scholarly journals Comparison of neutron induced single event upsets in 14 nm FinFET and 65 nm planar static random access memory devices

2020 ◽  
Vol 69 (5) ◽  
pp. 056101
Author(s):  
Zhan-Gang Zhang ◽  
Zhi-Feng Lei ◽  
Teng Tong ◽  
Xiao-Hui Li ◽  
Song-Lin Wang ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Memory Devices ◽  
Single Event ◽  
Access Memory ◽  
Single Event Upsets

scholarly journals Single event upsets sensitivity of low energy proton in nanometer static random access memory

2016 ◽  
Vol 65 (6) ◽  
pp. 068501
Author(s):  
Luo Yin-Hong ◽  
Zhang Feng-Qi ◽  
Wang Yan-Ping ◽  
Wang Yuan-Ming ◽  
Guo Xiao-Qiang ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Low Energy ◽  
Static Random Access Memory ◽  
Single Event ◽  
Access Memory ◽  
Single Event Upsets ◽  
Energy Proton

Electron-Induced Single-Event Upsets in Static Random Access Memory

2013 ◽  
Vol 60 (6) ◽  
pp. 4122-4129 ◽  
Author(s):  
M. P. King ◽  
R. A. Reed ◽  
R. A. Weller ◽  
M. H. Mendenhall ◽  
R. D. Schrimpf ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Single Event ◽  
Access Memory ◽  
Single Event Upsets

Single event upset on static random access memory devices due to spallation, reactor, and monoenergetic neutrons

2019 ◽  
Vol 28 (10) ◽  
pp. 104212
Author(s):  
Xiao-Ming Jin ◽  
Wei Chen ◽  
Jun-Lin Li ◽  
Chao Qi ◽  
Xiao-Qiang Guo ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Memory Devices ◽  
Single Event Upset ◽  
Single Event ◽  
Access Memory

scholarly journals Triggering WORM/SRAM Memory Conversion by Composite Oxadiazole in Polymer Resistive Switching Device

2019 ◽  
Vol 2019 ◽  
pp. 1-8
Author(s):  
Enming Zhao ◽  
Xiaodan Liu ◽  
Guangyu Liu ◽  
Bao Zhou
Keyword(s):  
Charge Transfer ◽  
Small Molecule ◽  
Random Access ◽  
Electrical Characterization ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Internal Electrode ◽  
Switching Device

Electrical characterization indicates that the nonvolatile write once read many (WORM) times/volatile static random access memory (SRAM) conversion was triggered by the composite of the oxadiazole small molecule. FTO/PMMA/Ag device possesses nonvolatile WORM memory behavior, while the FTO/PMMA+oxadiazole/Ag device shows vastly different volatile SRAM feature. The FTO/PMMA/Ag and FTO/PMMA+oxadiazole/Ag memory devices both exhibit high ON/OFF ratio nearly 104. The additive oxadiazole small molecule in the polymethyl methacrylate was suggested to form an internal electrode and serve as a channel during the charge transfer process, which is easy to both the charge transfer and back charge transfer, as a consequence, the WORM/SRAM conversion upon oxadiazole small molecule complexation was triggered. The results observed in this work manifest the significance of oxadiazole small molecule to the memory effects and will arouse the research interest about small molecule composite applied in memory devices.

Design and synthesis of hyperbranched polyimide containing multi-triphenylamine moieties for memory devices

RSC Advances ◽  
2016 ◽  
Vol 6 (95) ◽  
pp. 93094-93102 ◽  
Author(s):  
Ying Song ◽  
Hongyan Yao ◽  
Yunxia Lv ◽  
Shiyang Zhu ◽  
Shanyou Liu ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Static Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Current Ratio ◽  
Design And Synthesis ◽  
Switch Voltage

A hyperbranched polyimide (HBPI) was synthesized from a designed triamine monomer and the HBPI based memory device presented SRAM (static random access memory) behavior with a low switch voltage and high ON/OFF current ratio.

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