scholarly journals Analytical study of electronic structure in armchair graphene nanoribbons

2007 ◽  
Vol 75 (16) ◽  
Author(s):  
Huaixiu Zheng ◽  
Z. F. Wang ◽  
Tao Luo ◽  
Q. W. Shi ◽  
Jie Chen
Keyword(s):  
Electronic Structure ◽  
Analytical Study ◽  
Graphene Nanoribbons ◽  
Armchair Graphene Nanoribbons ◽  
Armchair Graphene

Electronic Structure and Transport Properties of Armchair Graphene Nanoribbons

2008 ◽  
Vol 24 (02) ◽  
pp. 328-332 ◽  
Author(s):  
OUYANG Fang-Ping ◽  
◽  
◽  
XU Hui ◽  
LI Ming-Jun ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Transport Properties ◽  
Graphene Nanoribbons ◽  
Armchair Graphene Nanoribbons ◽  
Armchair Graphene

scholarly journals Revealing the Electronic Structure of Silicon Intercalated Armchair Graphene Nanoribbons by Scanning Tunneling Spectroscopy

Nano Letters ◽  
2017 ◽  
Vol 17 (4) ◽  
pp. 2197-2203 ◽  
Author(s):  
Okan Deniz ◽  
Carlos Sánchez-Sánchez ◽  
Tim Dumslaff ◽  
Xinliang Feng ◽  
Akimitsu Narita ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Graphene Nanoribbons ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Armchair Graphene Nanoribbons ◽  
Armchair Graphene

Negative differential resistance induced by SiNx co-dopant in armchair graphene nanoribbon

2014 ◽  
Vol 28 (29) ◽  
pp. 1450229 ◽  
Author(s):  
Cai-ping Cheng ◽  
Hui-fang Hu ◽  
Zhao-jin Zhang ◽  
Quanhui Liu ◽  
Ying Chen ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Negative Differential Resistance ◽  
Density Functional ◽  
Graphene Nanoribbons ◽  
Differential Resistance ◽  
Functional Theory ◽  
Co Doping ◽  
Armchair Graphene Nanoribbons ◽  
Armchair Graphene Nanoribbon ◽  
Armchair Graphene

By adopting density functional theory in combination with nonequilibrium Green's functions, we investigated the electronic structure and transport properties of silicon/nitrogen ( Si / N ) co-doping armchair graphene nanoribbons (AGNRs) with SiN x co-dopant incorporated in neighboring carbon atoms. The results demonstrate that the electronic structure can be modulated by introducing SiN x co-dopants in AGNRs. The striking negative differential resistance behaviors in the range of low bias can be observed in Si / N co-doped AGNR devices. These remarkable properties suggest the potential application of Si / N co-doping AGNRs in molectronics.

Metal doped armchair graphene nanoribbons: electronic structure, carrier mobility and device properties

2019 ◽  
Vol 21 (4) ◽  
pp. 1830-1840 ◽  
Author(s):  
J. N. Han ◽  
X. He ◽  
Z. Q. Fan ◽  
Z. H. Zhang
Keyword(s):  
Electronic Structure ◽  
Carrier Mobility ◽  
Graphene Nanoribbons ◽  
Metal Doping ◽  
Armchair Graphene Nanoribbons ◽  
Metal Doped ◽  
Device Properties ◽  
Armchair Graphene

Metal doping induced tuning effects on geometry, electronic structure, carrier mobility, and device properties of armchair graphene nanoribbons are studied systematically and analyzed in detail.

scholarly journals Electronic structure of oxygen-functionalized armchair graphene nanoribbons

2013 ◽  
Vol 88 (3) ◽  
Author(s):  
Adam J. Simbeck ◽  
Deyang Gu ◽  
Neerav Kharche ◽  
Parlapalli Venkata Satyam ◽  
Phaedon Avouris ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Graphene Nanoribbons ◽  
Armchair Graphene Nanoribbons ◽  
Armchair Graphene

The Investigations of Electronic Structure in Armchair Graphene Nanoribbons Doped B at the Edge

2018 ◽  
Vol 787 ◽  
pp. 99-103
Author(s):  
Xian Bin Zhang ◽  
Ning Kang Deng ◽  
Wen Jie Wu ◽  
Xu Yan Wei ◽  
Guan Qi Wang
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Graphene Nanoribbons ◽  
First Principle ◽  
Armchair Graphene Nanoribbons ◽  
Principle Theory ◽  
Oscillation Characteristic ◽  
Armchair Graphene

In this paper, the electronic structure in armchair graphene nanoribbons (AGNRs) and graphene nanoribbons doped B at the edge (B-AGNRs) are obtained based on the first principle theory. It shows that the band gap has the oscillation characteristic whose period is 3. The band gap oscillating characteristic gradually vanishes and tends to be stable after doping B at graphene nanoribbons edge. This provides a theoretical guidance for developing the stable graphene nanodevices.

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