scholarly journals Optical modulation characteristics of VO2 thin film due to electric field induced phase transition in the FTO/VO2/FTO structure

2015 ◽  
Vol 64 (19) ◽  
pp. 198101
Author(s):  
Hao Ru-Long ◽  
Li Yi ◽  
Liu Fei ◽  
Sun Yao ◽  
Tang Jia-Yin ◽  
...  
Keyword(s):  
Thin Film ◽  
Phase Transition ◽  
Electric Field ◽  
Optical Modulation

scholarly journals Hybridization and Field Driven Phase Transitions in Hexagonally Warped Topological Insulators

SPIN ◽  
2016 ◽  
Vol 06 (02) ◽  
pp. 1640005 ◽  
Author(s):  
Anirudha Menon ◽  
Debashree Chowdhury ◽  
Banasri Basu
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Phase Transition ◽  
Phase Transitions ◽  
Electric Field ◽  
Surface States ◽  
Material Parameters ◽  
Insulator Phase Transition ◽  
Tilted Magnetic Field

In this paper, we discuss the role of material parameters and external field effects on a thin film topological insulator(TI) in the context of quantum phase transition (QPT). First, we consider an in-plane tilted magnetic field and determine the band structure of the surface states as a function of the tilt angle. We show that the presence of either a hybridization term or hexagonal warping or a combination of both leads to a semi-metal to insulator phase transition which is facilitated by their [Formula: see text] symmetry breaking character. We then note that while the introduction of an electric field does not allow for this QPT since it does not break [Formula: see text] symmetry, it can be used in conjunction with a tunneling element to reach a phase transition efficiently. The corresponding critical point is then nontrivially dependent on the electric field, which is pointed out here. Then, we demonstrate that including a hexagonal warping term leads to an immediate [Formula: see text] symmetry violating QPT.

Stark and Zeeman effects on the topological phase and transport properties of topological crystalline insulator thin films

2020 ◽  
Vol 22 (21) ◽  
pp. 12129-12139
Author(s):  
Pham Thi Huong ◽  
Chuong V. Nguyen ◽  
Huynh V. Phuc ◽  
Nguyen N. Hieu ◽  
Bui D. Hoi ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Thin Films ◽  
Phase Transition ◽  
Electric Field ◽  
Transport Properties ◽  
Group Velocity ◽  
Dirac Fermions ◽  
Topological Phase ◽  
Topological Crystalline Insulator

We applied a perpendicular electric field and an in-plane magnetic field to not only tune the Dirac gap of a SnTe(001) thin film and find the phase transition but also to investigate their effects on the group velocity of both massless and massive surface Dirac fermions.

Electric Field Control of the Magnetic Weyl Fermion in an Epitaxial SrRuO 3 (111) Thin Film

2021 ◽  
pp. 2101316
Author(s):  
Weinan Lin ◽  
Liang Liu ◽  
Qing Liu ◽  
Lei Li ◽  
Xinyu Shu ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Field Control ◽  
Weyl Fermion

Preparation and electrical properties of γ form poly(vinylidene fluoride) thin film by vapour deposition in the presence of an electric field

1991 ◽  
Vol 202 (2) ◽  
pp. 213-220 ◽  
Author(s):  
Akiyoshi Takeno ◽  
Norimasa Okui ◽  
Tetsuji Kitoh ◽  
Michiharu Muraoka ◽  
Susumu Umemoto ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Electric Field ◽  
Vapour Deposition ◽  
Vinylidene Fluoride ◽  
Poly Vinylidene Fluoride

scholarly journals Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 327
Author(s):  
Je-Hyuk Kim ◽  
Jun Tae Jang ◽  
Jong-Ho Bae ◽  
Sung-Jin Choi ◽  
Dong Myong Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Oxygen Content ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Electron Trapping ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Drain Side ◽  
Bottom Gate

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical electric field, electron trapping at the drain-side GI layer by hot-carrier injection, hole trapping at the source-side etch-stop layer by impact ionization, and donor-like state creation in the drain-side IGZO layer by a lateral electric field. To accurately analyze each mechanism, the local threshold voltages of the source and drain sides were measured by forward and reverse read-out. By using contour maps of the threshold voltage shift, we investigated which mechanism was dominant in various gate and drain stress voltage pairs. In addition, we investigated the effect of the oxygen content of the IGZO layer on the positive stress-induced threshold voltage shift. For oxygen-rich devices and oxygen-poor devices, the threshold voltage shift as well as the change in the density of states were analyzed.

Optical modulation characteristics of a twin‐guide laser by an electric field

1991 ◽  
Vol 59 (21) ◽  
pp. 2721-2723 ◽  
Author(s):  
E. Yamamoto ◽  
M. Hamada ◽  
K. Suda ◽  
S. Nogiwa ◽  
T. Oki
Keyword(s):  
Electric Field ◽  
Optical Modulation
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