Observation of electric field-assisted phase transition in thin film vanadium oxide in a metal-oxide-semiconductor device geometry

Changhyun Ko; Shriram Ramanathan

doi:10.1063/1.3050464

Observation of electric field-assisted phase transition in thin film vanadium oxide in a metal-oxide-semiconductor device geometry

Applied Physics Letters ◽

10.1063/1.3050464 ◽

2008 ◽

Vol 93 (25) ◽

pp. 252101 ◽

Cited By ~ 92

Author(s):

Changhyun Ko ◽

Shriram Ramanathan

Keyword(s):

Thin Film ◽

Phase Transition ◽

Electric Field ◽

Metal Oxide ◽

Vanadium Oxide ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Device Geometry

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Large-area (64 × 64 array) inkjet-printed high-performance metal oxide bilayer heterojunction thin film transistors and n-metal-oxide-semiconductor (NMOS) inverters

Journal of Material Science and Technology ◽

10.1016/j.jmst.2021.01.003 ◽

2021 ◽

Author(s):

Shuangshuang Shao ◽

Kun Liang ◽

Xinxing Li ◽

Jinfeng Zhang ◽

Chuan Liu ◽

...

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Thin Film Transistors ◽

High Performance ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Large Area

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Analysis of Carrier Mobility in Amorphous Metal-Oxide Semiconductor Thin-Film Transistor using Hall Effect

IEEE Electron Device Letters ◽

10.1109/led.2020.2993268 ◽

2020 ◽

pp. 1-1

Author(s):

Kota Imanishi ◽

Tokiyoshi Matsuda ◽

Mutsumi Kimura

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Hall Effect ◽

Carrier Mobility ◽

Thin Film Transistor ◽

Amorphous Metal ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Thin Film ◽

Amorphous Metal Oxide

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Metal oxide semiconductor based thin film sensor for nitro aromatic explosive detection

International Conference for Convergence for Technology-2014 ◽

10.1109/i2ct.2014.7092345 ◽

2014 ◽

Cited By ~ 1

Author(s):

Mathure Sagar ◽

Rohini Mudhalwadkar ◽

Gaurav Sonar

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Explosive Detection ◽

Film Sensor ◽

Thin Film Sensor ◽

Nitro Aromatic

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Effects of buried oxide on electrical performance of thin-film silicon-on-insulator metal–oxide–semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.369763 ◽

1999 ◽

Vol 85 (7) ◽

pp. 3912-3915 ◽

Cited By ~ 7

Author(s):

Jong-Wook Lee ◽

Min-Rok Oh ◽

Yo-Hwan Koh

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Electrical Performance ◽

Buried Oxide ◽

Effect Transistor

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Preparation and Application to Enzyme Sensor of Temperature-sensitive Metal Oxide Semiconductor Thin Film.

Journal of the Japan Society of Powder and Powder Metallurgy ◽

10.2497/jjspm.47.838 ◽

2000 ◽

Vol 47 (8) ◽

pp. 838-843

Author(s):

Yoshimitsu Yachi ◽

Shigeki Chiba ◽

Hiroshi Osada ◽

Hideo Oka ◽

Kyoshiro Seki

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Sensitive ◽

Enzyme Sensor ◽

Semiconductor Thin Film

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Thin germanium-carbon alloy layers grown directly on silicon for metal-oxide-semiconductor device applications

Applied Physics Letters ◽

10.1063/1.2195008 ◽

2006 ◽

Vol 88 (15) ◽

pp. 152101 ◽

Cited By ~ 15

Author(s):

D. Q. Kelly ◽

I. Wiedmann ◽

J. P. Donnelly ◽

S. V. Joshi ◽

S. Dey ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Device Applications

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Metal oxide semiconductor thin-film transistor backplanes for displays and imaging

MRS Bulletin ◽

10.1557/s43577-021-00228-8 ◽

2022 ◽

Author(s):

Denis Striakhilev ◽

Byung-kyu Park ◽

Shuenn-Jiun Tang

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Thin Film Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Thin Film

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Widefield multifrequency fluorescence lifetime imaging using a two‐tap complementary metal‐oxide semiconductor camera with lateral electric field charge modulators

Journal of Biophotonics ◽

10.1002/jbio.201800223 ◽

2019 ◽

Vol 12 (5) ◽

Cited By ~ 3

Author(s):

Hongtao Chen ◽

Ning Ma ◽

Keiichiro Kagawa ◽

Shoji Kawahito ◽

Michelle Digman ◽

...

Keyword(s):

Electric Field ◽

Metal Oxide ◽

Fluorescence Lifetime ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fluorescence Lifetime Imaging ◽

Lifetime Imaging ◽

Lateral Electric Field

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Defects Induced by Deep Preamorphization and Their Effects on Metal Oxide Semiconductor Device Characteristics

Journal of The Electrochemical Society ◽

10.1149/1.1837523 ◽

1997 ◽

Vol 144 (3) ◽

pp. 1020-1024 ◽

Cited By ~ 6

Author(s):

Masayasu Miyake ◽

Mitsutoshi Takahashi

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor

Scientific Reports ◽

10.1038/s41598-018-24958-z ◽

2018 ◽

Vol 8 (1) ◽

Cited By ~ 5

Author(s):

Toshiki Kanaki ◽

Hiroki Yamasaki ◽

Tomohiro Koyama ◽

Daichi Chiba ◽

Shinobu Ohya ◽

...

Keyword(s):

Electric Field ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Tunneling Magnetoresistance ◽

Current Modulation ◽

Large Current ◽

Effect Transistor

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