scholarly journals Molecular dynamics simulation of helium cluster growth in titanium

2009 ◽  
Vol 58 (9) ◽  
pp. 6408
Author(s):  
Wang Jun ◽  
Hou Qing
2014 ◽  
Vol 455 (1-3) ◽  
pp. 544-548 ◽  
Author(s):  
Xiao-Chun Li ◽  
Xiaolin Shu ◽  
Peng Tao ◽  
Yi Yu ◽  
Guo-Jiang Niu ◽  
...  

2016 ◽  
Vol 119 (18) ◽  
pp. 185301 ◽  
Author(s):  
J. W. Abraham ◽  
T. Strunskus ◽  
F. Faupel ◽  
M. Bonitz

1993 ◽  
Vol 334 ◽  
Author(s):  
Michael R. Zachariah ◽  
Michael J. Carrier ◽  
Estela Blaisten-Barojas

AbstractClassical Molecular dynamics simulation of silicon cluster growth (up to 1000 atoms) have been conducted using the Stillinger-Weber 3-body interaction potential. The cluster binding energy has been fit to an expression that separates the surface and bulk contribution to the energy over a wide temperature and size range. Cluster growth simulations show that large heat release results from new bond formation at gas kinetic rates (i.e. sticking coefficient = unity). Temperature was found to be the primary controlling process parameter in the evolution of cluster morphology from an aggregate to a coalesced cluster below 1000 K, with the impact parameter playing a secondary role.


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