scholarly journals Effect of p-Layer and i-Layer Properties on the Electrical Behaviour of Advanced a-Si:H/a-SiGe:H Thin Film Solar Cell from Numerical Modeling Prospect

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Peyman Jelodarian ◽  
Abdolnabi Kosarian
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Current Density ◽  
Doping Concentration ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Maximum Efficiency ◽  
Junction Solar Cell ◽  
Double Junction

The effect of p-layer and i-layer characteristics such as thickness and doping concentration on the electrical behaviors of the a-Si:H/a-SiGe:H thin film heterostructure solar cells such as electric field, photogeneration rate, and recombination rate through the cell is investigated. Introducing Ge atoms to the Si lattice in Si-based solar cells is an effective approach in improving their characteristics. In particular, current density of the cell can be enhanced without deteriorating its open-circuit voltage. Optimization shows that for an appropriate Ge concentration, the efficiency of a-Si:H/a-SiGe solar cell is improved by about 6% compared with the traditional a-Si:H solar cell. This work presents a novel numerical evaluation and optimization of amorphous silicon double-junction (a-Si:H/a-SiGe:H) thin film solar cells and focuses on optimization of a-SiGe:H midgap single-junction solar cell based on the optimization of the doping concentration of the p-layer, thicknesses of the p-layer and i-layer, and Ge content in the film. Maximum efficiency of 23.5%, with short-circuit current density of 267 A/m2and open-circuit voltage of 1.13 V for double-junction solar cell has been achieved.

High efficiency and high open-circuit voltage quadruple-junction silicon thin film solar cells for future electronic applications

2017 ◽  
Vol 10 (5) ◽  
pp. 1134-1141 ◽  
Author(s):  
Bofei Liu ◽  
Lisha Bai ◽  
Tiantian Li ◽  
Changchun Wei ◽  
Baozhang Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Thin Film Solar Cells ◽  
Silicon Thin Film ◽  
Silicon Based

A highly efficient quadruple-junction silicon based thin-film solar cell with a remarkably high open-circuit voltage was demonstrated to inspire functional photoelectrical devices for environmental applications.

scholarly journals Suppression of Edge Recombination in InAs/InGaAs DWELL Solar Cells

2009 ◽  
Vol 1210 ◽  
Author(s):  
Tingyi Gu ◽  
Mohamed A El-Emawy ◽  
Kai Yang ◽  
Andreas Atintz ◽  
Luke F Lester
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Quantum Wells ◽  
Current Density ◽  
Open Circuit Voltage ◽  
Control Cell ◽  
Lateral Diffusion ◽  
Open Circuit ◽  
Constant Current ◽  
Short Current Density

AbstractThe InAs/InGaAs DWELL solar cell grown by MBE is a standard pin diode structure with six layers of InAs QDs embedded in InGaAs quantum wells placed within a 200-nm intrinsic GaAs region. The GaAs control wafer consists of the same pin configuration but without the DWELL structure. The typical DWELL solar cell exhibits higher short current density while maintaining nearly the same open-circuit voltage for different scales, and the advantage of higher short current density is more obvious in the smaller cells. In contrast, the smaller size cells, which have a higher perimeter to area ratio, make edge recombination current dominant in the GaAs control cells, and thus their open circuit voltage and efficiency severely degrade. The open-circuit voltage and efficiency under AM1.5G of the GaAs control cell decrease from 0.914V and 8.85% to 0.834V and 7.41%, respectively, as the size shrinks from 5*5mm2 to 2*2mm2, compared to the increase from 0.665V and 7.04% to 0.675V and 8.17%, respectively, in the DWELL solar cells. The lower open-circuit voltage in the smaller GaAs control cells is caused by strong Shockley-Read-Hall (SRH) recombination on the perimeter, which leads to a shoulder in the semi-logarithmic dark IV curve. However, despite the fact that the DWELL and GaAs control cells were processed simultaneously, the shoulders on the dark IV curve disappear in all the DWELL cells over the whole processed wafer. As has been discussed in previous research on transport in QDs, it is believed that the DWELL cells inhibit lateral diffusion current and thus edge recombination by collection first in the InGaAs quantum well and then trapping in the embedded InAs dots. This conclusion is further supported by the almost constant current densities of the different area DWELL devices as a function of voltage.

Impact of doping concentration, thickness, and band-gap on individual layer efficiency of CIGS solar cell

2021 ◽  
pp. 2151022
Author(s):  
Kitalu Ricin Ngoy ◽  
Abhay Kumar Singh ◽  
Tien-Chien Jen
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Layer Thickness ◽  
Current Density ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Individual Layer ◽  
Cigs Solar Cell ◽  
Highly Efficient ◽  
Cigs Solar Cells

An investigation with the individual layer physical property of the CIGS solar cells is a significant parameter to design and fabricate highly efficient devices. Therefore, this work demonstrates the thickness and carrier concentrations doping dependence simulations using SCAPS 1D software. The optimized CIGS solar cells different layer properties such as short-circuit current density ([Formula: see text], open-circuit voltage ([Formula: see text], Fill Factor (FF) and conversion efficiency ([Formula: see text] with varying thickness and doped concentration are presented. This optimized layer by layer simulation work would be useful to build a suitable CIGS solar cell structure. This simulation investigation showed that an optimal CIGS device structure can be fabricated possessing the configuration of a window layer ZnO : Al thickness 0.02 [Formula: see text]m, ZnO layer thickness 0.01 [Formula: see text] m with [Formula: see text] = 10[Formula: see text] cm[Formula: see text] and [Formula: see text] = 10[Formula: see text] cm[Formula: see text], a CdS buffer layer thickness 0.01 [Formula: see text]m with [Formula: see text] = 10[Formula: see text] cm[Formula: see text] and absorber layer CIGS in the thickness range of 1–4 [Formula: see text]m with the doping level range [Formula: see text] = 10[Formula: see text]–10[Formula: see text] cm[Formula: see text], along with the optimal CIGS energy bandgap range of 1.3–1.45 eV. According to optimized simulation results, a CIGS solar cell device can possess electric efficiency 26.61%, FF 82.96%, current density of 38.21 mA/cm2 with the open circuit voltage 0.7977 eV. Hence, these optimized simulation findings could be helpful to provide a path to design and fabricate highly efficient CIGS solar cells devices.

Optical and Electrical Effect of Texture Morphology on the Performance of Thin-Film Solar Cells

2012 ◽  
Vol 1426 ◽  
pp. 161-166
Author(s):  
Daiji Kanematsu ◽  
Mitsuhiro Matsumoto ◽  
Shigeo Yata ◽  
Yoichiro Aya ◽  
Akira Terakawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Point Of View ◽  
Thin Film Solar Cells ◽  
Electrical Effect

ABSTRACTWe correlated the texture morphology and the solar cell properties by measuring the distribution in the texture morphology. As a result, the short-circuit current ISC was approximated across various types of substrates by the standard texture height. Furthermore, we investigated the texture morphology from the point of view of the electrical effects. With regard to this point, the open-circuit voltage VOC was correlated to the steepest texture angle. Therefore, we consider that the both of the ISC and the VOC can be improved by controlling the distribution in the texture morphology.

Porous Silicon Antireflection Coating for Solar Cells Using Chemical Etching in HF-FeCl3-H2O

2016 ◽  
Vol 22 ◽  
pp. 1-6 ◽  
Author(s):  
Rachid Chaoui ◽  
Bedra Mahmoudi ◽  
Yasmine Si Ahmed
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Current Density ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Relative Improvement ◽  
Cell Conversion

Stain etching of silicon solar cells in HF-FeCl3-H2O solutions as a last step in the processing sequence is reported. The etching was carried out without protecting the screen printed contacts. Following optimization of the solution composition and using very short etching times to alleviate the contact degradation problem, the solar cell weighted reflectance (Rw) between 400 and 1100 nm could be reduced from 38.23% to 11.54%. For the best small area cell (~20 cm2), the PS antireflective layer led to a relative improvement of 62.74% in the short-circuit current density, the FF was enhanced by 5.5% absolute, the open-circuit voltage was increased by 1.2 mV and the cell conversion efficiency was raised by 4.1% absolute from 5.4% to 9.5%. The best large area cell (~78 cm2) shows the following changes after porous layer formation: a relative improvement of 45.43% in the short-circuit current density, an improvement in the FF of 7.4% absolute, an increase in the open-circuit voltage by 7.5 mV and an enhancement in the cell efficiency by 4.0% absolute from 6.2% to 10.2%. This method shows a great potential for the cost-effective reduction of reflectance losses in industrial silicon solar cell manufacturing.

scholarly journals Modeling and Optimization of Advanced Single- and Multijunction Solar Cells Based on Thin-Film a-Si:H/SiGe Heterostructure

2011 ◽  
Vol 2011 ◽  
pp. 1-8 ◽  
Author(s):  
Abdolnabi Kosarian ◽  
Peyman Jelodarian
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
Open Circuit ◽  
Single Junction ◽  
Multijunction Solar Cells ◽  
Double Junction ◽  
Thick Absorber ◽  
Junction Structure

In amorphous thin-film p-i-n solar cell, a thick absorber layer can absorb more light to generate carriers. On the other hand, a thin i-layer cannot absorb enough light. Thickness of the i-layer is a key parameter that can limit the performance of solar cell. Introducing Ge atoms to the Si lattice in Si-based solar cells is an effective approach in improving their characteristics. Especially, current density of the cell can be enhanced without deteriorating its open circuit voltage, due to the modulation of material band-gap and the formation of a heterostructure. This work presents a novel numerical evaluation and optimization of an amorphous silicon double-junction structure thin-film solar cell (a-SiGe:H/a-Si:H) and focuses on optimization of a-SiGe:H mid-gap single-junction solar cell based on the optimization of the Ge content in the film, thickness of i-layer, p-layer and doping concentration of p-layer in a (p-layer a-Si:H/i-layer a-SiGe:H/n-layer a-Si:H) single-junction thin-film solar cell. Optimization shows that for an appropriate Ge concentration, the efficiency of a-Si:H/a-SiGe solar cell is improved by about 6.5% compared with the traditional a-Si:H solar cells.

scholarly journals Numerical Simulation Analysis of Ag Crystallite Effects on Interface of Front Metal and Silicon in the PERC Solar Cell

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 592
Author(s):  
Myeong Sang Jeong ◽  
Yonghwan Lee ◽  
Ka-Hyun Kim ◽  
Sungjin Choi ◽  
Min Gu Kang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Surface Recombination ◽  
Open Circuit ◽  
Surface Recombination Velocity ◽  
Metal Interface ◽  
Ag Crystallites ◽  
Recombination Velocity

In the fabrication of crystalline silicon solar cells, the contact properties between the front metal electrode and silicon are one of the most important parameters for achieving high-efficiency, as it is an integral element in the formation of solar cell electrodes. This entails an increase in the surface recombination velocity and a drop in the open-circuit voltage of the solar cell; hence, controlling the recombination velocity at the metal-silicon interface becomes a critical factor in the process. In this study, the distribution of Ag crystallites formed on the silicon-metal interface, the surface recombination velocity in the silicon-metal interface and the resulting changes in the performance of the Passivated Emitter and Rear Contact (PERC) solar cells were analyzed by controlling the firing temperature. The Ag crystallite distribution gradually increased corresponding to a firing temperature increase from 850 ∘C to 950 ∘C. The surface recombination velocity at the silicon-metal interface increased from 353 to 599 cm/s and the open-circuit voltage of the PERC solar cell decreased from 659.7 to 647 mV. Technology Computer-Aided Design (TCAD) simulation was used for detailed analysis on the effect of the surface recombination velocity at the silicon-metal interface on the PERC solar cell performance. Simulations showed that the increase in the distribution of Ag crystallites and surface recombination velocity at the silicon-metal interface played an important role in the decrease of open-circuit voltage of the PERC solar cell at temperatures of 850–900 ∘C, whereas the damage caused by the emitter over fire was determined as the main cause of the voltage drop at 950 ∘C. These results are expected to serve as a steppingstone for further research on improvement in the silicon-metal interface properties of silicon-based solar cells and investigation on high-efficiency solar cells.

scholarly journals CdTe-Based Thin Film Solar Cells: Past, Present and Future

Energies ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1684
Author(s):  
Alessandro Romeo ◽  
Elisa Artegiani
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Early Years ◽  
Solar Cell Efficiency ◽  
Cell Efficiency

CdTe is a very robust and chemically stable material and for this reason its related solar cell thin film photovoltaic technology is now the only thin film technology in the first 10 top producers in the world. CdTe has an optimum band gap for the Schockley-Queisser limit and could deliver very high efficiencies as single junction device of more than 32%, with an open circuit voltage of 1 V and a short circuit current density exceeding 30 mA/cm2. CdTe solar cells were introduced at the beginning of the 70s and they have been studied and implemented particularly in the last 30 years. The strong improvement in efficiency in the last 5 years was obtained by a new redesign of the CdTe solar cell device reaching a single solar cell efficiency of 22.1% and a module efficiency of 19%. In this paper we describe the fabrication process following the history of the solar cell as it was developed in the early years up to the latest development and changes. Moreover the paper also presents future possible alternative absorbers and discusses the only apparently controversial environmental impacts of this fantastic technology.

scholarly journals GaInP/GaAs/poly-Si Multi-Junction Solar Cells by in Metal Balls Bonding

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 726
Author(s):  
Ray-Hua Horng ◽  
Yu-Cheng Kao ◽  
Apoorva Sood ◽  
Po-Liang Liu ◽  
Wei-Cheng Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Low Temperature ◽  
Triple Junction ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Metal Line ◽  
Solar Simulator ◽  
Junction Solar Cell

In this study, a mechanical stacking technique has been used to bond together the GaInP/GaAs and poly-silicon (Si) solar wafers. A GaInP/GaAs/poly-Si triple-junction solar cell has mechanically stacked using a low-temperature bonding process which involves micro metal In balls on a metal line using a high-optical-transmission spin-coated glue material. Current–voltage measurements of the GaInP/GaAs/poly-Si triple-junction solar cells have carried out at room temperature both in the dark and under 1 sun with 100 mW/cm2 power density using a solar simulator. The GaInP/GaAs/poly-Si triple-junction solar cell has reached an efficiency of 24.5% with an open-circuit voltage of 2.68 V, a short-circuit current density of 12.39 mA/cm2, and a fill-factor of 73.8%. This study demonstrates a great potential for the low-temperature micro-metal-ball mechanical stacking technique to achieve high conversion efficiency for solar cells with three or more junctions.

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