scholarly journals Armchair graphene nanoribbons: Electronic structure and electric-field modulation

2008 ◽  
Vol 77 (24) ◽  
Author(s):  
Hassan Raza ◽  
Edwin C. Kan
Keyword(s):  
Electronic Structure ◽  
Electric Field ◽  
Graphene Nanoribbons ◽  
Field Modulation ◽  
Armchair Graphene Nanoribbons ◽  
Armchair Graphene

Electronic Structure and Transport Properties of Armchair Graphene Nanoribbons

2008 ◽  
Vol 24 (02) ◽  
pp. 328-332 ◽  
Author(s):  
OUYANG Fang-Ping ◽  
◽  
◽  
XU Hui ◽  
LI Ming-Jun ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Transport Properties ◽  
Graphene Nanoribbons ◽  
Armchair Graphene Nanoribbons ◽  
Armchair Graphene

scholarly journals Revealing the Electronic Structure of Silicon Intercalated Armchair Graphene Nanoribbons by Scanning Tunneling Spectroscopy

Nano Letters ◽  
2017 ◽  
Vol 17 (4) ◽  
pp. 2197-2203 ◽  
Author(s):  
Okan Deniz ◽  
Carlos Sánchez-Sánchez ◽  
Tim Dumslaff ◽  
Xinliang Feng ◽  
Akimitsu Narita ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Graphene Nanoribbons ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Armchair Graphene Nanoribbons ◽  
Armchair Graphene

Electronic properties of armchair graphene nanoribbons under uniaxial strain and electric field

2018 ◽  
Vol 32 (24) ◽  
pp. 1850263 ◽  
Author(s):  
Li-Feng Jiang ◽  
Lei Xu ◽  
Jun Zhang
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Energy Gap ◽  
Graphene Nanoribbons ◽  
Uniaxial Strain ◽  
Quantum Phenomenon ◽  
Suitable Combination ◽  
Armchair Graphene Nanoribbons ◽  
Opening And Closing ◽  
Armchair Graphene

The armchair graphene nanoribbons (AGNRs) can be either semiconducting or metallic, depending on their widths. We investigate the electronic properties of AGNRs under uniaxial strain and electric field. We find that the bulk gap decreases gradually with the increase of the electric field for semiconducting case, but it cannot vanish completely in an appropriate range, which is similar to that of a single uniaxial strain. However, a suitable combination of electric field and uniaxial strain can lead to that the energy gap completely vanishes and reopens. For the metallic case, the bulk gap can display the same opening and closing behavior under an electric field and uniaxial strain. Finally, an interesting quantum phenomenon is obtained by applying a perpendicular magnetic field.

scholarly journals THE EFFECT OF CRITICAL ELECTRIC FIELDS ON THE ELECTRONIC DISTRIBUTION OF BILAYER ARMCHAIR GRAPHENE NANORIBBONS

2021 ◽  
pp. 98-112
Author(s):  
Lam Thuy Duong Nguyen ◽  
Thi Kim Quyen Nguyen ◽  
Nguyen Huu Hanh Pham ◽  
Dang Khoa Le ◽  
Van Chinh Ngo ◽  
...  
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Energy Band ◽  
Graphene Nanoribbons ◽  
Strong Impact ◽  
Parallel Electric Field ◽  
Electronic Distribution ◽  
Wide Range ◽  
Armchair Graphene Nanoribbons ◽  
Armchair Graphene

We employed tight-binding calculations and Green’s function formalism to investigate the effect of applied electric fields on the energy band and electronic properties of bilayer armchair graphene nanoribbons (BL-AGNRs). The results show that the perpendicular electric field has a strong impact on modifying and controlling the bandgap of BL-AGNRs. At the critical values of this electric field, distortions of energy dispersion in subbands and the formation of new electronic excitation channels occur strongly. These originate from low-lying energies near the Fermi level and move away from the zero-point with the increment of the electric field. Phase transitions and structural changes clearly happen in these materials. The influence of the parallel electric field is less important in changing the gap size, resulting in the absence of the critical voltage over a very wide range [–1.5 V; 1.5 V] for the semiconductor-insulator group. Nevertheless, it is interesting to note the powerful role of the parallel electric field in modifying the energy band and electronic distribution at each energy level. These results contribute to an overall picture of the physics model and electronic structure of BL-AGNRs under stimuli, which can be a pathway to real applications in the future, particularly for electronic devices.

Negative differential resistance induced by SiNx co-dopant in armchair graphene nanoribbon

2014 ◽  
Vol 28 (29) ◽  
pp. 1450229 ◽  
Author(s):  
Cai-ping Cheng ◽  
Hui-fang Hu ◽  
Zhao-jin Zhang ◽  
Quanhui Liu ◽  
Ying Chen ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Negative Differential Resistance ◽  
Density Functional ◽  
Graphene Nanoribbons ◽  
Differential Resistance ◽  
Functional Theory ◽  
Co Doping ◽  
Armchair Graphene Nanoribbons ◽  
Armchair Graphene Nanoribbon ◽  
Armchair Graphene

By adopting density functional theory in combination with nonequilibrium Green's functions, we investigated the electronic structure and transport properties of silicon/nitrogen ( Si / N ) co-doping armchair graphene nanoribbons (AGNRs) with SiN x co-dopant incorporated in neighboring carbon atoms. The results demonstrate that the electronic structure can be modulated by introducing SiN x co-dopants in AGNRs. The striking negative differential resistance behaviors in the range of low bias can be observed in Si / N co-doped AGNR devices. These remarkable properties suggest the potential application of Si / N co-doping AGNRs in molectronics.

Metal doped armchair graphene nanoribbons: electronic structure, carrier mobility and device properties

2019 ◽  
Vol 21 (4) ◽  
pp. 1830-1840 ◽  
Author(s):  
J. N. Han ◽  
X. He ◽  
Z. Q. Fan ◽  
Z. H. Zhang
Keyword(s):  
Electronic Structure ◽  
Carrier Mobility ◽  
Graphene Nanoribbons ◽  
Metal Doping ◽  
Armchair Graphene Nanoribbons ◽  
Metal Doped ◽  
Device Properties ◽  
Armchair Graphene

Metal doping induced tuning effects on geometry, electronic structure, carrier mobility, and device properties of armchair graphene nanoribbons are studied systematically and analyzed in detail.

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