Study of HfAlO/AlGaN/GaN MOS-HEMT with source field plate structure for improved breakdown voltage

2014 ◽  
Vol 64 ◽  
pp. 152-157 ◽  
Author(s):  
Sarosij Adak ◽  
Sanjit Kumar Swain ◽  
Avtar Singh ◽  
Hemant Pardeshi ◽  
Sudhansu Kumar Pati ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Plate Structure ◽  
Field Plate ◽  
Source Field

Millimeter-wave AlGaN/GaN HEMTs breakdown voltage enhancement by an air-bridge recessed source field plate (RSFP)

2019 ◽  
Vol 160 ◽  
pp. 107629 ◽  
Author(s):  
S. Zhang ◽  
K. Wei ◽  
X.H. Ma ◽  
Y.C. Zhang ◽  
M. Asif ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Breakdown Voltage ◽  
Field Plate ◽  
Source Field ◽  
Gan Hemts

Design and Demonstration of High Breakdown Voltage GaN-HEMT using Field Plate Structure for Power Electronics Applications

2003 ◽  
Author(s):  
Wataru Saito ◽  
Yoshiharu Takada ◽  
Masahiko Kuraguchi ◽  
Kunio Tsuda ◽  
Ichiro Omura ◽  
...  
Keyword(s):  
Power Electronics ◽  
Breakdown Voltage ◽  
Plate Structure ◽  
Field Plate ◽  
Gan Hemt ◽  
High Breakdown Voltage

High Power AlGaN/GaN Schottky Barrier Diode with 1000 V Operation

2005 ◽  
Vol 892 ◽  
Author(s):  
Seikoh Yoshida ◽  
Nariaki Ikeda ◽  
Jiang Li ◽  
Takahiro Wada ◽  
Hiroshi Kambayashi ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Chemical Vapor ◽  
Schottky Barrier Diode ◽  
Plasma Chemical Vapor Deposition ◽  
Plate Structure ◽  
Field Plate ◽  
High Breakdown Voltage ◽  
Current Voltage ◽  
Gan Heterostructure

AbstractWe investigated an AlGaN/GaN Schottky barrier diode (SBD) with a field plate structure for a high breakdown voltage. The AlGaN/GaN heterostructure was grown by MOCVD. The AlGaN buffer was grown on the Si (111) substrate and Al0.25Ga0.75N (25 nm)/ GaN (1000 nm) was grown on the buffer layer. The AlGaN/GaN heterostructure without any crack was obtained. After that, a Schottky barrier diode was fabricated using an AlGaN/GaN heterostructure. In order to obtain a high breakdown voltage, a gate field plate structure was used. SiO2 was formed on the AlGaN layer using a plasma chemical vapor deposition. The Schottky electrode of Ni/Au was partially deposited on the SiO2 film towards the ohmic region. The length of field plate structure was also changed to investigate the effect. Ti/Al-silicide was used for an ohmic electrode of SBD. The contact resistance of ohmic electrodes was 8E-6 ohmcm2.The current-voltage characteristics of an AlGaN/GaN SBD were measured. The reverse breakdown voltage of the diode was also over 1000 V and the reverse leakage current was below 1.5E-6 A/mm.

Diamond Vertical Schottky Barrier Diode with Al2O3 Field Plate

2012 ◽  
Vol 717-720 ◽  
pp. 1319-1321 ◽  
Author(s):  
Hitoshi Umezawa ◽  
Masanori Nagase ◽  
Yukako Kato ◽  
Shinichi Shikata
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Schottky Barrier Diode ◽  
Plate Structure ◽  
Field Plate ◽  
Low Leakage ◽  
Leakage Characteristics

A field-plate structure is applied to vertical diamond Schottky barrier diode. A sputtered Al2O3 with 0.2 µm thickness is utilized for field-plate insulator. Fabricated diamond VSBD shows low leakage characteristics. Accordingly, the breakdown voltage is improved from 900V to 1,800V.

A Study of Oxide Etch Angle of Edge Termination Field Plate for Fabrication of SiC SBD

2017 ◽  
Vol 730 ◽  
pp. 102-105
Author(s):  
Ey Goo Kang
Keyword(s):  
Thermal Conductivity ◽  
Silicon Carbide ◽  
Breakdown Voltage ◽  
Dielectric Breakdown ◽  
Power Semiconductor ◽  
Field Plate ◽  
Edge Termination ◽  
Power Semiconductor Devices ◽  
Silicon Materials ◽  
Generation Power

The silicon carbide (SiC) material is being spotlighted as a next-generation power semiconductor material due to the characteristic limitations of the existing silicon materials. SiC has a wider band gap, higher breakdown voltage, higher thermal conductivity, and higher saturation electron mobility than Si. However, actual SiC SBDs exhibit a lower dielectric breakdown voltage than the theoretical breakdown voltage that causes the electric field concentration, a phenomenon that occurs on the edge of the contact surface as in the conventional power semiconductor devices. In this paper, we designed an edge termination structure using a field plate structure through oxide etch angle control, and optimized the structure to obtain a high breakdown voltage. The experiment results indicated that oxide etch angle was 45° when the breakdown voltage characteristics of the SiC SBD were optimized and a breakdown voltage of 681V was obtained.

Sign in / Sign up

Export Citation Format

Share Document