scholarly journals Low frequency noise behaviors in the partially depleted silicon-on-insulator device

2015 ◽  
Vol 64 (10) ◽  
pp. 108501
Author(s):  
Wang Kai ◽  
Liu Yuan ◽  
Chen Hai-Bo ◽  
Deng Wan-Ling ◽  
En Yun-Fei ◽  
...  
2015 ◽  
Vol 64 (7) ◽  
pp. 078501
Author(s):  
Liu Yuan ◽  
Chen Hai-Bo ◽  
He Yu-Juan ◽  
Wang Xin ◽  
Yue Long ◽  
...  

2015 ◽  
Vol 242 ◽  
pp. 449-458 ◽  
Author(s):  
Eddy Simoen ◽  
Bogdan Cretu ◽  
Wen Fang ◽  
Marc Aoulaiche ◽  
Jean Marc Routoure ◽  
...  

The principles and application of Generation-Recombination (GR) noise spectroscopy will be outlined and illustrated for the case of traps in Ultra-Thin Buried Oxide Silicon-on-Insulator nMOSFETs and for vertical polycrystalline silicon nMOSFETs. It will be shown that for scaled devices the GR noise is originating from a single defect, giving rise to a so-called Random Telegraph Signal (RTS). Several methods will be described for an accurate extraction of the RTS parameters (amplitude, up and down time constant). It will be demonstrated that besides the deep-level parameters also the position of the trap in the channel can be derived from a numerical modeling of the RTS amplitude.


1994 ◽  
Vol 41 (3) ◽  
pp. 330-339 ◽  
Author(s):  
E. Simoen ◽  
U. Magnusson ◽  
A.L.P. Rotondaro

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