scholarly journals Dispersion relation model of valence band in strained Si

2008 ◽  
Vol 57 (11) ◽  
pp. 7228
Author(s):  
Song Jian-Jun ◽  
Zhang He-Ming ◽  
Dai Xian-Ying ◽  
Hu Hui-Yong ◽  
Xuan Rong-Xi
Keyword(s):  
Dispersion Relation ◽  
Valence Band ◽  
Strained Si ◽  
Relation Model

scholarly journals Analytical dispersion relation model for conduction band of uniaxial strained Si

2012 ◽  
Vol 61 (9) ◽  
pp. 097103
Author(s):  
Wang Guan-Yu ◽  
Song Jian-Jun ◽  
Zhang He-Ming ◽  
Hu Hui-Yong ◽  
Ma Jian-Li ◽  
...  
Keyword(s):  
Dispersion Relation ◽  
Conduction Band ◽  
Strained Si ◽  
Relation Model

The k·p Interaction Calculations of Conduction Band and Valence Band of InN Materials

2014 ◽  
Vol 1015 ◽  
pp. 235-239
Author(s):  
Shao Guang Dong ◽  
Guo Jie Chen ◽  
Xin Chen
Keyword(s):  
Dispersion Relation ◽  
Valence Band ◽  
Conduction Band ◽  
Electron Concentration ◽  
Absorption Edge ◽  
Electron Interaction ◽  
Impurity Interaction ◽  
Consistent Picture ◽  
Valence Bands

Thek·pinteraction of the conduction band and valence band of InN materials was calculated in this paper. The nonparabolicity of the conduction band is more pronounced, because the conduction band feels stronger perturbation from the valence bands whenEgis smaller orEPis larger. The increase in absorption edge with increasing electron concentration was calculated by the dispersion relation. In the calculation, the conduction band renormalization effects due to electron interaction and electron-ionized impurity interaction are also taken into account. A good consistent picture is established in describing the conduction band of InN based on thek·pinteraction.

scholarly journals E-kRelation of Valence Band in Arbitrary Orientation/Typical Plane Uniaxially Strained

2014 ◽  
Vol 2014 ◽  
pp. 1-9
Author(s):  
Zhang Chao ◽  
Xu Da-Qing ◽  
Liu Shu-Lin ◽  
Liu Ning-Zhuang
Keyword(s):  
Valence Band ◽  
Theoretical Basis ◽  
Carrier Mobility ◽  
Energy Levels ◽  
Hole Mobility ◽  
Strained Si ◽  
Effective Masses ◽  
Splitting Energy ◽  
Analytic Models ◽  
Strained Materials

Uniaxial strain technology is an effective way to improve the performance of the small size CMOS devices, by which carrier mobility can be enhanced. TheE-krelation of the valence band in uniaxially strained Si is the theoretical basis for understanding and enhancing hole mobility. The solving procedure of the relation and its analytic expression were still lacking, and the compressive results of the valence band parameters in uniaxially strained Si were not found in the references. So, theE-krelation has been derived by taking strained Hamiltonian perturbation into account. And then the valence band parameters were obtained, including the energy levels at Γ point, the splitting energy, and hole effective masses. Our analytic models and quantized results will provide significant theoretical references for the understanding of the strained materials physics and its design.

scholarly journals Accurate Depth Inversion Method for Coastal Bathymetry: Introduction of Water Wave High-Order Dispersion Relation

2020 ◽  
Vol 8 (3) ◽  
pp. 153 ◽  
Author(s):  
Hongli Ge ◽  
Hao Liu ◽  
Libang Zhang
Keyword(s):  
Dispersion Relation ◽  
Wave Model ◽  
High Order ◽  
Wave Number ◽  
Inversion Method ◽  
Intermediate Water ◽  
Alternative Theorem ◽  
Seabed Topography ◽  
Relation Model ◽  
Order Dispersion

This paper proposes a wave model for the depth inversion of sea bathymetry based on a new high-order dispersion relation which is more suitable for intermediate water depth. The core of this model, a high-order dispersion relation is derived in this paper. First of all, new formulations of wave over generally varying seabed topography are derived using Fredholm’s alternative theorem (FAT). In the new formulations, the governing equation is coupled with wave number and varying seabed effects. A new high-order dispersion relation can be obtained from the coupling equation. It is worth mentioning that both the slope square and curvature terms ( ( ∇ h ) 2 , ∇ 2 h , ( ∇ k ) 2 , ∇ 2 k , ∇ h ⋅ ∇ k ) of water wavenumber and seabed bottom are explicitly expressed in high-order dispersion relation. Therefore, the proposed method of coastal bathymetry reversion using the higher-order dispersion relation model is more accurate, efficient, and economic.

Valence-band lineups at highly strained SiInP, GeInAs, and SiGe interfaces

1995 ◽  
Vol 93 (12) ◽  
pp. 1009-1012 ◽  
Author(s):  
San-huang Ke ◽  
Ren-zhi Wang ◽  
Mei-chun Huang
Keyword(s):  
Valence Band ◽  
Strained Si ◽  
Highly Strained

Scanning Tunneling Spectroscopy Investigation of the Strained Si1−xGex-on-Si Band Offsets

2000 ◽  
Vol 618 ◽  
Author(s):  
Xiangdong Chen ◽  
Xiang-Dong Wang ◽  
Kou-Chen Liu ◽  
Dong-Won Kim ◽  
Sanjay Banerjee
Keyword(s):  
Valence Band ◽  
Conduction Band ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Conduction Band Edge ◽  
Scanning Tunneling ◽  
Band Offset ◽  
Valence Band Offset ◽  
Strained Si ◽  
Band Offsets

ABSTRACTThe band offsets and band gap are the most important parameters that determine the electrical and optical behavior of a heterojunction. In situscanning tunneling spectroscopy (STS) was employed to measure the valence band offset of strained Si1−xGex-on-Si (100) for the first time. The valence band offsets of strained Si0.77Ge0.23and Si0.59Ge0.41on Si(100) are found to be 0.21eV and 0.36eV, respectively. The results are in good agreement with theory and with results from other experimental methods. Due to band bending and surface states, it is difficult to determine the conduction band edge at the interface of Si1−xGex/Si exactly, but the conduction band offset is found to be much smaller than the valence band offset

scholarly journals Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substrates

2012 ◽  
Vol 85 (20) ◽  
Author(s):  
James T. Teherani ◽  
Winston Chern ◽  
Dimitri A. Antoniadis ◽  
Judy L. Hoyt ◽  
Liliana Ruiz ◽  
...  
Keyword(s):  
Valence Band ◽  
Type Ii ◽  
Strained Si ◽  
Band Energy ◽  
Valence Band Energy

Direct Optical Measurement of the valence band offset of p+ Si1−x−yGexCy/p− Si (100) by Heterojunction Internal Photoemission

1998 ◽  
Vol 533 ◽  
Author(s):  
C. L. Chang ◽  
L. P. Rokhinson ◽  
J. C. Sturm
Keyword(s):  
Valence Band ◽  
Optical Measurement ◽  
Chemical Vapor ◽  
Band Alignment ◽  
Band Offset ◽  
Valence Band Offset ◽  
Strained Si ◽  
Internal Photoemission ◽  
Capacitance Voltage ◽  
Absorption Measurements

AbstractOptical absorption measurements have been performed to study the effect of carbon on the valence band offset of compressively strained p+ Si1−x−yGexCy/(100) p− Si heterojunction internal photoemission structures grown by Rapid Thermal Chemical Vapor Deposition (RTCVD) with substitutional carbon levels up to 2.5%. Results indicated that carbon decreased the valence band offset by 26 ± 1 meV/ %C. Results from optical measurement in this study agreed with previous data from capacitance-voltage measurements. Based on previous reports of carbon effect on the bandgap of compressively strained Si1−x−yGexCy, our work suggests that the effect of carbon incorporation on the band alignment of Si1−x−yGexCy/Si is to reduce the valence band offset, with a negligible effect on the conduction band alignment.

In-plane valence-band nonparabolicity and anisotropy in strained Si-Ge quantum wells

1993 ◽  
Vol 48 (20) ◽  
pp. 15112-15115 ◽  
Author(s):  
A. Zaslavsky ◽  
T. P. Smith ◽  
D. A. Grützmacher ◽  
S. Y. Lin ◽  
T. O. Sedgwick ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Strained Si ◽  
Band Nonparabolicity

Model of DOS near the Top of Valence Band in Strained Si1-xGex/(001)Si

2011 ◽  
Vol 55-57 ◽  
pp. 979-982
Author(s):  
Jian Jun Song ◽  
Heng Sheng Shan ◽  
He Ming Zhang ◽  
Hui Yong Hu ◽  
Guan Yu Wang ◽  
...  
Keyword(s):  
Effective Mass ◽  
Valence Band ◽  
Theoretical Basis ◽  
Hole Mobility ◽  
Physical Parameters ◽  
Density Of State ◽  
Strained Si ◽  
Hole Effective Mass ◽  
Effective Masses ◽  
Material Physics

Strained Si1-xGextechnology has been widely adopted to enhance hole mobility. One of the most important physical parameters is density of state near the top of valence band in strained Si1-xGexmaterials. In this paper, we first obtained the hole effective mass along arbitrarily k wavevector directions, the hole isotropic effective masses and density of state effective mass of hole in strained Si1-xGex/(001)Si with the framework of K.P theory. And then, model of density of state near the top of valence band in strained Si1-xGex/(001)Si materials was established, which can provide valuable references to the understanding on its material physics and theoretical basis on the other important physical parameters.

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