Low interface trap density Al2O3/In0.53Ga0.47As MOS capacitor fabricated on MOCVD-grown InGaAs epitaxial layer on Si substrate

2014 ◽  
Vol 7 (4) ◽  
pp. 041202 ◽  
Author(s):  
Yueh-Chin Lin ◽  
Mao-Lin Huang ◽  
Chen-Yu Chen ◽  
Meng-Ku Chen ◽  
Hung-Ta Lin ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Si Substrate ◽  
Mos Capacitor

Effects of Post-Deposition Annealing Time on Metal-Organic Decomposed Lanthanum Cerium Oxide Film Spin-Coated on Si Substrate

2014 ◽  
Vol 1024 ◽  
pp. 364-367 ◽  
Author(s):  
Way Foong Lim ◽  
Zainovia Lockman ◽  
Kuan Yew Cheong
Keyword(s):  
Cerium Oxide ◽  
Dwell Time ◽  
Trap Density ◽  
Oxide Semiconductor ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Si Substrate ◽  
Post Deposition Annealing ◽  
Fixed Temperature ◽  
Post Deposition

Metal-oxide-semiconductor characteristics of MOD-derived lanthanum cerium oxide (LaxCeyOz) film deposited on n-type Si substrate have been studied. Post-deposition annealing of the oxide was performed in argon atmosphere for a dwell time, ranging from 15 to 120 min at a fixed temperature of 400°C. Results demonstrated presence of positively charged oxygen vacancies in all of the oxides post-deposition annealed for different dwell time. Acquisition of the lowest effective oxide charge as well as the lowest interface trap density and total interface trap density in oxide annealed for 120 min has led to the attainment of the highest breakdown voltage, surpassing other oxides.

Impact of interface trap density at metal/SiNx/n+MOS capacitor in multilayered Si solar cells

2014 ◽  
Vol 3 (2) ◽  
pp. 101-105 ◽  
Author(s):  
Santosh K. Sahoo ◽  
Bhushan L. Sopori ◽  
Durga Misra ◽  
Rene Rivero ◽  
Nuggehalli M. Ravindra
Keyword(s):  
Solar Cells ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Mos Capacitor ◽  
Si Solar Cells

Analyzing the interface trap density in SiGe capacitors using an abnormal flat band voltage shift at low temperature

2020 ◽  
Vol 13 (11) ◽  
pp. 111006
Author(s):  
Li-Chuan Sun ◽  
Chih-Yang Lin ◽  
Po-Hsun Chen ◽  
Tsung-Ming Tsai ◽  
Kuan-Ju Zhou ◽  
...  
Keyword(s):  
Low Temperature ◽  
Trap Density ◽  
Flat Band ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Flat Band Voltage ◽  
Voltage Shift

Direct Measurement of Top and Sidewall Interface Trap Density in SOI FinFETs

2007 ◽  
Vol 28 (3) ◽  
pp. 232-234 ◽  
Author(s):  
G. Kapila ◽  
B. Kaczer ◽  
A. Nackaerts ◽  
N. Collaert ◽  
G. V. Groeseneken
Keyword(s):  
Direct Measurement ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

2008 ◽  
Vol 55 (2) ◽  
pp. 547-556 ◽  
Author(s):  
Koen Martens ◽  
Chi On Chui ◽  
Guy Brammertz ◽  
Brice De Jaeger ◽  
Duygu Kuzum ◽  
...  
Keyword(s):  
High Mobility ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Mos Devices ◽  
Semiconductor Substrates

scholarly journals Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

2014 ◽  
Vol 104 (13) ◽  
pp. 131605 ◽  
Author(s):  
Thenappan Chidambaram ◽  
Dmitry Veksler ◽  
Shailesh Madisetti ◽  
Andrew Greene ◽  
Michael Yakimov ◽  
...  
Keyword(s):  
Quantum Well ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Trap Density ◽  
Oxide Semiconductor ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Hall Method
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