scholarly journals A dual-trench silicon on insulator high voltage device with an L-shaped source field plate

2014 ◽  
Vol 63 (23) ◽  
pp. 237305
Author(s):  
Shi Yan-Mei ◽  
Liu Ji-Zhi ◽  
Yao Su-Ying ◽  
Ding Yan-Hong ◽  
Zhang Wei-Hua ◽  
...  
Keyword(s):  
High Voltage ◽  
Silicon On Insulator ◽  
Field Plate ◽  
Source Field

High-voltage planar devices using field plate and semi-resistive layers

1991 ◽  
Vol 38 (7) ◽  
pp. 1681-1684 ◽  
Author(s):  
D. Jaume ◽  
G. Charitat ◽  
J.M. Reynes ◽  
P. Rossel
Keyword(s):  
High Voltage ◽  
Field Plate

Study of HfAlO/AlGaN/GaN MOS-HEMT with source field plate structure for improved breakdown voltage

2014 ◽  
Vol 64 ◽  
pp. 152-157 ◽  
Author(s):  
Sarosij Adak ◽  
Sanjit Kumar Swain ◽  
Avtar Singh ◽  
Hemant Pardeshi ◽  
Sudhansu Kumar Pati ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Plate Structure ◽  
Field Plate ◽  
Source Field

scholarly journals A UNIVERSAL SOI-BASED HIGH TEMPERATURE GATE DRIVER INTEGRATED CIRCUIT FOR SiC POWER SWITCHES WITH ON-CHIP SHORT CIRCUIT PROTECTION

2011 ◽  
Vol 20 (03) ◽  
pp. 471-484 ◽  
Author(s):  
LIANG ZUO ◽  
ROBERT GREENWELL ◽  
SYED K. ISLAM ◽  
M. A. HUQUE ◽  
BENJAMIN J. BLALOCK ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Integrated Circuit ◽  
Heat Sink ◽  
Low Cost ◽  
Short Circuit ◽  
Silicon On Insulator ◽  
Successful Operation ◽  
Power Switches ◽  
Gate Driver

In recent years, increasing demand for hybrid electric vehicles (HEVs) has generated the need for reliable and low-cost high-temperature electronics which can operate at the high temperatures under the hood of these vehicles. A high-voltage and high temperature gate-driver integrated circuit for SiC FET switches with short circuit protection has been designed and implemented in a 0.8-micron silicon-on-insulator (SOI) high-voltage process. The prototype chip has been successfully tested up to 200°C ambient temperature without any heat sink or cooling mechanism. This gate-driver chip can drive SiC power FETs of the DC-DC converters in a HEV, and future chip modifications will allow it to drive the SiC power FETs of the traction drive inverter. The converter modules along with the gate-driver chip will be placed very close to the engine where the temperature can reach up to 175ΰC. Successful operation of the chip at this temperature with or without minimal heat sink and without liquid cooling will help achieve greater power-to-volume as well as power-to-weight ratios for the power electronics module.

scholarly journals Numerical investigation on L-shaped vertical field plate in high-voltage LDMOS

2019 ◽  
Vol 15 ◽  
pp. 102547
Author(s):  
Yue Hu ◽  
Zhifeng Liu ◽  
Shichang Chen ◽  
Jing Wang ◽  
Wen-Sheng Zhao ◽  
...  
Keyword(s):  
Numerical Investigation ◽  
High Voltage ◽  
Field Plate ◽  
Vertical Field

An 800 volts high voltage interconnection level shifter using Floating Poly Field Plate (FPFP) method

2010 ◽  
Author(s):  
R O Sihombing ◽  
Gene Sheu ◽  
Shao-Ming Yang ◽  
H S Wasisto ◽  
Yu-Feng Guo ◽  
...  
Keyword(s):  
High Voltage ◽  
Field Plate ◽  
Level Shifter

Enhancement of RF Characteristics of AlGaN/GaN HEMTs with Shield Source Field Plate using BCB

2012 ◽  
Author(s):  
M. Lee ◽  
Y. M. Ryoo ◽  
N. Lee ◽  
H. Y. Cha ◽  
K. Seo
Keyword(s):  
Field Plate ◽  
Source Field ◽  
Gan Hemts
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