Thermal stability of Si/Si1−xGex/Si heterojunction bipolar transistor structures grown by limited reaction processing

1989 ◽  
Vol 55 (19) ◽  
pp. 1978-1980 ◽  
Author(s):  
D. B. Noble ◽  
J. L. Hoyt ◽  
J. F. Gibbons ◽  
M. P. Scott ◽  
S. S. Laderman ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Reaction Processing ◽  
Thermal Stability Of

scholarly journals Improvement on thermal stability of power heterojunction bipolar transistor using non-uniform finger spacing

2011 ◽  
Vol 60 (7) ◽  
pp. 078501
Author(s):  
Chen Liang ◽  
Zhang Wan-Rong ◽  
Jin Dong-Yue ◽  
Xie Hong-Yun ◽  
Xiao Ying ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Thermal Stability Of

Limited Reaction Processing: Growth of Si-Ge/Si for Heterojunction Bipolar Transistor Applications

1989 ◽  
Author(s):  
Jim GIBBONS ◽  
Judy HOYT ◽  
Cliff KING ◽  
Dave NOBLE ◽  
Chris GRONET ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Reaction Processing

Limited reaction processing: Growth of Si1−xGex/Si for heterojunction bipolar transistor applications

1990 ◽  
Vol 184 (1-2) ◽  
pp. 93-106 ◽  
Author(s):  
J.L. Hoyt ◽  
C.A. King ◽  
D.B. Noble ◽  
C.M. Gronet ◽  
J.F. Gibbons ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Reaction Processing

The Effect of Thermal Resistans on IC-VBE Fly-Back Characteristic of Power SiGe Heterojunction Bipolar Transistor

2014 ◽  
Vol 701-702 ◽  
pp. 1177-1180
Author(s):  
Liang Chen
Keyword(s):  
Thermal Stability ◽  
Theoretical Analysis ◽  
Computer Simulations ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Experimental Measurements ◽  
Collector Current ◽  
Analysis Computer

The effect of thermal resistans onIC-VBEfly-back characteristic of power SiGe heterojunction bipolar transistor is studied through theoretical analysis, computer simulations, and experimental measurements. It is found that a suitable thermal resistans can make the collector current achieve the second fly-back point before transistors are burned-out, and then returns to a stable situation. Such a thermal resistans is beneficial to the thermal stability. When the thermal resistans is small, the curve ofIC-VBEfly-back characteristic of HBT has no fly-back point. While the thermal resistans increases, the curve ofIC-VBEfly-back characteristic of HBT has two fly-back points.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Sign in / Sign up

Export Citation Format

Share Document