A novel technique to measure interface trap density in a GaAs MOS capacitor using time-varying magnetic fields

2016 ◽  
Author(s):  
Aditya N. Roy Choudhury ◽  
V. Venkataraman
Keyword(s):  
Magnetic Fields ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Time Varying ◽  
Mos Capacitor ◽  
Novel Technique

Impact of interface trap density at metal/SiNx/n+MOS capacitor in multilayered Si solar cells

2014 ◽  
Vol 3 (2) ◽  
pp. 101-105 ◽  
Author(s):  
Santosh K. Sahoo ◽  
Bhushan L. Sopori ◽  
Durga Misra ◽  
Rene Rivero ◽  
Nuggehalli M. Ravindra
Keyword(s):  
Solar Cells ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Mos Capacitor ◽  
Si Solar Cells

Low interface trap density Al2O3/In0.53Ga0.47As MOS capacitor fabricated on MOCVD-grown InGaAs epitaxial layer on Si substrate

2014 ◽  
Vol 7 (4) ◽  
pp. 041202 ◽  
Author(s):  
Yueh-Chin Lin ◽  
Mao-Lin Huang ◽  
Chen-Yu Chen ◽  
Meng-Ku Chen ◽  
Hung-Ta Lin ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Si Substrate ◽  
Mos Capacitor

Analyzing the interface trap density in SiGe capacitors using an abnormal flat band voltage shift at low temperature

2020 ◽  
Vol 13 (11) ◽  
pp. 111006
Author(s):  
Li-Chuan Sun ◽  
Chih-Yang Lin ◽  
Po-Hsun Chen ◽  
Tsung-Ming Tsai ◽  
Kuan-Ju Zhou ◽  
...  
Keyword(s):  
Low Temperature ◽  
Trap Density ◽  
Flat Band ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Flat Band Voltage ◽  
Voltage Shift

Direct Measurement of Top and Sidewall Interface Trap Density in SOI FinFETs

2007 ◽  
Vol 28 (3) ◽  
pp. 232-234 ◽  
Author(s):  
G. Kapila ◽  
B. Kaczer ◽  
A. Nackaerts ◽  
N. Collaert ◽  
G. V. Groeseneken
Keyword(s):  
Direct Measurement ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

2008 ◽  
Vol 55 (2) ◽  
pp. 547-556 ◽  
Author(s):  
Koen Martens ◽  
Chi On Chui ◽  
Guy Brammertz ◽  
Brice De Jaeger ◽  
Duygu Kuzum ◽  
...  
Keyword(s):  
High Mobility ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Mos Devices ◽  
Semiconductor Substrates

scholarly journals Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

2014 ◽  
Vol 104 (13) ◽  
pp. 131605 ◽  
Author(s):  
Thenappan Chidambaram ◽  
Dmitry Veksler ◽  
Shailesh Madisetti ◽  
Andrew Greene ◽  
Michael Yakimov ◽  
...  
Keyword(s):  
Quantum Well ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Trap Density ◽  
Oxide Semiconductor ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Hall Method
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