scholarly journals Fully tensile strained partial silicon-on-insulator n-type lateral-double-diffused metal-oxide-semiconductor field effect transistor using localized contact etching stop layers

AIP Advances ◽  
2017 ◽  
Vol 7 (5) ◽  
pp. 055308 ◽  
Author(s):  
Xiangzhan Wang ◽  
Changgui Tan ◽  
Xi Zou ◽  
Yi Zhang ◽  
Jianhua Pan ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Effect Transistor

scholarly journals Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field-effect transistor

2003 ◽  
Vol 93 (2) ◽  
pp. 1230-1240 ◽  
Author(s):  
M. D. Croitoru ◽  
V. N. Gladilin ◽  
V. M. Fomin ◽  
J. T. Devreese ◽  
W. Magnus ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Quantum Transport ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Effect Transistor
Sign in / Sign up

Export Citation Format

Share Document