scholarly journals Analysis of the back-gate effect on the breakdown behavior of lateral high-voltage SOI transistors

2007 ◽  
Vol 56 (7) ◽  
pp. 3990
Author(s):  
Qiao Ming ◽  
Zhang Bo ◽  
Li Zhao-Ji ◽  
Fang Jian ◽  
Zhou Xian-Da
Keyword(s):  
High Voltage ◽  
Back Gate ◽  
Gate Effect

Analysis and Optimization of the Back-Gate Effect on Lateral High-Voltage SOI Devices

2005 ◽  
Vol 52 (7) ◽  
pp. 1649-1655 ◽  
Author(s):  
S. Schwantes ◽  
T. Florian ◽  
T. Stephan ◽  
M. Graf ◽  
V. Dudek
Keyword(s):  
High Voltage ◽  
Back Gate ◽  
Gate Effect ◽  
Soi Devices

Analysis of the Back-Gate Effect on the On-State Breakdown Voltage of Smartpower SOI Devices

2006 ◽  
Author(s):  
Stefan Schwantes ◽  
Josef Furthaler ◽  
Bernd Schauwecker ◽  
Franz Dietz ◽  
Michael Graf ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Back Gate ◽  
Gate Effect ◽  
Soi Devices ◽  
State Breakdown

Analysis of the Back-Gate Effect on the on-State Breakdown Voltage of Smartpower SOI Devices

2006 ◽  
Vol 6 (3) ◽  
pp. 377-385 ◽  
Author(s):  
S. Schwantes ◽  
J. Furthaler ◽  
B. Schauwecker ◽  
F. Dietz ◽  
M. Graf ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Back Gate ◽  
Gate Effect ◽  
Soi Devices ◽  
State Breakdown

Floating effective back-gate effect on the small-signal output conductance of SOI MOSFETs

2003 ◽  
Vol 24 (6) ◽  
pp. 414-416 ◽  
Author(s):  
V. Kilchytska ◽  
D. Levacq ◽  
D. Lederer ◽  
J.-P. Raskin ◽  
D. Flandre
Keyword(s):  
Small Signal ◽  
Back Gate ◽  
Gate Effect ◽  
Signal Output ◽  
Output Conductance

Back-Gate Effect on $R_{\mathrm {{\mathrm{{\scriptscriptstyle ON}},sp}}}$ and BV for Thin Layer SOI Field p-Channel LDMOS

2015 ◽  
Vol 62 (4) ◽  
pp. 1098-1104 ◽  
Author(s):  
Xin Zhou ◽  
Ming Qiao ◽  
Yitao He ◽  
Zhuo Wang ◽  
Zhaoji Li ◽  
...  
Keyword(s):  
Thin Layer ◽  
Back Gate ◽  
Gate Effect

scholarly journals A novel supply voltage compensation circuit for the inverter switching point

2017 ◽  
Vol 30 (4) ◽  
pp. 627-638 ◽  
Author(s):  
Alexandru-Mihai Antonescu ◽  
Lidia Dobrescu
Keyword(s):  
Supply Voltage ◽  
Switching Point ◽  
Compensation Circuit ◽  
Back Gate ◽  
Voltage Range ◽  
Voltage Variation ◽  
Voltage Change ◽  
Gate Effect ◽  
Voltage Compensation

The present work proposes an innovative circuit that is able to compensate the inverter switching point voltage variation due to supply voltage change. The circuit is designed to work for a 1.6V to 2V supply voltage range. The operation principle includes the back gate effect and an original transistor switching.

Back-gate effect on p-channel GaN MOSFETs on Polarization-Junction Substrate

2017 ◽  
Author(s):  
T. Hoshii ◽  
R. Takayama ◽  
A. Nakajima ◽  
S. Nishizawa ◽  
H. Ohashi ◽  
...  
Keyword(s):  
Back Gate ◽  
Gate Effect

Towards High-Voltage MOSFETs in Ultrathin FDSOI

2016 ◽  
Vol 25 (01n02) ◽  
pp. 1640005 ◽  
Author(s):  
Antoine Litty ◽  
Sylvie Ortolland ◽  
Dominique Golanski ◽  
Christian Dutto ◽  
Alexandres Dartigues ◽  
...  
Keyword(s):  
High Voltage ◽  
Low Voltage ◽  
Ground Plane ◽  
Silicon Film ◽  
Silicon On Insulator ◽  
Drift Region ◽  
Back Gate ◽  
Fully Depleted ◽  
Buried Oxide ◽  
Core Technology

High-Voltage MOSFETs are essential devices for complementing and extending the domains of application of any core technology including low-power, low-voltage CMOS. In this paper, we propose and describe advanced Extended-Drain MOSFETs, designed, processed and characterized in ultrathin body and buried oxide Fully Depleted Silicon on Insulator technology (UTBB-FDSOI). These transistors have been implemented in two technology nodes (28 nm and 14 nm) with different silicon film and buried oxide thicknesses (TSi < 10nm and TBOX ≤ 25nm). Our innovative concept of Dual Ground Plane (DGP) provides RESURF-like effect (reduced surface field) and offers additional flexibility for HVMOS integration directly in the ultrathin film of the FDSOI wafer. In this configuration, the primary back-gate controls the threshold voltage (VTH) to ensure performance and low leakage current. The second back-gate, located underneath the drift region, acts as a field plate enabling the improvement of the ON resistance (RON) and breakdown voltage (BV). The trade-off RON.S versus BV is investigated as a function of doping level, length and thickness of the drift region. We report promising results and discuss further developments for successful integration of high-voltage MOSFETs in ultrathin CMOS FDSOI technology.

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