Molecular Dynamics Simulation of Large Cluster Growth
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AbstractClassical Molecular dynamics simulation of silicon cluster growth (up to 1000 atoms) have been conducted using the Stillinger-Weber 3-body interaction potential. The cluster binding energy has been fit to an expression that separates the surface and bulk contribution to the energy over a wide temperature and size range. Cluster growth simulations show that large heat release results from new bond formation at gas kinetic rates (i.e. sticking coefficient = unity). Temperature was found to be the primary controlling process parameter in the evolution of cluster morphology from an aggregate to a coalesced cluster below 1000 K, with the impact parameter playing a secondary role.
2005 ◽
Vol 228
(1-4)
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pp. 315-318
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2016 ◽
Vol 32
(4)
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pp. 641-646
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2002 ◽
Vol 16
(26)
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pp. 3971-3978
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