scholarly journals Analytical dispersion relation model for conduction band of uniaxial strained Si

2012 ◽  
Vol 61 (9) ◽  
pp. 097103
Author(s):  
Wang Guan-Yu ◽  
Song Jian-Jun ◽  
Zhang He-Ming ◽  
Hu Hui-Yong ◽  
Ma Jian-Li ◽  
...  
Keyword(s):  
Dispersion Relation ◽  
Conduction Band ◽  
Strained Si ◽  
Relation Model

scholarly journals Dispersion relation model of valence band in strained Si

2008 ◽  
Vol 57 (11) ◽  
pp. 7228
Author(s):  
Song Jian-Jun ◽  
Zhang He-Ming ◽  
Dai Xian-Ying ◽  
Hu Hui-Yong ◽  
Xuan Rong-Xi
Keyword(s):  
Dispersion Relation ◽  
Valence Band ◽  
Strained Si ◽  
Relation Model

Zero Valley Splitting at Zero Magnetic Field for Strained Si/SiGe Quantum Wells

2007 ◽  
Vol 1017 ◽  
Author(s):  
Seungwon Lee ◽  
Paul von Allmen
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Conduction Band ◽  
Brillouin Zone ◽  
Tilt Angle ◽  
Tight Binding ◽  
Direct Consequence ◽  
Zero Magnetic Field ◽  
Strained Si ◽  
Valley Splitting

AbstractThe electronic structure for a strained silicon quantum well grown on a tilted SiGe substrate is calculated using an empirical tight-binding method. For a zero substrate tilt angle the two lowest minima of the conduction band define a non-zero valley splitting at the center of the Brillouin zone. A finite tilt angle for the substrate results in displacing the two lowest conduction band minima to finite k0 and -k0 in the Brillouin zone with equal energy. The vanishing of the valley splitting for quantum wells grown on tilted substrates is found to be a direct consequence of the periodicity of the steps at the interfaces between the quantum well and the buffer materials.

Bandstructure Near Misfit Dislocations in Si Quantum Wells

1998 ◽  
Vol 4 (S2) ◽  
pp. 794-795
Author(s):  
P.E. Batson
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Electron Mobility ◽  
Axial Strain ◽  
Strain Relaxation ◽  
Local Potential ◽  
Misfit Dislocations ◽  
High Electron ◽  
Strained Si ◽  
Growth Interface

High electron mobility structures have been built for several years now using strained silicon layers grown on SixGe(1-x) with x in the 25-40% range. In these structures, a thin layer of silicon is grown between layers of unstrained GeSi alloy. Matching of the two lattices in the plane of growth produces a bi-axial strain in the silicon, splitting the conduction band and providing light electron levels for enhanced mobility. If the silicon channel becomes too thick, strain relaxation can occur by injection of misfit dislocations at the growth interface between the silicon and GeSi alloy. The strain field of these dislocations then gives rise to a local potential variation that limits electron mobility in the strained Si channel. This study seeks to verify this mechanism by measuring the absolute conduction band shifts which track the local potential near the misfit dislocations.

The k·p Interaction Calculations of Conduction Band and Valence Band of InN Materials

2014 ◽  
Vol 1015 ◽  
pp. 235-239
Author(s):  
Shao Guang Dong ◽  
Guo Jie Chen ◽  
Xin Chen
Keyword(s):  
Dispersion Relation ◽  
Valence Band ◽  
Conduction Band ◽  
Electron Concentration ◽  
Absorption Edge ◽  
Electron Interaction ◽  
Impurity Interaction ◽  
Consistent Picture ◽  
Valence Bands

Thek·pinteraction of the conduction band and valence band of InN materials was calculated in this paper. The nonparabolicity of the conduction band is more pronounced, because the conduction band feels stronger perturbation from the valence bands whenEgis smaller orEPis larger. The increase in absorption edge with increasing electron concentration was calculated by the dispersion relation. In the calculation, the conduction band renormalization effects due to electron interaction and electron-ionized impurity interaction are also taken into account. A good consistent picture is established in describing the conduction band of InN based on thek·pinteraction.

Epitaxial Growth And Electronic Characterization Of Carboncontaining Silicon-Based Heterostructures

1998 ◽  
Vol 533 ◽  
Author(s):  
J. L. Hoyt ◽  
T. O. Mitchell ◽  
K. Rim ◽  
D. V. Singh ◽  
J. F. Gibbons
Keyword(s):  
Conduction Band ◽  
Secondary Ion Mass Spectrometry ◽  
Early Stage ◽  
Compressive Strain ◽  
Chemical Vapor ◽  
Total Carbon ◽  
Atomic Percent ◽  
Energy Splitting ◽  
Strained Si ◽  
Band Energy

AbstractEpitaxial Si1-x-yGexCy and Si1-yCy layers grown on Si are opening up new possibilities for bandstructure engineering of electronic devices. Thin Si1-yCy layers containing a few atomic percent substitutional carbon, grown on Si substrates, experience biaxial tensile strain, which produces a conduction band energy splitting that is expected to be favorable for in-plane electron transport. For other applications, C may be useful as a means of compensating the compressive strain of Ge in ternary Si1-x-yGexCy alloys. Although the understanding of the electronic properties of these materials is still at an early stage, interesting trends are emerging.A key issue for synthesis of these alloys is the low equilibrium solubility of carbon in silicon. However, a number of non-equilibrium methods have been employed to grow these materials. This work focuses on the properties of Si1-yCy and Si1-x-yGexCy grown by chemical vapor deposition. There is a strong influence of the growth conditions on the fraction of the total carbon concentration which is substitutional on the silicon lattice. Using low temperatures (e.g. 550°C) and very high silane partial pressures for Si1-yCy growth, good agreement is obtained between the carbon contents determined by x-ray diffraction and secondary ion mass spectrometry, for carbon concentrations up to about 1.8 atomic percent. Metal-oxidesemiconductor capacitors fabricated on Si1-x-yGexCy and Si/Si1-yCy epitaxial layers show wellbehaved electrical characteristics. Temperature dependent capacitance-voltage analysis is used to extract the band offsets, and indicates that the conduction band energy is lowered as carbon is added to Si. Complementary to the case of strained Si1-xGex grown on Si, for which most of the energy offset is in the valence band, the band offset appears primarily in the conduction band for Si1-yCy/Si heterojunctions.

Conduction Band Model of [110]/(001) Uniaxially Strained Si

2012 ◽  
Vol 51 (10R) ◽  
pp. 104301
Author(s):  
Song Jian-Jun ◽  
Yang Chao ◽  
Wang Guan-Yu ◽  
Zhou Chun-Yu ◽  
Wang Bing ◽  
...  
Keyword(s):  
Conduction Band ◽  
Band Model ◽  
Strained Si

scholarly journals Accurate Depth Inversion Method for Coastal Bathymetry: Introduction of Water Wave High-Order Dispersion Relation

2020 ◽  
Vol 8 (3) ◽  
pp. 153 ◽  
Author(s):  
Hongli Ge ◽  
Hao Liu ◽  
Libang Zhang
Keyword(s):  
Dispersion Relation ◽  
Wave Model ◽  
High Order ◽  
Wave Number ◽  
Inversion Method ◽  
Intermediate Water ◽  
Alternative Theorem ◽  
Seabed Topography ◽  
Relation Model ◽  
Order Dispersion

This paper proposes a wave model for the depth inversion of sea bathymetry based on a new high-order dispersion relation which is more suitable for intermediate water depth. The core of this model, a high-order dispersion relation is derived in this paper. First of all, new formulations of wave over generally varying seabed topography are derived using Fredholm’s alternative theorem (FAT). In the new formulations, the governing equation is coupled with wave number and varying seabed effects. A new high-order dispersion relation can be obtained from the coupling equation. It is worth mentioning that both the slope square and curvature terms ( ( ∇ h ) 2 , ∇ 2 h , ( ∇ k ) 2 , ∇ 2 k , ∇ h ⋅ ∇ k ) of water wavenumber and seabed bottom are explicitly expressed in high-order dispersion relation. Therefore, the proposed method of coastal bathymetry reversion using the higher-order dispersion relation model is more accurate, efficient, and economic.

Scanning Tunneling Spectroscopy Investigation of the Strained Si1−xGex-on-Si Band Offsets

2000 ◽  
Vol 618 ◽  
Author(s):  
Xiangdong Chen ◽  
Xiang-Dong Wang ◽  
Kou-Chen Liu ◽  
Dong-Won Kim ◽  
Sanjay Banerjee
Keyword(s):  
Valence Band ◽  
Conduction Band ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Conduction Band Edge ◽  
Scanning Tunneling ◽  
Band Offset ◽  
Valence Band Offset ◽  
Strained Si ◽  
Band Offsets

ABSTRACTThe band offsets and band gap are the most important parameters that determine the electrical and optical behavior of a heterojunction. In situscanning tunneling spectroscopy (STS) was employed to measure the valence band offset of strained Si1−xGex-on-Si (100) for the first time. The valence band offsets of strained Si0.77Ge0.23and Si0.59Ge0.41on Si(100) are found to be 0.21eV and 0.36eV, respectively. The results are in good agreement with theory and with results from other experimental methods. Due to band bending and surface states, it is difficult to determine the conduction band edge at the interface of Si1−xGex/Si exactly, but the conduction band offset is found to be much smaller than the valence band offset

Conduction Band Model of [110]/(001) Uniaxially Strained Si

2012 ◽  
Vol 51 ◽  
pp. 104301 ◽  
Author(s):  
Song Jian-Jun ◽  
Yang Chao ◽  
Wang Guan-Yu ◽  
Zhou Chun-Yu ◽  
Wang Bing ◽  
...  
Keyword(s):  
Conduction Band ◽  
Band Model ◽  
Strained Si
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