1303.18, and 1024.76 eV, respectively. Photoluminescence spectrum for the Zn-doped GaN films had an emission range from 2.89 to 3.0 eV (429.23–413.50 nm), while Mg-doped GaN films had an energy emission in a blue-violet band with a range from 2.80 to 3.16 eV (443.03–392.56 nm). Raman spectra showed the classical vibration modes A1(TO), E1(TO), and E2(High) for the hexagonal structure of GaN.

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