scholarly journals Effect of the non-nearest-neighbor hopping on the electronic structure of armchair graphene nanoribbons

2009 ◽  
Vol 58 (12) ◽  
pp. 8537
Author(s):  
Jin Zi-Fei ◽  
Tong Guo-Ping ◽  
Jiang Yong-Jin
2008 ◽  
Vol 24 (02) ◽  
pp. 328-332 ◽  
Author(s):  
OUYANG Fang-Ping ◽  
◽  
◽  
XU Hui ◽  
LI Ming-Jun ◽  
...  

Nano Letters ◽  
2017 ◽  
Vol 17 (4) ◽  
pp. 2197-2203 ◽  
Author(s):  
Okan Deniz ◽  
Carlos Sánchez-Sánchez ◽  
Tim Dumslaff ◽  
Xinliang Feng ◽  
Akimitsu Narita ◽  
...  

2013 ◽  
Vol 27 (21) ◽  
pp. 1330016
Author(s):  
PAN GAO ◽  
SUHANG LIU ◽  
LIN TIAN ◽  
TIANXING MA

To realize the application of spintronics, possible magnetism in graphene-based material is an important issue to be addressed. At the tight banding level of armchair graphene nanoribbons, there are two flat bands in the band structure, two Van Hove singularities in the density of states, and the introducing of the next-nearest-neighbor hopping term cause high asymmetry in them, which plays a key role in the behavior of magnetic correlation. We further our studies within determinant quantum Monte Carlo simulation to treat the electron–electron interaction. It is found that the armchair graphene nanoribbons show carrier mediated magnetic correlation. In the armchair graphene nanoribbons, the antiferromagnetic correlation dominates around half filling, while the ferromagnetic correlation dominates as electron filling is lower than 0.8. Moreover, the ferromagnetic correlation is strengthened markedly as the next-nearest-neighbor hopping energy increases. The resultant manipulation of ferromagnetism in graphene-based material may facilitate the development of spintronics.


2014 ◽  
Vol 28 (29) ◽  
pp. 1450229 ◽  
Author(s):  
Cai-ping Cheng ◽  
Hui-fang Hu ◽  
Zhao-jin Zhang ◽  
Quanhui Liu ◽  
Ying Chen ◽  
...  

By adopting density functional theory in combination with nonequilibrium Green's functions, we investigated the electronic structure and transport properties of silicon/nitrogen ( Si / N ) co-doping armchair graphene nanoribbons (AGNRs) with SiN x co-dopant incorporated in neighboring carbon atoms. The results demonstrate that the electronic structure can be modulated by introducing SiN x co-dopants in AGNRs. The striking negative differential resistance behaviors in the range of low bias can be observed in Si / N co-doped AGNR devices. These remarkable properties suggest the potential application of Si / N co-doping AGNRs in molectronics.


2019 ◽  
Vol 21 (4) ◽  
pp. 1830-1840 ◽  
Author(s):  
J. N. Han ◽  
X. He ◽  
Z. Q. Fan ◽  
Z. H. Zhang

Metal doping induced tuning effects on geometry, electronic structure, carrier mobility, and device properties of armchair graphene nanoribbons are studied systematically and analyzed in detail.


2013 ◽  
Vol 88 (3) ◽  
Author(s):  
Adam J. Simbeck ◽  
Deyang Gu ◽  
Neerav Kharche ◽  
Parlapalli Venkata Satyam ◽  
Phaedon Avouris ◽  
...  

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