High-performance AlGaN/GaN MIS-HEMT device based on in situ plasma nitriding and low power chemical vapor deposition Si3N4 gate dielectrics
Keyword(s):
1995 ◽
Vol 53
◽
pp. 256-257
Keyword(s):
Keyword(s):
Keyword(s):
1993 ◽
Vol 140
(12)
◽
pp. 3588-3590
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