scholarly journals Effect of physical properties of polymer on ion implantation

2012 ◽  
Vol 61 (10) ◽  
pp. 105203
Author(s):  
Huang Yong-Xian ◽  
L Shi-Xiong ◽  
Tian Xiu-Bo ◽  
Yang Shi-Qin ◽  
Fu Ricky ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Physical Properties

Influence of ion implantation on physical properties of YBa2Cu3Ox

1996 ◽  
Vol 46 (S3) ◽  
pp. 1479-1480
Author(s):  
Vasilij Šmatko ◽  
Pavol Čičmanec ◽  
František Hanic ◽  
Vladimír Štrbík ◽  
Štefan Beňačka ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Physical Properties

Atomic structure of ion-implantation produced amorphous silicon and amorphous-crystalline interface structure and kinetics

1983 ◽  
Vol 41 ◽  
pp. 122-123
Author(s):  
J. Narayan ◽  
D. Fathy
Keyword(s):  
Solar Cells ◽  
Ion Implantation ◽  
Physical Properties ◽  
Amorphous Silicon ◽  
Crystallization Kinetics ◽  
Atomic Structure ◽  
Solid Phase ◽  
Interface Structure ◽  
Solid Phase Crystallization ◽  
Two Factors

The structure of amorphous silicon determines its physical properties ranging from crystallization kinetics to efficiency of solar cells. One point of particular interest has been the existance of microcrystallites in the amorphous phase. Different crystallization kinetics are obtained for purely amorphous silicon and for amorphous silicon having a trace of crystallinity. The incorporation of dopants into substitutional sites after solid-phase crystallization has been also found to be affected by the degree of amorphousness.The purpose of this investigation was two fold: first, to characterize the structure of amorphous silicon, and second to study the structure of amorphous-crystalline interface. The importance of these two factors in the crystallization phenomena is discussed.

Ion-Beam Processing of Ion-Implanted Si

1983 ◽  
Vol 27 ◽  
Author(s):  
H.B. Dietrich ◽  
R.J. Corazzi ◽  
W.F. Tseng
Keyword(s):  
Ion Implantation ◽  
Physical Properties ◽  
Power Density ◽  
Ion Beam ◽  
Sample Temperature ◽  
Device Applications ◽  
Current Densities ◽  
Power Densities ◽  
Ion Implanted

AbstractSubstrates can undergo major temperature excursions during ion implantation if they are not well heat sunk. At power densities on the order of 50 watts per cm−2 radiatively cooled Si will melt in a matter of seconds. Such power densities can be maintained over a few sq. cms with many of the beams produced by even the moderate current machines currently used for doping Si and the III-V's. We have made use of this fact to study pulsed ion-beam annealing of implanted Si. Two types of studies have been carried out. In the first, 5–20 sec proton irradiations were done at power densities of 3–35 watts cm−2 to produce sample temperatures of 500 to 1100°C. 2×1016 cm−2 280 keV B, BF2 , As and P implants were annealed in this manner. Sheet resistances, ρs, versus power density curves were obtained for each ion and compared to psρs vs T data obtained for furnace annealed companion samples. In the second study the 2×1016cm−2 280 keV implants were carried out at progressively higher current densities so that the dopant beam itself raised the sample temperature to 500–1000°C. For each ion (other than B) it was possible to obtain power densities which resulted in self-annealing implants whose sheet resistances were as low as those obtained with the optimal furnace anneal. Details of the experiments, electrical and physical properties of the pulsed ion-beam annealed layers and device applications will be presented in this paper.

Effect of Ti Substrate Ion Implantation on the Physical Properties of Anodic TiO2 Nanotubes

2018 ◽  
Vol 72 (5) ◽  
pp. 604-609 ◽  
Author(s):  
Zahra Jedi-Soltanabadi ◽  
Mahmood Ghoranneviss ◽  
Zohreh Ghorannevis ◽  
Hossein Akbari
Keyword(s):  
Ion Implantation ◽  
Physical Properties ◽  
Tio2 Nanotubes

Synthesis and Physical Properties of Semiconductor Nanocrystals Formed by Ion Implantation

1997 ◽  
pp. 198-212 ◽  
Author(s):  
Jane G. Zhu ◽  
C. W. White ◽  
S. P. Withrow ◽  
J. D. Budai ◽  
R. Mu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Physical Properties ◽  
Semiconductor Nanocrystals

scholarly journals Effect of Cu Negative Ion Implantation on Physical Properties of Zn1-xMnxTe Films

2013 ◽  
Vol 123 (5) ◽  
pp. 939-942 ◽  
Author(s):  
A.D. Pogrebnjak ◽  
A.P. Shypylenko ◽  
H. Amekura ◽  
Y. Takeda ◽  
A.S. Opanasyuk ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Physical Properties ◽  
Negative Ion

Ion implantation by means of nuclear reactions

1969 ◽  
Vol 311 (1504) ◽  
pp. 79-110 ◽  
Keyword(s):  
Ion Implantation ◽  
Physical Properties ◽  
Nuclear Reactions ◽  
Diagnostic Techniques ◽  
Host Lattice ◽  
Radioactive Isotopes ◽  
Bulk Properties ◽  
Intensive Investigation

The implantation of a dilute solute into a host lattice has become an important technique for investigations in diverse fields. Originally conceived as a method for the flexible and purposeful introduction of solute into host to effect a macroscopic change of physical properties, the technique itself has become subject to intensive investigation. Diagnostic techniques for the study of implantation phenomena may be separated into two classes: the first uses external probes to distinguish properties of the solute from those of the host or to measure changes in bulk properties arising from the solute presence, while the second uses eminations from the implanted solutes as internal probes of the environment. It is this latter technique which is of concern here. Moreover, the discussion will be restricted to the use of nuclear radiations from states excited by the reaction which caused the implantation. The implantation of radioactive isotopes, which may be a by-product of the reaction-induced implantation, is not discussed.

Effect of hydrogen ion implantation on the physical properties of SiO2/Si system

Vacuum ◽  
2000 ◽  
Vol 58 (2-3) ◽  
pp. 166-173 ◽  
Author(s):  
A Szekeres ◽  
S Alexandrova ◽  
A Paneva
Keyword(s):  
Ion Implantation ◽  
Physical Properties ◽  
Hydrogen Ion ◽  
Hydrogen Ion Implantation
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