scholarly journals Effect of oxygen implantation on microstructural and optical properties of ZnTe:O intermediate-band photovoltaic materials

2014 ◽  
Vol 63 (23) ◽  
pp. 237103
Author(s):  
Zhen Kang ◽  
Gu Ran ◽  
Ye Jian-Dong ◽  
Gu Shu-Lin ◽  
Ren Fang-Fang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Intermediate Band ◽  
Oxygen Implantation ◽  
Photovoltaic Materials ◽  
Effect Of Oxygen

Effect of oxygen implantation on the characteristic of Ge2Sb2Te5 phase change film

2004 ◽  
Author(s):  
Bo Liu ◽  
Zhitang Song ◽  
Ting Zhang ◽  
Songlin Feng ◽  
Bomy Chen
Keyword(s):  
Phase Change ◽  
Oxygen Implantation ◽  
Effect Of Oxygen

scholarly journals The Effect of Carbon Defects in the Coal–Pyrite Vacancy on the Electronic Structure and Optical Properties: A DFT + U Study

Minerals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 815
Author(s):  
Wei Cheng ◽  
Chen Cheng ◽  
Baolin Ke
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Absorption Coefficient ◽  
Light Absorption ◽  
Density Functional ◽  
Doping Concentration ◽  
Carbon Doping ◽  
Photovoltaic Materials ◽  
Light Absorption Coefficient ◽  
Carbon Impurities

Pyrite is a mineral often associated with coal in coal seams and is a major source of sulfur in coal. Coal–pyrite is widely distributed, easily available, low-cost, and non-toxic, and has high light absorption coefficient. So, it shows potential for various applications. In this paper, the density-functional theory (DFT + U) is used to construct coal–pyrite with carbon doped in the sulfur and iron vacancies of pyrite. The effects of different carbon defects, different carbon doping concentrations, and different doping distributions in the same concentration on the electronic structure and optical properties of coal–pyrite were studied. The results show that the absorption coefficient and reflectivity of coal–pyrite, when its carbon atom substitutes the iron and sulfur atoms in the sulfur and iron vacancies, are significantly higher than those of the perfect pyrite, indicating that coal–pyrite has potential for application in the field of photovoltaic materials. When carbon is doped in the sulfur vacancy, this impurity state reduces the width of the forbidden band; with the increase in the doping concentration, the width of the forbidden band decreases and the visible-light absorption coefficient increases. The distribution of carbon impurities impacts the band gap but has almost no effect on the light absorption coefficient, complex dielectric function, and reflectivity, indicating that the application of coal–pyrite to photovoltaic materials should mainly consider the carbon doping concentration instead of the distribution of carbon impurities. The research results provide a theoretical reference for the application of coal–pyrite in the field of photoelectric materials.

scholarly journals Effect of Oxygen Implantation on the Electrochemical Properties of Iron Surface Layers.

1992 ◽  
Vol 43 (12) ◽  
pp. 1146-1150
Author(s):  
Takanobu FUJIHANA ◽  
Yoshio OKABE ◽  
Katsuo TAKAHASHI ◽  
Masaya IWAKI
Keyword(s):  
Electrochemical Properties ◽  
Iron Surface ◽  
Surface Layers ◽  
Oxygen Implantation ◽  
Effect Of Oxygen

Synthesis and optical properties of photovoltaic materials based on the ambipolar dithienonaphthothiadiazole unit

2015 ◽  
Vol 3 (8) ◽  
pp. 4229-4238 ◽  
Author(s):  
Tatsuaki Nakanishi ◽  
Yasuhiro Shirai ◽  
Liyuan Han
Keyword(s):  
Optical Properties ◽  
Photovoltaic Materials

Dithieno[3′2′:5,6;2′′,3′′:7,8]naphtho[2,3-c][1,2,5]thiadiazole (DTNT) was designed to control the band energies of the polymers for photovoltaic materials.

scholarly journals Process-Parameter-Dependent Structural, Electrical, and Optical Properties of Reactive Magnetron Sputtered Ag-Cu-O Films

2011 ◽  
Vol 2011 ◽  
pp. 1-8 ◽  
Author(s):  
P. Narayana Reddy ◽  
A. Sreedhar ◽  
M. Hari Prasad Reddy ◽  
S. Uthanna ◽  
J. F. Pierson
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Rf Magnetron Sputtering ◽  
Low Oxygen ◽  
Electrical And Optical Properties ◽  
Partial Pressures ◽  
Effect Of Oxygen ◽  
Parameter Dependent

Silver-copper-oxide thin films were formed by RF magnetron sputtering technique using Ag80Cu20target at various oxygen partial pressures in the range 5 × 10−3–8 ×10−2 Pa and substrate temperatures in the range 303–523 K. The effect of oxygen partial pressure and substrate temperature on the structure and surface morphology and electrical and optical properties of the films were studied. The Ag-Cu-O films formed at room temperature (303 K) and at low oxygen partial pressure of 5 × 10−3 Pa were mixed phase of Ag2Cu2O3and Ag, while those deposited at 2 × 10−2 Pa were composed of Ag2Cu2O4and Ag2Cu2O3phases. The crystallinity of the films formed at oxygen partial pressure of 2 × 10−2Pa increased with the increase of substrate temperature from 303 to 423 K. Further increase of substrate temperature to 523 K, the films were decomposed in to Ag2O and Ag phases. The electrical resistivity of the films decreased from 0.8 Ωcm with the increase of substrate temperature from 303 to 473 K due to improvement in the crystallinity of the phase. The optical band gap of the Ag-Cu-O films increased from 1.47 to 1.83 eV with the increase of substrate temperature from 303 to 473 K.

Effect of Oxygen Implantation Conditions on Buried Si02 Layer Formation using a Multiple Step Process

1989 ◽  
Vol 157 ◽  
Author(s):  
F. Namavar ◽  
E. Cortesi ◽  
R.F. Pinizzotto ◽  
H. Yang
Keyword(s):  
Low Dose ◽  
Layer Formation ◽  
Reduced Dose ◽  
Oxygen Implantation ◽  
Implantation Temperature ◽  
Implantation Process ◽  
Effect Of Oxygen ◽  
Radiation Hard ◽  
Dose Step ◽  
Multiple Step

ABSTRACTWe have studied the effect of implantation temperature, dose step, and total dose on the buried Si02 layer formed with a multiple low dose oxygen implantation process. Furthermore, we have produced a continuous, high quality buried SiO2 layer about 1500 Å thick with a dose of only 7 × 1017 0+/cm2 at 160 keV. The thin SiO2 layer is important not only because of the possible economic advantages of reduced dose, but also because a thinner oxide layer is more radiation hard.

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