Effect of oxygen implantation on the characteristic of Ge2Sb2Te5 phase change film

2004 ◽  
Author(s):  
Bo Liu ◽  
Zhitang Song ◽  
Ting Zhang ◽  
Songlin Feng ◽  
Bomy Chen
Keyword(s):  
Phase Change ◽  
Oxygen Implantation ◽  
Effect Of Oxygen

scholarly journals Effect of Oxygen Implantation on the Electrochemical Properties of Iron Surface Layers.

1992 ◽  
Vol 43 (12) ◽  
pp. 1146-1150
Author(s):  
Takanobu FUJIHANA ◽  
Yoshio OKABE ◽  
Katsuo TAKAHASHI ◽  
Masaya IWAKI
Keyword(s):  
Electrochemical Properties ◽  
Iron Surface ◽  
Surface Layers ◽  
Oxygen Implantation ◽  
Effect Of Oxygen

The Phase Change Effect of Oxygen-Incorporation in GeSbTe Films

2011 ◽  
Vol 158 (5) ◽  
pp. H471 ◽  
Author(s):  
Moon Hyung Jang ◽  
Seung Jong Park ◽  
Dong Hyeok Lim ◽  
Sung Jin Park ◽  
Mann-Ho Cho ◽  
...  
Keyword(s):  
Phase Change ◽  
Oxygen Incorporation ◽  
Change Effect ◽  
Effect Of Oxygen

Effect of Oxygen Implantation Conditions on Buried Si02 Layer Formation using a Multiple Step Process

1989 ◽  
Vol 157 ◽  
Author(s):  
F. Namavar ◽  
E. Cortesi ◽  
R.F. Pinizzotto ◽  
H. Yang
Keyword(s):  
Low Dose ◽  
Layer Formation ◽  
Reduced Dose ◽  
Oxygen Implantation ◽  
Implantation Temperature ◽  
Implantation Process ◽  
Effect Of Oxygen ◽  
Radiation Hard ◽  
Dose Step ◽  
Multiple Step

ABSTRACTWe have studied the effect of implantation temperature, dose step, and total dose on the buried Si02 layer formed with a multiple low dose oxygen implantation process. Furthermore, we have produced a continuous, high quality buried SiO2 layer about 1500 Å thick with a dose of only 7 × 1017 0+/cm2 at 160 keV. The thin SiO2 layer is important not only because of the possible economic advantages of reduced dose, but also because a thinner oxide layer is more radiation hard.

Effect of oxygen implantation on ionoluminescence of porous silicon

1998 ◽  
Vol 80 (1-4) ◽  
pp. 187-192 ◽  
Author(s):  
J. Żuk ◽  
T.J. Ochalski ◽  
M. Kulik ◽  
J. Liśkiewicz ◽  
A.P. Kobzev
Keyword(s):  
Porous Silicon ◽  
Oxygen Implantation ◽  
Effect Of Oxygen

The effect of oxygen plasma ashing on the resistance of TiN bottom electrode for phase change memory

2015 ◽  
Vol 36 (5) ◽  
pp. 056001 ◽  
Author(s):  
Dan Gao ◽  
Bo Liu ◽  
Ying Li ◽  
Zhitang Song ◽  
Wanchun Ren ◽  
...  
Keyword(s):  
Phase Change ◽  
Oxygen Plasma ◽  
Bottom Electrode ◽  
Phase Change Memory ◽  
Effect Of Oxygen ◽  
Change Memory

Effect of oxygen implantation and adsorption on the emission characteristics of single-crystalline molybdenum

Atomic Energy ◽  
1993 ◽  
Vol 75 (5) ◽  
pp. 885-888
Author(s):  
S. S. Gerashchenko ◽  
M. I. Guseva ◽  
V. A. Koryukin ◽  
V. P. Obrezumov
Keyword(s):  
Emission Characteristics ◽  
Single Crystalline ◽  
Oxygen Implantation ◽  
Effect Of Oxygen

The effect of oxygen implantation on the corrosion and electrochemical properties of iron

2016 ◽  
Vol 52 (7) ◽  
pp. 1121-1127
Author(s):  
S. M. Reshetnikov ◽  
F. Z. Gil’mutdinov ◽  
E. M. Borisova ◽  
O. R. Bakieva
Keyword(s):  
Electrochemical Properties ◽  
Oxygen Implantation ◽  
Effect Of Oxygen
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