Direct Optical Measurement of the valence band offset of p+ Si1−x−yGexCy/p− Si (100) by Heterojunction Internal Photoemission

1998 ◽  
Vol 533 ◽  
Author(s):  
C. L. Chang ◽  
L. P. Rokhinson ◽  
J. C. Sturm
Keyword(s):  
Valence Band ◽  
Optical Measurement ◽  
Chemical Vapor ◽  
Band Alignment ◽  
Band Offset ◽  
Valence Band Offset ◽  
Strained Si ◽  
Internal Photoemission ◽  
Capacitance Voltage ◽  
Absorption Measurements

AbstractOptical absorption measurements have been performed to study the effect of carbon on the valence band offset of compressively strained p+ Si1−x−yGexCy/(100) p− Si heterojunction internal photoemission structures grown by Rapid Thermal Chemical Vapor Deposition (RTCVD) with substitutional carbon levels up to 2.5%. Results indicated that carbon decreased the valence band offset by 26 ± 1 meV/ %C. Results from optical measurement in this study agreed with previous data from capacitance-voltage measurements. Based on previous reports of carbon effect on the bandgap of compressively strained Si1−x−yGexCy, our work suggests that the effect of carbon incorporation on the band alignment of Si1−x−yGexCy/Si is to reduce the valence band offset, with a negligible effect on the conduction band alignment.

Optical Investigation of the Band Offset of CdxZn1−xTe /ZnTe and ZnSexTe1−x/ZnTe Superlattices

1990 ◽  
Vol 198 ◽  
Author(s):  
Y. Rajakarunanayake ◽  
M. C. Phillips ◽  
J. O. Mccaldin ◽  
D. H. Chow ◽  
D. A. Collins ◽  
...  
Keyword(s):  
Valence Band ◽  
Band Alignment ◽  
Band Offset ◽  
Type I ◽  
Optical Investigation ◽  
Type Ii ◽  
Carrier Injection ◽  
Valence Band Offset ◽  
Small Component ◽  
Strained Layer Superlattices

ABSTRACTWe have analyzed photoluminescence spectra from CdxZnl−xTe /ZnTe and ZnSexTel−x/ZnTe strained layer superlattices grown by MBE, and obtained the band offsets by fitting to theory. We find that the valence band offset of the CdTe/ZnTe system is quite small (-50± 160 meV). In CdxZnl−xTe /ZnTe superlattices, the electrons and heavy holes are confined in the CdxZn1−xTe layers (type I), while the light holes are confined in the ZnTe layers (type II). On the other hand, the photoluminescence data from the ZnSexTe1−x /ZnTe superlattices suggest that the band alignment is type II, with a large valence band offset (−907 ± 120 meV). We also investigated the band bowing in the ZnSexTel−x alloys by optical spectroscopy, and found that there is only a small component of bowing in the valence band, while most of the bowing occurs in the conduction band. Based on our results for band alignments, we evaluate the prospects for minority carrier injection in wide bandgap heterostructures based on ZnSe, ZnTe, and CdTe.

Scanning Tunneling Spectroscopy Investigation of the Strained Si1−xGex-on-Si Band Offsets

2000 ◽  
Vol 618 ◽  
Author(s):  
Xiangdong Chen ◽  
Xiang-Dong Wang ◽  
Kou-Chen Liu ◽  
Dong-Won Kim ◽  
Sanjay Banerjee
Keyword(s):  
Valence Band ◽  
Conduction Band ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Conduction Band Edge ◽  
Scanning Tunneling ◽  
Band Offset ◽  
Valence Band Offset ◽  
Strained Si ◽  
Band Offsets

ABSTRACTThe band offsets and band gap are the most important parameters that determine the electrical and optical behavior of a heterojunction. In situscanning tunneling spectroscopy (STS) was employed to measure the valence band offset of strained Si1−xGex-on-Si (100) for the first time. The valence band offsets of strained Si0.77Ge0.23and Si0.59Ge0.41on Si(100) are found to be 0.21eV and 0.36eV, respectively. The results are in good agreement with theory and with results from other experimental methods. Due to band bending and surface states, it is difficult to determine the conduction band edge at the interface of Si1−xGex/Si exactly, but the conduction band offset is found to be much smaller than the valence band offset

Valence Band Offset at Amorphous Boron Carbide / Silicon Interfaces

2013 ◽  
Vol 1576 ◽  
Author(s):  
Sean W. King ◽  
Marc French ◽  
Milt Jaehnig ◽  
Markus Kuhn
Keyword(s):  
Chemical Vapor Deposition ◽  
Valence Band ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Band Offset ◽  
Amorphous Boron ◽  
Valence Band Offset ◽  
X Ray ◽  
Heterostructure Devices

ABSTRACTIn order to understand the fundamental charge transport in a-B4-5C:H/Si heterostructure devices, we have utilized x-ray photoelectron spectroscopy to determine the valence band offset at interfaces formed by Plasma Enhanced Chemical Vapor Deposition of a-B4-5C:H on (100) Si. For such interfaces, we observed relatively small valence band offset values of ± 0.25 eV.

Scanning Tunneling Spectroscopy Investigation of the Strained Si1−xGex Band Structure

2000 ◽  
Vol 15 (6) ◽  
pp. 1257-1260 ◽  
Author(s):  
Xiangdong Chen ◽  
Xiang-Dong Wang ◽  
Kou-Chen Liu ◽  
Dong-Won Kim ◽  
Sanjay Banerjee
Keyword(s):  
Valence Band ◽  
Conduction Band ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Conduction Band Edge ◽  
Scanning Tunneling ◽  
Band Offset ◽  
Valence Band Offset ◽  
Strained Si ◽  
Band Offsets

The band offsets and band gap are the most important parameters that determine the electrical and optical behavior of a heterojunction. In situ scanning tunneling spectroscopy was employed to measure the valence-band offset of strained Si1−xGex-on-Si (100) for the first time. The valence-band offsets of the strained Si0.77Ge0.23 and Si0.59Ge0.41 on Si(100) were found to be 0.21 and 0.36 eV, respectively. The results were in good agreement with theory and with results from other experimental methods. Due to band bending and surface states, it was difficult to determine the conduction band edge at the interface of the Si1−xGex/Si exactly but we found that the conduction band offset is much smaller than the valence-band offset.

Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy

1992 ◽  
Vol 46 (3) ◽  
pp. 1886-1888 ◽  
Author(s):  
Gérald Arnaud ◽  
Philippe Boring ◽  
Bernard Gil ◽  
Jean-Charles Garcia ◽  
Jean-Pierre Landesman ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset ◽  
Photoreflectance Spectroscopy

X-ray photoelectron spectroscopy measurement of n-ZnO/p-NiO heterostructure valence-band offset

2009 ◽  
Vol 94 (2) ◽  
pp. 022108 ◽  
Author(s):  
R. Deng ◽  
B. Yao ◽  
Y. F. Li ◽  
Y. M. Zhao ◽  
B. H. Li ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray ◽  
Spectroscopy Measurement
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