scholarly journals Effect of carrier recombination on time-resolved Faraday rotation spectroscopy in GaAs quantum wells

2011 ◽  
Vol 60 (5) ◽  
pp. 057202
Author(s):  
Teng Li-Hua ◽  
Wang Xia
Keyword(s):  
Quantum Wells ◽  
Faraday Rotation ◽  
Time Resolved ◽  
Carrier Recombination

Dynamics of carrier recombination and localization in AlGaN quantum wells studied by time-resolved transmission spectroscopy

2009 ◽  
Vol 95 (9) ◽  
pp. 091910 ◽  
Author(s):  
V. Liuolia ◽  
S. Marcinkevičius ◽  
A. Pinos ◽  
R. Gaska ◽  
M. S. Shur
Keyword(s):  
Quantum Wells ◽  
Time Resolved ◽  
Carrier Recombination ◽  
Transmission Spectroscopy

Time-Resolved Nonlinear Faraday Rotation in Semimagnetic Quantum Wells

1997 ◽  
Vol 204 (1) ◽  
pp. 49-51
Author(s):  
R. Pankoke ◽  
P. Leisching ◽  
C. Buss ◽  
R. Frey ◽  
J. Cibert ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Faraday Rotation ◽  
Time Resolved ◽  
Nonlinear Faraday Rotation

Phonon satellites and time-resolved studies of carrier recombination dynamics in InGaN quantum wells

2007 ◽  
Vol 41 (5-6) ◽  
pp. 419-424 ◽  
Author(s):  
S.M. Olaizola ◽  
W.H. Fan ◽  
D.J. Mowbray ◽  
M.S. Skolnick ◽  
P.J. Parbrook ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Time Resolved ◽  
Carrier Recombination ◽  
Recombination Dynamics ◽  
Ingan Quantum Wells

scholarly journals Time-resolved observation of ballistic acceleration of electrons in GaAs quantum wells

1992 ◽  
Vol 7 (3B) ◽  
pp. B133-B136 ◽  
Author(s):  
W Sha ◽  
T B Norris ◽  
W J Schaff ◽  
K E Meyer
Keyword(s):  
Quantum Wells ◽  
Time Resolved

Anomalous Mn Spin Resonance Detected by Time-Resolved Kerr Effect in CdMnTe Quantum Wells

2002 ◽  
Vol 190 (3) ◽  
pp. 715-718 ◽  
Author(s):  
F. Teppe ◽  
C. Camilleri ◽  
D. Scalbert ◽  
Y.G. Semenov ◽  
M. Nawrocki ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Kerr Effect ◽  
Time Resolved ◽  
Spin Resonance

Optical Study of Localized and Delocalized States in GaAsN/GaAs

2003 ◽  
Vol 798 ◽  
Author(s):  
Z. Y. Xu ◽  
X. D. Luo ◽  
X. D. Yang ◽  
P. H. Tan ◽  
C. L. Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Rapid Thermal Annealing ◽  
Short Pulse ◽  
Selective Excitation ◽  
Excitation Power ◽  
Pulse Excitation ◽  
Optical Study ◽  
Time Resolved ◽  
Exciton Localization ◽  
Time Resolved Photoluminescence

ABSTRACTTaking advantages of short pulse excitation and time-resolved photoluminescence (PL), we have studied the exciton localization effect in a number of GaAsN alloys and GaAsN/GaAs quantum wells (QWs). In the PL spectra, an extra transition located at the higher energy side of the commonly reported N-related emissions is observed. By measuring PL dependence on temperature and excitation power along with PL dynamics study, the new PL peak has been identified as a transition of the band edge-related recombination in dilute GaAsN alloy and delocalized transition in QWs. Using selective excitation PL we further attribute the localized emission in QWs to the excitons localized at the GaAsN/GaAs interfaces. This interface-related exciton localization could be greatly reduced by a rapid thermal annealing.

scholarly journals Faraday rotation spectroscopy of quantum-dot quantum wells

2005 ◽  
Vol 71 (20) ◽  
Author(s):  
Florian Meier ◽  
David D. Awschalom
Keyword(s):  
Quantum Dot ◽  
Quantum Wells ◽  
Faraday Rotation
Sign in / Sign up

Export Citation Format

Share Document