Ion-Beam Processing of Ion-Implanted Si

1983 ◽  
Vol 27 ◽  
Author(s):  
H.B. Dietrich ◽  
R.J. Corazzi ◽  
W.F. Tseng
Keyword(s):  
Ion Implantation ◽  
Physical Properties ◽  
Power Density ◽  
Ion Beam ◽  
Sample Temperature ◽  
Device Applications ◽  
Current Densities ◽  
Power Densities ◽  
Ion Implanted

AbstractSubstrates can undergo major temperature excursions during ion implantation if they are not well heat sunk. At power densities on the order of 50 watts per cm−2 radiatively cooled Si will melt in a matter of seconds. Such power densities can be maintained over a few sq. cms with many of the beams produced by even the moderate current machines currently used for doping Si and the III-V's. We have made use of this fact to study pulsed ion-beam annealing of implanted Si. Two types of studies have been carried out. In the first, 5–20 sec proton irradiations were done at power densities of 3–35 watts cm−2 to produce sample temperatures of 500 to 1100°C. 2×1016 cm−2 280 keV B, BF2 , As and P implants were annealed in this manner. Sheet resistances, ρs, versus power density curves were obtained for each ion and compared to psρs vs T data obtained for furnace annealed companion samples. In the second study the 2×1016cm−2 280 keV implants were carried out at progressively higher current densities so that the dopant beam itself raised the sample temperature to 500–1000°C. For each ion (other than B) it was possible to obtain power densities which resulted in self-annealing implants whose sheet resistances were as low as those obtained with the optimal furnace anneal. Details of the experiments, electrical and physical properties of the pulsed ion-beam annealed layers and device applications will be presented in this paper.

Ultra-Pure Processing: a Key Challenge for Ion Implantation Processing for Fabrication of ULSI Devices

1989 ◽  
Vol 147 ◽  
Author(s):  
M. I. Current ◽  
L. A. Larson
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Wafer Surface ◽  
Physical Mechanisms ◽  
Foreign Materials ◽  
Ion Implanted

AbstractA key issue in modern ion implantation processing is the requirement for dramatic improvements in the purity of the incident ion beam and reductions in the deposition of foreign materials onto the wafer surface. These deposited materials include particles as well as sputtered and vapor deposited metals and dopants. Physical mechanisms which effect the elemental purity of atoms arriving at the surface of ion implanted wafers and progress towards achieving implantation purity levels of below 100 ppm of the implanted dose for sputtered metal and dopant films are discussed.

The influence of nanostructure formation on properties for Cr implanted PET

2001 ◽  
Vol 665 ◽  
Author(s):  
Wu Yuguang ◽  
Zhang Tonghe ◽  
Zhang Huixing ◽  
Zhang Xiaoji ◽  
Cui Ping ◽  
...  
Keyword(s):  
Wear Resistance ◽  
Ion Implantation ◽  
Metal Ion ◽  
Ion Beam ◽  
Dose Range ◽  
Surface Hardness ◽  
Metal Vapor ◽  
Vacuum Arc ◽  
Ion Beam Modification ◽  
Ion Implanted

ABSTRACTPolyethylene terephthalate (PET) has been modified by Cr ion implantation with a dose range from 1×1016to 2×1017ions /cm2 using a metal vapor vacuum arc MEVVA source. The surface morphology was observed by atomic force microscopy (AFM). The Cr atom precipitation was found. The changes of the structure and composition have been observed with transmission electron microscope (TEM). The TEM photos revealed the presence of Cr nano-meter particles on the implanted PET. It is believed that the change would cause the improvement of the conductive properties and wear resistance. The electrical properties of PET have been improved after metal ion implantation. The resistivity of Cr ion implanted PET decreased obviously with an increase of ion dose. When the metal ion dose with 2×1017cm−2 was implanted into PET, the resistivity of PET could be less than 0.1 Ωm. But when Si or C ions with same dose are implanted PET, the resistivity of PET would be up to several Ωm. The result show that the resistivity of Cr ion implanted sample is obviously lower than that of Si- and C-implanted one. After Cr implantation, the surface hardness and modulus could be increased. The property of the implanted PET has modified greatly. The hardness and modulus of Cr implanted PET with dose of 2×1017/cm2 is 9.5 and 3.1 times greater than that of pristine PET. So we can see that wear resistance improved greatly. The Cr ion beam modification mechanism of PET will be discussed.

Ion Beam Modification of Silicone Rubber

1989 ◽  
Vol 153 ◽  
Author(s):  
Yoshiaki Suzuki ◽  
Masahiro Kusakabe ◽  
Masaya Iwaki ◽  
Masaaki Suzuki
Keyword(s):  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Silicone Rubber ◽  
Ion Beam ◽  
Chemical Properties ◽  
Ion Beam Modification ◽  
Chemical States ◽  
Ft Ir ◽  
Ion Species ◽  
Ion Implanted

AbstractIon implantation in silicone rubber has been carried out in order to study its effects on structure and chemical states. H+-, He+-, C+-, N+-, N2+-, O+-, O2+-, Ne+-, Na+-, Ar+-, and K+- ion implantations were performed at an energy of 150 keV with doses ranging from 1×1013 to 1×1017 ions/cm2 at room temperature. The depth profiles of the ion implanted elements and host elements were investigated by means of XPS and SIMS. The chemical properties were studied by FT-IR-ATR and Raman spectroscopy. XPS results indicated that most of the implanted elements showed a Gaussian like distribution in the silicone polymer matrix, but implanted He+, Ne+, and Ar+ could not be detected. Results of FT-IR-ATR showed that ion implantation broke CH3 and Si-O bonds to form new radicals such as SiOH, >C=0, CH2 and SiHx and the effects varied depending on the implanted ion species. The Raman spectroscopy results showed that ion implanted silicone contained both sp3 and sp2 bonded carbon.

Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

1982 ◽  
Vol 40 ◽  
pp. 460-461
Author(s):  
P. Ling ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
Electron Diffraction ◽  
Ion Implantation ◽  
Diffraction Analysis ◽  
Diffraction Pattern ◽  
Direct Consequence ◽  
The Other ◽  
Electron Diffraction Analysis ◽  
Defect Microstructures ◽  
Ion Implanted

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

scholarly journals Near-field thermophotovoltaics for efficient heat to electricity conversion at high power density

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Rohith Mittapally ◽  
Byungjun Lee ◽  
Linxiao Zhu ◽  
Amin Reihani ◽  
Ju Won Lim ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Efficiency ◽  
Near Field ◽  
Electrical Power ◽  
Photovoltaic Cells ◽  
High Power Density ◽  
Pv Cell ◽  
Electrical Power Output ◽  
Power Densities

AbstractThermophotovoltaic approaches that take advantage of near-field evanescent modes are being actively explored due to their potential for high-power density and high-efficiency energy conversion. However, progress towards functional near-field thermophotovoltaic devices has been limited by challenges in creating thermally robust planar emitters and photovoltaic cells designed for near-field thermal radiation. Here, we demonstrate record power densities of ~5 kW/m2 at an efficiency of 6.8%, where the efficiency of the system is defined as the ratio of the electrical power output of the PV cell to the radiative heat transfer from the emitter to the PV cell. This was accomplished by developing novel emitter devices that can sustain temperatures as high as 1270 K and positioning them into the near-field (<100 nm) of custom-fabricated InGaAs-based thin film photovoltaic cells. In addition to demonstrating efficient heat-to-electricity conversion at high power density, we report the performance of thermophotovoltaic devices across a range of emitter temperatures (~800 K–1270 K) and gap sizes (70 nm–7 µm). The methods and insights achieved in this work represent a critical step towards understanding the fundamental principles of harvesting thermal energy in the near-field.

scholarly journals Power Density Improvement of Piezoelectric Energy Harvesters via a Novel Hybridization Scheme with Electromagnetic Transduction

Micromachines ◽  
2021 ◽  
Vol 12 (7) ◽  
pp. 803
Author(s):  
Zhongjie Li ◽  
Chuanfu Xin ◽  
Yan Peng ◽  
Min Wang ◽  
Jun Luo ◽  
...  
Keyword(s):  
Power Density ◽  
Output Power ◽  
Energy Harvester ◽  
Hybrid Energy ◽  
Energy Harvesters ◽  
Piezoelectric Patch ◽  
Piezoelectric Energy ◽  
Electromagnetic Transduction ◽  
Self Powered ◽  
Power Densities

A novel hybridization scheme is proposed with electromagnetic transduction to improve the power density of piezoelectric energy harvester (PEH) in this paper. Based on the basic cantilever piezoelectric energy harvester (BC-PEH) composed of a mass block, a piezoelectric patch, and a cantilever beam, we replaced the mass block by a magnet array and added a coil array to form the hybrid energy harvester. To enhance the output power of the electromagnetic energy harvester (EMEH), we utilized an alternating magnet array. Then, to compare the power density of the hybrid harvester and BC-PEH, the experiments of output power were conducted. According to the experimental results, the power densities of the hybrid harvester and BC-PEH are, respectively, 3.53 mW/cm3 and 5.14 μW/cm3 under the conditions of 18.6 Hz and 0.3 g. Therefore, the power density of the hybrid harvester is 686 times as high as that of the BC-PEH, which verified the power density improvement of PEH via a hybridization scheme with EMEH. Additionally, the hybrid harvester exhibits better performance for charging capacitors, such as charging a 2.2 mF capacitor to 8 V within 17 s. It is of great significance to further develop self-powered devices.

scholarly journals Topological electronics

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Matthew J. Gilbert
Keyword(s):  
Information Processing ◽  
Physical Properties ◽  
Materials Science ◽  
Electronic Device ◽  
Condensed Matter ◽  
Topological Phases ◽  
Applied Physics ◽  
New Paradigm ◽  
Topological Materials ◽  
Device Applications

AbstractWithin the broad and deep field of topological materials, there are an ever-increasing number of materials that harbor topological phases. While condensed matter physics continues to probe the exotic physical properties resulting from the existence of topological phases in new materials, there exists a suite of “well-known” topological materials in which the physical properties are well-characterized, such as Bi2Se3 and Bi2Te3. In this context, it is then appropriate to ask if the unique properties of well-explored topological materials may have a role to play in applications that form the basis of a new paradigm in information processing devices and architectures. To accomplish such a transition from physical novelty to application based material, the potential of topological materials must be disseminated beyond the reach of condensed matter to engender interest in diverse areas such as: electrical engineering, materials science, and applied physics. Accordingly, in this review, we assess the state of current electronic device applications and contemplate the future prospects of topological materials from an applied perspective. More specifically, we will review the application of topological materials to the general areas of electronic and magnetic device technologies with the goal of elucidating the potential utility of well-characterized topological materials in future information processing applications.

Giant power density produced by PIN–PMN–PT ferroelectric single crystals due to a pressure induced polar-to-nonpolar phase transformation

2021 ◽  
Author(s):  
Sergey I. Shkuratov ◽  
Jason Baird ◽  
Vladimir G. Antipov ◽  
Christopher S. Lynch ◽  
Shujun Zhang ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Energy Storage ◽  
Single Crystals ◽  
Power Density ◽  
Ferroelectric Materials ◽  
Power Supplies ◽  
Energy Storage Devices ◽  
Storage Devices ◽  
New Generation ◽  
Power Densities

The search for ferroelectric materials capable of producing high electric charge and power densities is important for developing a new generation of ultrahigh-power-density ferroelectric energy storage devices and autonomous megawatt power supplies.

The influences of operating conditions and design configurations on the performance of symmetric electrochemical capacitors

2016 ◽  
Vol 18 (41) ◽  
pp. 28626-28647 ◽  
Author(s):  
Innocent S. Ike ◽  
Iakovos Sigalas ◽  
Sunny E. Iyuke
Keyword(s):  
Energy Density ◽  
Power Density ◽  
Electrochemical Capacitors ◽  
Electrochemical Capacitor ◽  
Operating Conditions ◽  
Modelling And Simulation ◽  
Charging Current ◽  
Current Densities

The influence of different charging current densities, charging times and several structural designs on symmetric electrochemical capacitor (EC) performance, including capacitance, energy density and power density, has been investigated via modelling and simulation.

Sign in / Sign up

Export Citation Format

Share Document