scholarly journals Infrared spectroscopic ellipsometry studies of ion-implanted and annealed silicon wafers

2010 ◽  
Vol 59 (3) ◽  
pp. 1632
Author(s):  
Liu Xian-Ming ◽  
Li Bin-Cheng ◽  
Gao Wei-Dong ◽  
Han Yan-Ling
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Silicon Wafers ◽  
Infrared Spectroscopic ◽  
Ion Implanted

New Nondestructive Carrier Profiling for Ion Implanted Si Using Infrared Spectroscopic Ellipsometry

1997 ◽  
Author(s):  
Takuya Sakamoto ◽  
Hiroyuki Nakano ◽  
Yoshinari Kamakura ◽  
Kenji Taniguchi ◽  
Kenji Nishi ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Infrared Spectroscopic ◽  
Ion Implanted

Spectroscopic ellipsometry study of N+ ion-implanted ethylene–norbornene films

2014 ◽  
Vol 98 ◽  
pp. 7-13 ◽  
Author(s):  
M. Šiljegović ◽  
Z.M. Kačarević-Popović ◽  
M. Stchakovsky ◽  
A.N. Radosavljević ◽  
S. Korica ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Ion Implanted

scholarly journals Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

Sensors ◽  
2019 ◽  
Vol 19 (9) ◽  
pp. 2073 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Satoshi Shigematsu ◽  
Ryo Hirose ◽  
Ryosuke Okuyama ◽  
...  
Keyword(s):  
Dark Current ◽  
Image Sensor ◽  
Image Sensors ◽  
Silicon Wafers ◽  
Device Fabrication ◽  
Oxide Semiconductor ◽  
Device Performance ◽  
Molecular Ion ◽  
Cmos Image Sensors ◽  
Ion Implanted

We developed silicon epitaxial wafers with high gettering capability by using hydrocarbon–molecular–ion implantation. These wafers also have the effect of hydrogen passivation on process-induced defects and a barrier to out-diffusion of oxygen of the Czochralski silicon (CZ) substrate bulk during Complementary metal-oxide-semiconductor (CMOS) device fabrication processes. We evaluated the electrical device performance of CMOS image sensor fabricated on this type of wafer by using dark current spectroscopy. We found fewer white spot defects compared with those of intrinsic gettering (IG) silicon wafers. We believe that these hydrocarbon–molecular–ion–implanted silicon epitaxial wafers will improve the device performance of CMOS image sensors.

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