scholarly journals Experimental investigation on open-circuit voltage of InGaP/InGaAs/Ge triple-junction solar cell influenced by the vibration direction of the electric vector of linearly polarized light

2012 ◽  
Vol 61 (10) ◽  
pp. 108802
Author(s):  
Xiao Wen-Bo ◽  
He Xing-Dao ◽  
Gao Yi-Qing
Keyword(s):  
Experimental Investigation ◽  
Solar Cell ◽  
Triple Junction ◽  
Open Circuit Voltage ◽  
Polarized Light ◽  
Open Circuit ◽  
Electric Vector ◽  
Vibration Direction ◽  
Junction Solar Cell ◽  
Linearly Polarized

scholarly journals GaInP/GaAs/poly-Si Multi-Junction Solar Cells by in Metal Balls Bonding

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 726
Author(s):  
Ray-Hua Horng ◽  
Yu-Cheng Kao ◽  
Apoorva Sood ◽  
Po-Liang Liu ◽  
Wei-Cheng Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Low Temperature ◽  
Triple Junction ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Metal Line ◽  
Solar Simulator ◽  
Junction Solar Cell

In this study, a mechanical stacking technique has been used to bond together the GaInP/GaAs and poly-silicon (Si) solar wafers. A GaInP/GaAs/poly-Si triple-junction solar cell has mechanically stacked using a low-temperature bonding process which involves micro metal In balls on a metal line using a high-optical-transmission spin-coated glue material. Current–voltage measurements of the GaInP/GaAs/poly-Si triple-junction solar cells have carried out at room temperature both in the dark and under 1 sun with 100 mW/cm2 power density using a solar simulator. The GaInP/GaAs/poly-Si triple-junction solar cell has reached an efficiency of 24.5% with an open-circuit voltage of 2.68 V, a short-circuit current density of 12.39 mA/cm2, and a fill-factor of 73.8%. This study demonstrates a great potential for the low-temperature micro-metal-ball mechanical stacking technique to achieve high conversion efficiency for solar cells with three or more junctions.

The Improvement of Solar Cell Output Power Using Cooling and Reflection from Mirror

2017 ◽  
Vol 8 (3) ◽  
pp. 1320
Author(s):  
Budiyanto Budiyanto ◽  
Fadliondi Fadliondi
Keyword(s):  
Experimental Investigation ◽  
Solar Cell ◽  
Output Power ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Maximum Power ◽  
Light Reflection

This paper explains the experimental investigation to improve the output power of solar cell using cooling and light reflection from mirrors. The results show that by adding mirror, the current and output power of solar cell increase but the open circuit voltage and maximum power voltage decrease due to heat. By adding cooling, the open circuit voltage and the maximum power voltage are improved, so the output power also increases.

A high efficiency solution processed polymer inverted triple-junction solar cell exhibiting a power conversion efficiency of 11.83%

2015 ◽  
Vol 8 (1) ◽  
pp. 303-316 ◽  
Author(s):  
Abd. Rashid bin Mohd Yusoff ◽  
Dongcheon Kim ◽  
Hyeong Pil Kim ◽  
Fabio Kurt Shneider ◽  
Wilson Jose da Silva ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Power Conversion Efficiency ◽  
Conversion Efficiency ◽  
Triple Junction ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Power Conversion ◽  
Open Circuit ◽  
Tandem Solar Cells

We propose that 1 + 1 + 1 triple-junction solar cells can provide an increased efficiency, as well as a higher open circuit voltage, compared to tandem solar cells.

scholarly journals Effect of p-Layer and i-Layer Properties on the Electrical Behaviour of Advanced a-Si:H/a-SiGe:H Thin Film Solar Cell from Numerical Modeling Prospect

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Peyman Jelodarian ◽  
Abdolnabi Kosarian
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Current Density ◽  
Doping Concentration ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Maximum Efficiency ◽  
Junction Solar Cell ◽  
Double Junction

The effect of p-layer and i-layer characteristics such as thickness and doping concentration on the electrical behaviors of the a-Si:H/a-SiGe:H thin film heterostructure solar cells such as electric field, photogeneration rate, and recombination rate through the cell is investigated. Introducing Ge atoms to the Si lattice in Si-based solar cells is an effective approach in improving their characteristics. In particular, current density of the cell can be enhanced without deteriorating its open-circuit voltage. Optimization shows that for an appropriate Ge concentration, the efficiency of a-Si:H/a-SiGe solar cell is improved by about 6% compared with the traditional a-Si:H solar cell. This work presents a novel numerical evaluation and optimization of amorphous silicon double-junction (a-Si:H/a-SiGe:H) thin film solar cells and focuses on optimization of a-SiGe:H midgap single-junction solar cell based on the optimization of the doping concentration of the p-layer, thicknesses of the p-layer and i-layer, and Ge content in the film. Maximum efficiency of 23.5%, with short-circuit current density of 267 A/m2and open-circuit voltage of 1.13 V for double-junction solar cell has been achieved.

Nonlinear Response of Si-Based Solar Cells in Linearly Polarized Light under Low Illumination

2013 ◽  
Vol 291-294 ◽  
pp. 18-21
Author(s):  
Q. Wang ◽  
X.D. He ◽  
W.B. Xiao
Keyword(s):  
Solar Cells ◽  
Light Intensity ◽  
Angular Dependence ◽  
Open Circuit Voltage ◽  
Polarized Light ◽  
Nonlinear Effects ◽  
Open Circuit ◽  
Photovoltaic System ◽  
Linearly Polarized ◽  
Low Illumination

The linearly polarization photosensitivity of Si-based solar cells has been investigated. It has been shown that the angular dependence of the open-circuit voltage and light intensity are observed similar change trend. However, a contrary behavior is reported in the angular dependence of the ratio between the open-circuit voltage and polarized light intensity. Through the establishment of a theoretical model and detailed analysis, it is found that the nonlinear effects play a crucial role in the photovoltage responses of solar cells under low illumination. The angular dependence of the ratio of the open-circuit voltage to the light intensity is inversely proportional to the square of the cosine function. This work is very significant for the photovoltaic system research.

scholarly journals Damp-Heat Induced Performance Degradation for InGaP/GaAs/Ge Triple-Junction Solar Cell

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Hwen-Fen Hong ◽  
Tsung-Shiew Huang ◽  
Wu-Yih Uen ◽  
Yen-Yeh Chen
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Triple Junction ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Energy Conversion Efficiency ◽  
Open Circuit

We performed accelerated tests on sealed and nonsealed InGaP/InGaAs/Ge triple-junction (TJ) solar cells in a complex high temperature and high humidity environment and investigated the electrical properties over time. The degradation of energy conversion efficiency in nonsealed cells was found to be more serious than that in sealed cells. The short-circuit current (ISC), open-circuit voltage (VOC), and fill factor (FF) of sealed cells changed very slightly, though the conversion efficiency decreased 3.6% over 500 h of exposure. This decrease of conversion efficiency was suggested to be due to the deterioration of silicone encapsulant. TheISC,VOC, and FF of nonsealed cells decreased with increasing exposure time. By EL and SEM analysis, the root causes of degradation can be attributed to the damage and cracks near the edge of cells induced by the moisture ingress. It resulted in shunt paths that lead to a deterioration of the conversion efficiency of solar cell by increasing the leakage current, as well as decreasing open-circuit voltage and fill factor of nonsealed solar cells.

Measurement of the Open-Circuit Voltage of Individual Subcells in a Dual-Junction Solar Cell

2012 ◽  
Vol 2 (2) ◽  
pp. 164-168 ◽  
Author(s):  
J. Holovský ◽  
M. Bonnet-Eymard ◽  
G. Bugnon ◽  
P. Cuony ◽  
M. Despeisse ◽  
...  
Keyword(s):  
Solar Cell ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Junction Solar Cell

The Effect of Concentrated Light Intensity on Temperature Coefficient of the InGaP/InGaAs/Ge Triple-Junction Solar Cell

2015 ◽  
Vol 8 (1) ◽  
pp. 106-111 ◽  
Author(s):  
Zilong Wang ◽  
Hua Zhang ◽  
Wei Zhao ◽  
Zhigang Zhou ◽  
Mengxun Chen
Keyword(s):  
Solar Cell ◽  
Light Intensity ◽  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Triple Junction ◽  
Concentration Ratio ◽  
Crystalline Silicon ◽  
Photovoltaic System ◽  
Solar Pv ◽  
Junction Solar Cell

Research on automatic tracking solar concentrator photovoltaic systems has gained increasing attention in developing the solar PV technology. A paraboloidal concentrator with secondary optic is developed for a three-junction GaInP/GalnAs/Ge solar cell. The concentration ratio of this system is 200 and the photovoltaic cell is cooled by the heat pipe. A detailed analysis on the temperature coefficient influence factors of triple-junction solar cell under different high concentrations (75X, 100X, 125X, 150X, 175X and 200X) has been conducted based on the dish-style concentration photovoltaic system. The results show that under high concentrated light intensity, the temperature coefficient of Voc of triple-junction solar cell is increasing as the concentration ratio increases, from -10.84 mV/°C @ 75X growth to -4.73mV/°C @ 200X. At low concentration, the temperature coefficient of Voc increases rapidly, and then increases slowly as the concentration ratio increases. The temperature dependence of η increased from -0.346%/°C @ 75X growth to - 0.103%/°C @ 200X and the temperature dependence of Pmm and FF increased from -0.125 W/°C, -0.35%/°C @ 75X growth to -0.048W/°C, -0.076%/°C @ 200X respectively. It indicated that the temperature coefficient of three-junction GaInP/GalnAs/Ge solar cell is better than that of crystalline silicon cell array under concentrating light intensity.

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