scholarly journals Improvement on thermal stability of power heterojunction bipolar transistor using non-uniform finger spacing

2011 ◽  
Vol 60 (7) ◽  
pp. 078501
Author(s):  
Chen Liang ◽  
Zhang Wan-Rong ◽  
Jin Dong-Yue ◽  
Xie Hong-Yun ◽  
Xiao Ying ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Thermal Stability Of

Thermal stability of Si/Si1−xGex/Si heterojunction bipolar transistor structures grown by limited reaction processing

1989 ◽  
Vol 55 (19) ◽  
pp. 1978-1980 ◽  
Author(s):  
D. B. Noble ◽  
J. L. Hoyt ◽  
J. F. Gibbons ◽  
M. P. Scott ◽  
S. S. Laderman ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Reaction Processing ◽  
Thermal Stability Of

The Effect of Thermal Resistans on IC-VBE Fly-Back Characteristic of Power SiGe Heterojunction Bipolar Transistor

2014 ◽  
Vol 701-702 ◽  
pp. 1177-1180
Author(s):  
Liang Chen
Keyword(s):  
Thermal Stability ◽  
Theoretical Analysis ◽  
Computer Simulations ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Experimental Measurements ◽  
Collector Current ◽  
Analysis Computer

The effect of thermal resistans onIC-VBEfly-back characteristic of power SiGe heterojunction bipolar transistor is studied through theoretical analysis, computer simulations, and experimental measurements. It is found that a suitable thermal resistans can make the collector current achieve the second fly-back point before transistors are burned-out, and then returns to a stable situation. Such a thermal resistans is beneficial to the thermal stability. When the thermal resistans is small, the curve ofIC-VBEfly-back characteristic of HBT has no fly-back point. While the thermal resistans increases, the curve ofIC-VBEfly-back characteristic of HBT has two fly-back points.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Thermal stability of Al-Cu-Fe icosahedral alloys

1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of
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