scholarly journals Research on SRAM functional failure mode induced by total ionizing dose irradiation

2013 ◽  
Vol 62 (11) ◽  
pp. 116101
Author(s):  
Zheng Qi-Wen ◽  
Yu Xue-Feng ◽  
Cui Jiang-Wei ◽  
Guo Qi ◽  
Ren Di-Yuan ◽  
...  
Keyword(s):  
Failure Mode ◽  
Total Ionizing Dose ◽  
Functional Failure ◽  
Dose Irradiation

Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation

2015 ◽  
Vol 24 (10) ◽  
pp. 106106 ◽  
Author(s):  
Qi-Wen Zheng ◽  
Jiang-Wei Cui ◽  
Hang Zhou ◽  
De-Zhao Yu ◽  
Xue-Feng Yu ◽  
...  
Keyword(s):  
Total Dose ◽  
Failure Mode ◽  
Functional Failure ◽  
Dose Irradiation

Total-Ionizing-Dose Irradiation-Induced Dielectric Field Enhancement for High-Voltage SOI LDMOS

2019 ◽  
Vol 40 (4) ◽  
pp. 593-596 ◽  
Author(s):  
Xin Zhou ◽  
Zhangyi'an Yuan ◽  
Lei Shu ◽  
Ming Qiao ◽  
Zhenlin Lu ◽  
...  
Keyword(s):  
High Voltage ◽  
Field Enhancement ◽  
Total Ionizing Dose ◽  
Dose Irradiation

Effects of Total-Ionizing-Dose Irradiation on Single-Event Response for Flip-Flop Designs at a 14-/16-nm Bulk FinFET Technology Node

2018 ◽  
Vol 65 (8) ◽  
pp. 1928-1934 ◽  
Author(s):  
H. Zhang ◽  
H. Jiang ◽  
X. Fan ◽  
J. S. Kauppila ◽  
I. Chatterjee ◽  
...  
Keyword(s):  
Single Event ◽  
Total Ionizing Dose ◽  
Flip Flop ◽  
Technology Node ◽  
Dose Irradiation ◽  
Event Response

Effects of Total-Ionizing-Dose Irradiation on SEU- and SET-Induced Soft Errors in Bulk 40-nm Sequential Circuits

2017 ◽  
Vol 64 (1) ◽  
pp. 471-476 ◽  
Author(s):  
R. M. Chen ◽  
Z. J. Diggins ◽  
N. N. Mahatme ◽  
L. Wang ◽  
E. X. Zhang ◽  
...  
Keyword(s):  
Soft Errors ◽  
Sequential Circuits ◽  
Total Ionizing Dose ◽  
Dose Irradiation

Influence of Total Ionizing Dose Irradiation on Low-Frequency Noise Responses in Partially Depleted SOI nMOSFETs

2017 ◽  
Vol 34 (11) ◽  
pp. 118501
Author(s):  
Chao Peng ◽  
Yun-Fei En ◽  
Zhi-Feng Lei ◽  
Yi-Qiang Chen ◽  
Yuan Liu ◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Total Ionizing Dose ◽  
Dose Irradiation

Link Between Function-Flow Failure Rates and Failure Modes for Early Design Stage Reliability Analysis

2011 ◽  
Author(s):  
Bryan M. O’Halloran ◽  
Robert B. Stone ◽  
Irem Y. Tumer
Keyword(s):  
Failure Mode ◽  
Failure Modes ◽  
Design Method ◽  
Design Stage ◽  
Failure Rates ◽  
High Likelihood ◽  
Functional Failure ◽  
Early Design Stage ◽  
Flow Failure ◽  
Rate Design

This scope of this paper is to provide an extension to the Function Failure Design Method (FFDM). We first implement a more robust knowledge base using Failure Mode/Mechanism Distributions 1997 (FMD-97). Then failure rates from Nonelectric Parts Reliability Data (NPRD-95) are added to more effectively determine the likelihood that a failure mode will occur. The proposed Functional Failure Rate Design Method (FFRDM) uses functional inputs to effectively offer recommendations to mitigate failure modes that have a high likelihood of occurrence. This work uses a past example where FFDM and Failure Modes and Effects Analysis (FMEA) were compared to show that improvements have been made. A four step process is presented to show how the FFRDM is used during conceptual design.

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