scholarly journals N-type window layer and its application in high deposition rate microcrystalline silicon solar cells

2009 ◽  
Vol 58 (7) ◽  
pp. 5041
Author(s):  
Zhang Xiao-Dan ◽  
Zhao Ying ◽  
Sun Fu-He ◽  
Wang Shi-Feng ◽  
Han Xiao-Yan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Deposition Rate ◽  
Window Layer ◽  
Silicon Solar Cells ◽  
High Deposition Rate ◽  
Microcrystalline Silicon

scholarly journals Ultra-thin film microcrystalline silicon with high deposition rate and its application in tandem silicon solar cells

2015 ◽  
Vol 64 (22) ◽  
pp. 228801
Author(s):  
Bai Li-Sha ◽  
Li Tian-Tian ◽  
Liu Bo-Fei ◽  
Huang Qian ◽  
Li Bao-Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Deposition Rate ◽  
Silicon Solar Cells ◽  
High Deposition Rate ◽  
Microcrystalline Silicon ◽  
Ultra Thin Film

N-type Microcrystalline Silicon Oxide (μc-SiOx:H) Window Layers with Combined Anti-reflection Effects for n-i-p Thin Film Silicon Solar Cells

2010 ◽  
Vol 1245 ◽  
Author(s):  
Vladimir Smirnov ◽  
Wanjiao Boettler ◽  
Andreas Lambertz ◽  
Oleksandr Astakhov ◽  
Reinhard Carius ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Silicon Oxide ◽  
Window Layer ◽  
Silicon Solar Cells ◽  
Internal Electric Field ◽  
Microcrystalline Silicon ◽  
Side Window ◽  
Long Wavelength ◽  
Thin Film Silicon

AbstractWe will describe the development and application of n-type microcrystalline silicon oxide (μc-SiOx:H) alloys as window layers in thin film silicon solar cells with microcrystalline silicon (μc-Si:H) absorber layers. Cells are prepared in n–i–p deposition sequence with illumination through the n-side. The layers were deposited by radio-frequency plasma enhanced chemical vapour deposition (RF-PECVD) at 185°C substrate temperature, using a mixture of phosphine (PH3), silane (SiH4), carbon dioxide (CO2) and hydrogen (H2) gases, at CO2 flows varied between 0.5 and 2 sccm and different thickness. Films were characterised by dark conductivity measurements, Photothermal Deflection Spectroscopy (PDS) and Raman spectroscopy to evaluate optical band gap E04, refractive index n and crystallinity ICRS, respectively. The results were compared with the data of alternative optimised window layers, such as n-type μc-Si:H and silicon carbide (μc-SiC:H) films. Also solar cells with conventional illumination through the p-side window were investigated for comparison. Solar cells were prepared with μc-SiOx:H n-layers of varied compositions and characterised by current-voltage (J-V) measurements under AM 1.5 illumination (and also under modified AM 1.5 illumination with red (OG590) and blue (OG7) filters) and reflectance measurements. The effects of the μc-SiOx n-layer composition and thickness on the performance of n-i-p cells were investigated and correlated with the optical, electrical and structural properties of the μc-SiOx:H n-layers. The results indicate that n-type μc-SiOx:H provides a sufficient combination of conductivity (up to 0.1 S/cm) and crystallinity (ICRS up to 30%) to function well as a doped layer for the internal electric field and the carrier transport and as a nucleation layer for the growth of the μc-Si:H i-layer. As a window layer, it also results in an enhanced spectral response, particularly in the long wavelength part of the spectrum of the solar cells, in comparison with the cells containing alternative window layers. An improved short circuit current density (Jsc) can be attributed to the wide optical gap E04 (around 2.3 eV) in the μc-SiOx:H window layers and reduced reflection in the long wavelength region of the spectrum. A minimum total reflectance of only 6% at 570nm wavelength was achieved with such μc-SiOx:H window layers. Using optimised n-type μc-SiOx:H as a window layer, an efficiency of 8.0% for 1cm2 cell area was achieved with 1 μm thick μc-Si:H absorber layer and Ag back reflector.

Microcrystalline Silicon Materials and Solar Cells with High Deposition Rate

2008 ◽  
pp. 1243-1246
Author(s):  
Xiaoyan Han ◽  
Xiaodan Zhang ◽  
Guofu Hou ◽  
Qunchao Guo ◽  
Yujie Yuan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Deposition Rate ◽  
High Deposition Rate ◽  
Microcrystalline Silicon ◽  
Silicon Materials

Window layer development for microcrystalline silicon solar cells in n-i-p configuration

2010 ◽  
pp. NA-NA ◽  
Author(s):  
Wanjiao Böttler ◽  
Vladimir Smirnov ◽  
Andreas Lambertz ◽  
Jürgen Hüpkes ◽  
Friedhelm Finger
Keyword(s):  
Solar Cells ◽  
Window Layer ◽  
Silicon Solar Cells ◽  
Microcrystalline Silicon ◽  
Layer Development

Controlling Structural Evolution by VHF Power Profiling Technique for High-efficiency Microcrystalline Silicon Solar Cells at High Deposition Rate

2009 ◽  
Vol 1153 ◽  
Author(s):  
Guofu Hou ◽  
Xiaoyan Han ◽  
Changchun Wei ◽  
Xiaodan Zhang ◽  
Guijun Li ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Deposition Rate ◽  
High Efficiency ◽  
Structural Evolution ◽  
High Rate ◽  
High Deposition Rate ◽  
Microcrystalline Silicon ◽  
Solar Cell Performance ◽  
Power Profiling

AbstractHigh rate deposition of hydrogenated microcrystalline silicon (μc-Si:H) films and solar cells were prepared by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) process in a high power and high pressure regime. The experiment results demonstrate that in high-rate deposited μc-Si:H films, the structural evolution is much more dramatic than that in low-rate deposited μc-Si:H films. A novel VHF power profiling technique, which was designed by dynamically decreasing the VHF power step by step during the deposition of μc-Si:H intrinsic layers, has been developed to control the structural evolution along the growth direction. Another advantage of this VHF power profiling technique is the reduced ion bombardments on growth surface because of decreasing the VHF power. Using this method, a significant improvement in the solar cell performance has been achieved. A high conversion efficiency of 9.36% (Voc=542mV, Jsc=25.4mA/cm2, FF=68%) was obtained for a single junction μc-Si:H p-i-n solar cell with i-layer deposited at deposition rate over 10 �/s.

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