scholarly journals Radiation effects on the low frequency noise in partially depleted silicon on insulator transistors

2015 ◽  
Vol 64 (7) ◽  
pp. 078501
Author(s):  
Liu Yuan ◽  
Chen Hai-Bo ◽  
He Yu-Juan ◽  
Wang Xin ◽  
Yue Long ◽  
...  
Keyword(s):  
Radiation Effects ◽  
Low Frequency ◽  
Silicon On Insulator ◽  
Frequency Noise ◽  
Low Frequency Noise

Radiation Effects and Low-Frequency Noise in AlGaN/GaN HEMTs

2021 ◽  
Author(s):  
Daniel M. Fleetwood ◽  
Ronald D. Schrimpf ◽  
En Xia Zhang ◽  
Sokrates T. Pantelides
Keyword(s):  
Radiation Effects ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Gan Hemts

scholarly journals Low frequency noise behaviors in the partially depleted silicon-on-insulator device

2015 ◽  
Vol 64 (10) ◽  
pp. 108501
Author(s):  
Wang Kai ◽  
Liu Yuan ◽  
Chen Hai-Bo ◽  
Deng Wan-Ling ◽  
En Yun-Fei ◽  
...  
Keyword(s):  
Low Frequency ◽  
Silicon On Insulator ◽  
Frequency Noise ◽  
Low Frequency Noise

scholarly journals Low-Frequency Noise Spectroscopy of Bulk and Border Traps in Nanoscale Devices

2015 ◽  
Vol 242 ◽  
pp. 449-458 ◽  
Author(s):  
Eddy Simoen ◽  
Bogdan Cretu ◽  
Wen Fang ◽  
Marc Aoulaiche ◽  
Jean Marc Routoure ◽  
...  
Keyword(s):  
Numerical Modeling ◽  
Time Constant ◽  
Polycrystalline Silicon ◽  
Deep Level ◽  
Low Frequency ◽  
Silicon On Insulator ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Single Defect ◽  
Noise Spectroscopy

The principles and application of Generation-Recombination (GR) noise spectroscopy will be outlined and illustrated for the case of traps in Ultra-Thin Buried Oxide Silicon-on-Insulator nMOSFETs and for vertical polycrystalline silicon nMOSFETs. It will be shown that for scaled devices the GR noise is originating from a single defect, giving rise to a so-called Random Telegraph Signal (RTS). Several methods will be described for an accurate extraction of the RTS parameters (amplitude, up and down time constant). It will be demonstrated that besides the deep-level parameters also the position of the trap in the channel can be derived from a numerical modeling of the RTS amplitude.

Sign in / Sign up

Export Citation Format

Share Document